FDB070AN06A0-F085
  • Share:

onsemi FDB070AN06A0-F085

Manufacturer No:
FDB070AN06A0-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 15A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB070AN06A0 is an N-Channel PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed for high-performance applications requiring low on-resistance and high current handling. Although the component is currently obsolete and not in production, it remains relevant for reference and legacy systems. The FDB070AN06A0 features a drain-to-source voltage (VDSS) of 60 V, a continuous drain current (ID) of up to 80 A, and a typical on-resistance (RDS(ON)) of 6.1 mΩ at VGS = 10 V and ID = 80 A.

Key Specifications

Parameter Unit Min Max
Drain to Source Voltage (VDSS) V - - 60
Gate to Source Voltage (VGS) V - - ±20
Continuous Drain Current (ID) at TC < 97°C, VGS = 10V A - - 80
Continuous Drain Current (ID) at TA = 25°C, VGS = 10V, RθJA = 43°C/W A - - 15
Power Dissipation (PD) W - - 175
Thermal Resistance Junction to Ambient (RθJA) °C/W - - 43
On-Resistance (RDS(ON)) at VGS = 10V, ID = 80A - 6.1 7
Total Gate Charge (Qg(TOT)) at VGS = 10V nC - 51 66
Gate to Source Threshold Voltage (VGS(TH)) V 2 - 4

Key Features

  • Low on-resistance (RDS(ON)) of 6.1 mΩ at VGS = 10 V and ID = 80 A.
  • Low Miller charge and Qrr for reduced switching losses.
  • UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.
  • High current handling capability with a continuous drain current of up to 80 A.
  • Operating and storage temperature range of -55°C to 175°C.

Applications

  • Motor drives.
  • Uninterruptible power supplies (UPS).
  • Battery protection circuits.
  • Synchronous rectification for ATX, server, and telecom power supplies.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDB070AN06A0?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the typical on-resistance (RDS(ON)) of the FDB070AN06A0?

    The typical on-resistance (RDS(ON)) is 6.1 mΩ at VGS = 10 V and ID = 80 A.

  3. What are the operating and storage temperature ranges for the FDB070AN06A0?

    The operating and storage temperature ranges are -55°C to 175°C.

  4. What is the maximum continuous drain current (ID) at TC < 97°C and VGS = 10V?

    The maximum continuous drain current (ID) is 80 A.

  5. What are some typical applications of the FDB070AN06A0?

    Typical applications include motor drives, uninterruptible power supplies (UPS), battery protection circuits, and synchronous rectification for ATX, server, and telecom power supplies.

  6. What is the thermal resistance junction to ambient (RθJA) of the FDB070AN06A0?

    The thermal resistance junction to ambient (RθJA) is 43°C/W.

  7. Does the FDB070AN06A0 have UIS capability?

    Yes, the FDB070AN06A0 has UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.

  8. What is the total gate charge (Qg(TOT)) at VGS = 10V?

    The total gate charge (Qg(TOT)) is typically 51 nC at VGS = 10V.

  9. Is the FDB070AN06A0 still in production?

    No, the FDB070AN06A0 is obsolete and not in production.

  10. What package type is the FDB070AN06A0 available in?

    The FDB070AN06A0 is available in the D2-PAK package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$2.34
108

Please send RFQ , we will respond immediately.

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
NTMFS5C646NLT1G
NTMFS5C646NLT1G
onsemi
MOSFET N-CH 60V 19A 5DFN
IPW65R080CFDAFKSA1
IPW65R080CFDAFKSA1
Infineon Technologies
MOSFET N-CH 650V 43.3A TO247-3
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
BSS84TC
BSS84TC
Diodes Incorporated
MOSFET P-CH 50V 130MA SOT23-3
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

2N3773G
2N3773G
onsemi
TRANS NPN 140V 16A TO204
BSS138LT7G
BSS138LT7G
onsemi
MOSFET N-CH 50V 200MA SOT23-3
NCD9830DBR2G
NCD9830DBR2G
onsemi
IC ADC 8BIT SAR 16TSSOP
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
MC74VHC259DR2G
MC74VHC259DR2G
onsemi
IC LATCH ADDRS 8BIT CMOS 16SOIC
NCP1377DR2G
NCP1377DR2G
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
STK672-432AN-E
STK672-432AN-E
onsemi
IC MOTOR DRIVER UNIPOLAR 19SIP
MC34161DMR2G
MC34161DMR2G
onsemi
IC SUPERVISOR 2 CHANNEL MICRO8
REF3033TB-GT3
REF3033TB-GT3
onsemi
IC VREF SERIES 0.2% SOT23-3
MC79L15ABPG
MC79L15ABPG
onsemi
IC REG LINEAR -15V 100MA TO92-3
NCV8170AMX280TCG
NCV8170AMX280TCG
onsemi
IC REG LINEAR 2.8V 150MA 4XDFN