FDB3632_SB82115
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onsemi FDB3632_SB82115

Manufacturer No:
FDB3632_SB82115
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 100V 12A/80A D2PAK
Delivery:
Payment:
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Product Introduction

Overview

The FDB3632_SB82115 is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is part of the POWERTRENCH™ family and is known for its low on-resistance and high current handling capabilities. Although this product is no longer in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C12A
Pulsed Drain Current (ID)80A
On-Resistance (RDS(ON)) at VGS = 10 V, ID = 80 A7.5 mΩ
Total Gate Charge (Qg) at VGS = 10 V84 nCnC
Thermal Resistance, Junction to Case (RθJC)0.48 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)62 °C/W°C/W
Operating and Storage Temperature Range-55 to +175 °C°C

Key Features

  • Low on-resistance (RDS(ON)) of 7.5 mΩ at VGS = 10 V, ID = 80 A
  • Low Miller charge and low Qrr body diode
  • UIS capability (single pulse and repetitive pulse)
  • Pb-free and RoHS compliant
  • High current handling and low thermal resistance

Applications

  • Synchronous rectification
  • Battery protection circuits
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Micro solar inverters

Q & A

  1. What is the maximum drain to source voltage of the FDB3632_SB82115?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the typical on-resistance of the FDB3632_SB82115?
    The typical on-resistance (RDS(ON)) is 7.5 mΩ at VGS = 10 V, ID = 80 A.
  3. What are the thermal resistance values for the FDB3632_SB82115?
    The thermal resistance from junction to case (RθJC) is 0.48 °C/W, and from junction to ambient (RθJA) is 62 °C/W.
  4. Is the FDB3632_SB82115 Pb-free and RoHS compliant?
    Yes, the FDB3632_SB82115 is Pb-free and RoHS compliant.
  5. What are some common applications of the FDB3632_SB82115?
    Common applications include synchronous rectification, battery protection circuits, motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
  6. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current (ID) at TC = 25°C is 12 A.
  7. What is the total gate charge at VGS = 10 V?
    The total gate charge (Qg) at VGS = 10 V is 84 nC.
  8. What is the operating and storage temperature range for the FDB3632_SB82115?
    The operating and storage temperature range is -55 to +175 °C.
  9. Is the FDB3632_SB82115 still in production?
    No, the FDB3632_SB82115 is no longer in production.
  10. Where can I find detailed specifications and datasheets for the FDB3632_SB82115?
    Detailed specifications and datasheets can be found on the onsemi official website and other authorized distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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