FDB3632_SB82115
  • Share:

onsemi FDB3632_SB82115

Manufacturer No:
FDB3632_SB82115
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 100V 12A/80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB3632_SB82115 is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is part of the POWERTRENCH™ family and is known for its low on-resistance and high current handling capabilities. Although this product is no longer in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C12A
Pulsed Drain Current (ID)80A
On-Resistance (RDS(ON)) at VGS = 10 V, ID = 80 A7.5 mΩ
Total Gate Charge (Qg) at VGS = 10 V84 nCnC
Thermal Resistance, Junction to Case (RθJC)0.48 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)62 °C/W°C/W
Operating and Storage Temperature Range-55 to +175 °C°C

Key Features

  • Low on-resistance (RDS(ON)) of 7.5 mΩ at VGS = 10 V, ID = 80 A
  • Low Miller charge and low Qrr body diode
  • UIS capability (single pulse and repetitive pulse)
  • Pb-free and RoHS compliant
  • High current handling and low thermal resistance

Applications

  • Synchronous rectification
  • Battery protection circuits
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Micro solar inverters

Q & A

  1. What is the maximum drain to source voltage of the FDB3632_SB82115?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the typical on-resistance of the FDB3632_SB82115?
    The typical on-resistance (RDS(ON)) is 7.5 mΩ at VGS = 10 V, ID = 80 A.
  3. What are the thermal resistance values for the FDB3632_SB82115?
    The thermal resistance from junction to case (RθJC) is 0.48 °C/W, and from junction to ambient (RθJA) is 62 °C/W.
  4. Is the FDB3632_SB82115 Pb-free and RoHS compliant?
    Yes, the FDB3632_SB82115 is Pb-free and RoHS compliant.
  5. What are some common applications of the FDB3632_SB82115?
    Common applications include synchronous rectification, battery protection circuits, motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
  6. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current (ID) at TC = 25°C is 12 A.
  7. What is the total gate charge at VGS = 10 V?
    The total gate charge (Qg) at VGS = 10 V is 84 nC.
  8. What is the operating and storage temperature range for the FDB3632_SB82115?
    The operating and storage temperature range is -55 to +175 °C.
  9. Is the FDB3632_SB82115 still in production?
    No, the FDB3632_SB82115 is no longer in production.
  10. Where can I find detailed specifications and datasheets for the FDB3632_SB82115?
    Detailed specifications and datasheets can be found on the onsemi official website and other authorized distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
38

Please send RFQ , we will respond immediately.

Same Series
RD15S10HE2X/AA
RD15S10HE2X/AA
CONN D-SUB RCPT 15POS CRIMP
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
CBC13W3S10HE30/AA
CBC13W3S10HE30/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HE2S/AA
CBC13W3S10HE2S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S00X/AA
DD44S32S00X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60TX/AA
DD44S32S60TX/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

2N7002HSX
2N7002HSX
Nexperia USA Inc.
2N7002HS/SOT363/SC-88
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDMS86520L
FDMS86520L
onsemi
MOSFET N CH 60V 13.5A 8PQFN
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MMSZ11T1G
MMSZ11T1G
onsemi
DIODE ZENER 11V 500MW SOD123
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
2N6284G
2N6284G
onsemi
TRANS NPN DARL 100V 20A TO204
MMBT3904LT1G
MMBT3904LT1G
onsemi
TRANS NPN 40V 0.2A SOT23-3
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
MC33072DR2G
MC33072DR2G
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK
MC7808BTG
MC7808BTG
onsemi
IC REG LINEAR 8V 1A TO220AB