FDB3632_SB82115
  • Share:

onsemi FDB3632_SB82115

Manufacturer No:
FDB3632_SB82115
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 100V 12A/80A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB3632_SB82115 is a power MOSFET produced by onsemi, designed for high-performance applications. This N-Channel MOSFET is part of the POWERTRENCH™ family and is known for its low on-resistance and high current handling capabilities. Although this product is no longer in production, it remains relevant for existing designs and maintenance of older systems.

Key Specifications

ParameterValueUnit
Drain to Source Voltage (VDSS)100V
Gate to Source Voltage (VGS)±20V
Continuous Drain Current (ID) at TC = 25°C12A
Pulsed Drain Current (ID)80A
On-Resistance (RDS(ON)) at VGS = 10 V, ID = 80 A7.5 mΩ
Total Gate Charge (Qg) at VGS = 10 V84 nCnC
Thermal Resistance, Junction to Case (RθJC)0.48 °C/W°C/W
Thermal Resistance, Junction to Ambient (RθJA)62 °C/W°C/W
Operating and Storage Temperature Range-55 to +175 °C°C

Key Features

  • Low on-resistance (RDS(ON)) of 7.5 mΩ at VGS = 10 V, ID = 80 A
  • Low Miller charge and low Qrr body diode
  • UIS capability (single pulse and repetitive pulse)
  • Pb-free and RoHS compliant
  • High current handling and low thermal resistance

Applications

  • Synchronous rectification
  • Battery protection circuits
  • Motor drives
  • Uninterruptible power supplies (UPS)
  • Micro solar inverters

Q & A

  1. What is the maximum drain to source voltage of the FDB3632_SB82115?
    The maximum drain to source voltage (VDSS) is 100 V.
  2. What is the typical on-resistance of the FDB3632_SB82115?
    The typical on-resistance (RDS(ON)) is 7.5 mΩ at VGS = 10 V, ID = 80 A.
  3. What are the thermal resistance values for the FDB3632_SB82115?
    The thermal resistance from junction to case (RθJC) is 0.48 °C/W, and from junction to ambient (RθJA) is 62 °C/W.
  4. Is the FDB3632_SB82115 Pb-free and RoHS compliant?
    Yes, the FDB3632_SB82115 is Pb-free and RoHS compliant.
  5. What are some common applications of the FDB3632_SB82115?
    Common applications include synchronous rectification, battery protection circuits, motor drives, uninterruptible power supplies (UPS), and micro solar inverters.
  6. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current (ID) at TC = 25°C is 12 A.
  7. What is the total gate charge at VGS = 10 V?
    The total gate charge (Qg) at VGS = 10 V is 84 nC.
  8. What is the operating and storage temperature range for the FDB3632_SB82115?
    The operating and storage temperature range is -55 to +175 °C.
  9. Is the FDB3632_SB82115 still in production?
    No, the FDB3632_SB82115 is no longer in production.
  10. Where can I find detailed specifications and datasheets for the FDB3632_SB82115?
    Detailed specifications and datasheets can be found on the onsemi official website and other authorized distributors like Digi-Key.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
38

Please send RFQ , we will respond immediately.

Same Series
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10HE20/AA
CBC13W3S10HE20/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE3X/AA
CBC13W3S10HE3X/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0T2X
DD26S2S0T2X
CONN D-SUB HD RCPT 26P SLDR CUP
CBC9W4S10HV5S/AA
CBC9W4S10HV5S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200V30/AA
DD26S200V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD15S20JVLS
DD15S20JVLS
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S200V50
DD26S200V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T0
DD44S3200T0
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20J0X
DD26S20J0X
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSS84KW-TP
BSS84KW-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT323
FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
IRLML0040TRPBF
IRLML0040TRPBF
Infineon Technologies
MOSFET N-CH 40V 3.6A SOT23
BUK7613-60E,118
BUK7613-60E,118
Nexperia USA Inc.
MOSFET N-CH 60V 58A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
2N7002AQ-13
2N7002AQ-13
Diodes Incorporated
MOSFET N-CH 60V 180MA SOT23
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
FDC658APG
FDC658APG
onsemi
MOSFET P-CH 30V 4A SSOT6

Related Product By Brand

1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
MM5Z6V2T1G
MM5Z6V2T1G
onsemi
DIODE ZENER 6.2V 500MW SOD523
MMBT6429LT1G
MMBT6429LT1G
onsemi
TRANS NPN 45V 0.2A SOT23-3
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
NSS60600MZ4T3G
NSS60600MZ4T3G
onsemi
TRANS PNP 60V 6A SOT223
NTUD3127CT5G
NTUD3127CT5G
onsemi
MOSFET N/P-CH 20V SOT-963
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP302045MNTWG
NCP302045MNTWG
onsemi
IC PWR DRIVER P-CHAN 2:1 31PQFN
UC3843AD1G
UC3843AD1G
onsemi
UC3843 CURRENT-MODE PWM CONTROLL
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP