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FDC604P
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onsemi FDC604P

Manufacturer No:
FDC604P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 5.5A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDC604P is a P-Channel 1.8V specified PowerTrench® MOSFET produced by onsemi. This MOSFET is designed using a low voltage PowerTrench process, which optimizes it for battery power management applications. It is known for its high performance and efficiency in managing power in various electronic devices.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)-20V
VGS (Gate-Source Voltage)±8V
ID (Continuous Drain Current)-5.5A
PD (Power Dissipation)1.6W
RDS(on) (On-Resistance)Typically 35mΩ at VGS = -4.5V, ID = -5A
PackageSuperSOT-6

Key Features

  • Low on-resistance (RDS(on)) of typically 35mΩ at VGS = -4.5V, ID = -5A
  • High current capability of up to -5.5A
  • Low voltage operation with a VGS threshold of 1.8V
  • Compact SuperSOT-6 package for space-efficient designs
  • Optimized for battery power management applications

Applications

The FDC604P is particularly suited for battery power management in various electronic devices. Some common applications include:

  • Battery-powered devices such as smartphones, tablets, and laptops
  • Power management in portable electronics
  • DC-DC converters and switching power supplies
  • Low voltage power switching and load management

Q & A

  1. What is the drain-source voltage rating of the FDC604P?
    The drain-source voltage (VDS) rating of the FDC604P is -20V.
  2. What is the continuous drain current of the FDC604P?
    The continuous drain current (ID) of the FDC604P is -5.5A.
  3. What is the typical on-resistance of the FDC604P?
    The typical on-resistance (RDS(on)) of the FDC604P is 35mΩ at VGS = -4.5V, ID = -5A.
  4. What package type is the FDC604P available in?
    The FDC604P is available in the SuperSOT-6 package.
  5. What are the primary applications of the FDC604P?
    The FDC604P is optimized for battery power management in devices such as smartphones, tablets, and laptops, as well as in DC-DC converters and switching power supplies.
  6. What is the power dissipation rating of the FDC604P?
    The power dissipation (PD) rating of the FDC604P is 1.6W.
  7. What is the gate-source voltage threshold of the FDC604P?
    The gate-source voltage threshold (VGS(th)) of the FDC604P is specified at 1.8V.
  8. Is the FDC604P suitable for high current applications?
    Yes, the FDC604P is capable of handling high currents up to -5.5A.
  9. What process is used to manufacture the FDC604P?
    The FDC604P is manufactured using the low voltage PowerTrench process.
  10. Where can I find detailed specifications for the FDC604P?
    Detailed specifications for the FDC604P can be found on the onsemi website, as well as on distributor sites like Digi-Key and TME.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1926 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number FDC604P FDC606P FDC654P FDC634P FDC602P
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
FET Type P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 12 V 30 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Ta) 6A (Ta) 3.6A (Ta) 3.5A (Ta) 5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V 4.5V, 10V 2.5V, 4.5V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 33mOhm @ 5.5A, 4.5V 26mOhm @ 6A, 4.5V 75mOhm @ 3.6A, 10V 80mOhm @ 3.5A, 4.5V 35mOhm @ 5.5A, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA 1.5V @ 250µA 3V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V 25 nC @ 4.5 V 9 nC @ 10 V 10 nC @ 4.5 V 20 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±20V ±8V ±12V
Input Capacitance (Ciss) (Max) @ Vds 1926 pF @ 10 V 1699 pF @ 6 V 298 pF @ 15 V 779 pF @ 10 V 1456 pF @ 10 V
FET Feature - - - - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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