FCH099N60E
  • Share:

onsemi FCH099N60E

Manufacturer No:
FCH099N60E
Manufacturer:
onsemi
Package:
Bulk
Description:
MOSFET N-CH 600V 37A TO247-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FCH099N60E is a high-performance N-Channel MOSFET from ON Semiconductor, part of their SuperFET II family. This device is designed for high-voltage applications, utilizing super-junction (SJ) technology to enhance efficiency and reliability. The FCH099N60E is known for its easy-drive characteristics, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)600V
Continuous Drain Current (Id)24A
Pulse Drain Current (Idm)111A
Power Dissipation (Pd)357W
Package TypeTO247

Key Features

  • High-voltage super-junction (SJ) technology for improved efficiency and reduced losses.
  • Easy-drive characteristics for simpler gate drive requirements.
  • High continuous and pulse drain current capabilities.
  • High power dissipation rating.
  • TO247 package for robust and reliable mounting.

Applications

The FCH099N60E is suitable for various high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Industrial power management systems.
  • Renewable energy systems such as solar and wind power.
  • Automotive systems requiring high reliability and efficiency.

Q & A

  1. What is the voltage rating of the FCH099N60E MOSFET?
    The voltage rating of the FCH099N60E MOSFET is 600V.
  2. What is the continuous drain current of the FCH099N60E?
    The continuous drain current of the FCH099N60E is 24A.
  3. What is the pulse drain current of the FCH099N60E?
    The pulse drain current of the FCH099N60E is 111A.
  4. What is the power dissipation rating of the FCH099N60E?
    The power dissipation rating of the FCH099N60E is 357W.
  5. What package type does the FCH099N60E come in?
    The FCH099N60E comes in a TO247 package.
  6. What technology does the FCH099N60E use?
    The FCH099N60E uses high-voltage super-junction (SJ) technology.
  7. What are the key features of the FCH099N60E?
    The key features include high-voltage super-junction technology, easy-drive characteristics, high continuous and pulse drain current, and high power dissipation rating.
  8. What are some typical applications of the FCH099N60E?
    Typical applications include power supplies, motor control systems, industrial power management, renewable energy systems, and automotive systems.
  9. Where can I find more detailed specifications for the FCH099N60E?
    You can find detailed specifications in the datasheet available on ON Semiconductor's official website or through distributors like Mouser and TME.
  10. Is the FCH099N60E suitable for high-reliability applications?
    Yes, the FCH099N60E is designed for high-reliability applications due to its robust construction and advanced super-junction technology.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:37A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:114 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3465 pF @ 380 V
FET Feature:- 
Power Dissipation (Max):357W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
0 Remaining View Similar

In Stock

$3.15
62

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCH099N60E FCP099N60E
Manufacturer onsemi Fairchild Semiconductor
Product Status Last Time Buy Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 37A (Tc) 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 99mOhm @ 18.5A, 10V 99mOhm @ 18.5A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 114 nC @ 10 V 114 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 3465 pF @ 380 V 3465 pF @ 380 V
FET Feature - -
Power Dissipation (Max) 357W (Tc) 357W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 TO-220-3
Package / Case TO-247-3 TO-220-3

Related Product By Categories

IRF4905PBF
IRF4905PBF
Infineon Technologies
MOSFET P-CH 55V 74A TO220AB
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
NTHD3101FT1G
NTHD3101FT1G
onsemi
MOSFET P-CH 20V 3.2A CHIPFET
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
STW48N60M6-4
STW48N60M6-4
STMicroelectronics
MOSFET N-CH 600V 39A TO247-4
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
STS12NH3LL
STS12NH3LL
STMicroelectronics
MOSFET N-CH 30V 12A 8SO

Related Product By Brand

MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SZBZX84C12LT1G
SZBZX84C12LT1G
onsemi
DIODE ZENER 12V 250MW SOT23-3
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
NB3N502DR2G
NB3N502DR2G
onsemi
IC MULTIPLIER CLOCK PLL 8-SOIC
CAT4008Y-T2
CAT4008Y-T2
onsemi
IC LED DRVR LINEAR 80MA 16TSSOP
NCP432BISNT1G
NCP432BISNT1G
onsemi
IC VREF SHUNT ADJ 0.5% SOT23-3
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
NCV4276CDS50R4G
NCV4276CDS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK-5
FODM8801BR2
FODM8801BR2
onsemi
OPTOISO 3.75KV TRANS 4-MINI-FLAT