FDB070AN06A0-F085
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onsemi FDB070AN06A0-F085

Manufacturer No:
FDB070AN06A0-F085
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 15A TO263AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB070AN06A0 is an N-Channel PowerTrench® MOSFET produced by onsemi (formerly Fairchild Semiconductor). This device is designed for high-performance applications requiring low on-resistance and high current handling. Although the component is currently obsolete and not in production, it remains relevant for reference and legacy systems. The FDB070AN06A0 features a drain-to-source voltage (VDSS) of 60 V, a continuous drain current (ID) of up to 80 A, and a typical on-resistance (RDS(ON)) of 6.1 mΩ at VGS = 10 V and ID = 80 A.

Key Specifications

Parameter Unit Min Max
Drain to Source Voltage (VDSS) V - - 60
Gate to Source Voltage (VGS) V - - ±20
Continuous Drain Current (ID) at TC < 97°C, VGS = 10V A - - 80
Continuous Drain Current (ID) at TA = 25°C, VGS = 10V, RθJA = 43°C/W A - - 15
Power Dissipation (PD) W - - 175
Thermal Resistance Junction to Ambient (RθJA) °C/W - - 43
On-Resistance (RDS(ON)) at VGS = 10V, ID = 80A - 6.1 7
Total Gate Charge (Qg(TOT)) at VGS = 10V nC - 51 66
Gate to Source Threshold Voltage (VGS(TH)) V 2 - 4

Key Features

  • Low on-resistance (RDS(ON)) of 6.1 mΩ at VGS = 10 V and ID = 80 A.
  • Low Miller charge and Qrr for reduced switching losses.
  • UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.
  • High current handling capability with a continuous drain current of up to 80 A.
  • Operating and storage temperature range of -55°C to 175°C.

Applications

  • Motor drives.
  • Uninterruptible power supplies (UPS).
  • Battery protection circuits.
  • Synchronous rectification for ATX, server, and telecom power supplies.

Q & A

  1. What is the maximum drain-to-source voltage (VDSS) of the FDB070AN06A0?

    The maximum drain-to-source voltage (VDSS) is 60 V.

  2. What is the typical on-resistance (RDS(ON)) of the FDB070AN06A0?

    The typical on-resistance (RDS(ON)) is 6.1 mΩ at VGS = 10 V and ID = 80 A.

  3. What are the operating and storage temperature ranges for the FDB070AN06A0?

    The operating and storage temperature ranges are -55°C to 175°C.

  4. What is the maximum continuous drain current (ID) at TC < 97°C and VGS = 10V?

    The maximum continuous drain current (ID) is 80 A.

  5. What are some typical applications of the FDB070AN06A0?

    Typical applications include motor drives, uninterruptible power supplies (UPS), battery protection circuits, and synchronous rectification for ATX, server, and telecom power supplies.

  6. What is the thermal resistance junction to ambient (RθJA) of the FDB070AN06A0?

    The thermal resistance junction to ambient (RθJA) is 43°C/W.

  7. Does the FDB070AN06A0 have UIS capability?

    Yes, the FDB070AN06A0 has UIS (Unclamped Inductive Switching) capability for both single pulse and repetitive pulse.

  8. What is the total gate charge (Qg(TOT)) at VGS = 10V?

    The total gate charge (Qg(TOT)) is typically 51 nC at VGS = 10V.

  9. Is the FDB070AN06A0 still in production?

    No, the FDB070AN06A0 is obsolete and not in production.

  10. What package type is the FDB070AN06A0 available in?

    The FDB070AN06A0 is available in the D2-PAK package.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:66 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):175W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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