FCH099N60E
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onsemi FCH099N60E

Manufacturer No:
FCH099N60E
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 600V 37A TO247-3
Delivery:
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Product Introduction

Overview

The FCH099N60E is a high-performance N-Channel MOSFET from ON Semiconductor, part of their SuperFET II family. This device is designed for high-voltage applications, utilizing super-junction (SJ) technology to enhance efficiency and reliability. The FCH099N60E is known for its easy-drive characteristics, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600V
Continuous Drain Current (Id)24A
Pulse Drain Current (Idm)111A
Power Dissipation (Pd)357W
Package TypeTO247

Key Features

  • High-voltage super-junction (SJ) technology for improved efficiency and reduced losses.
  • Easy-drive characteristics for simpler gate drive requirements.
  • High continuous and pulse drain current capabilities.
  • High power dissipation rating.
  • TO247 package for robust and reliable mounting.

Applications

The FCH099N60E is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Renewable energy systems such as solar and wind power.
  • Automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the FCH099N60E MOSFET?
    The voltage rating of the FCH099N60E MOSFET is 600V.
  2. What is the continuous drain current of the FCH099N60E?
    The continuous drain current of the FCH099N60E is 24A.
  3. What is the pulse drain current of the FCH099N60E?
    The pulse drain current of the FCH099N60E is 111A.
  4. What is the power dissipation rating of the FCH099N60E?
    The power dissipation rating of the FCH099N60E is 357W.
  5. What package type does the FCH099N60E come in?
    The FCH099N60E comes in a TO247 package.
  6. What technology does the FCH099N60E use?
    The FCH099N60E uses high-voltage super-junction (SJ) technology.
  7. What are the key features of the FCH099N60E?
    The key features include high-voltage super-junction technology, easy-drive characteristics, high continuous and pulse drain current, and high power dissipation rating.
  8. What are some typical applications of the FCH099N60E?
    Typical applications include power supplies, motor control systems, industrial power management, renewable energy systems, and automotive systems.
  9. Where can I find more detailed specifications for the FCH099N60E?
    You can find detailed specifications in the datasheet available on ON Semiconductor's official website or through distributors like Mouser and TME.
  10. Is the FCH099N60E suitable for high-reliability applications?
    Yes, the FCH099N60E is designed for high-reliability applications due to its robust construction and advanced super-junction technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3465 pF @ 380 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FCH099N60E FCP099N60E
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 18.5A, 10V 99mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3465 pF @ 380 V 3465 pF @ 380 V
FET Feature - -
Power Dissipation (Max) 357W (Tc) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-220-3
Package / Case TO-247-3 TO-220-3

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