Overview
The FCD5N60-F085 is an N-Channel SuperFET® MOSFET produced by ON Semiconductor. This high-voltage MOSFET is part of ON Semiconductor's advanced generation of SuperFET devices, designed to offer outstanding low on-resistance and lower gate charge performance. The FCD5N60-F085 is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates and higher avalanche energy, making it suitable for various high-performance applications, particularly in the automotive sector.
Key Specifications
| Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|
| Drain-to-Source Voltage (VDSS) | ID = 250μA, VGS = 0V | - | - | 600 | V |
| Gate-to-Source Voltage (VGS) | - | - | - | ±30 | V |
| Continuous Drain Current (ID) | VGS = 10V, TC = 25°C | - | - | 4.6 | A |
| Pulsed Drain Current | TC = 25°C (See Figure 4) | - | - | - | A |
| Single Pulse Avalanche Energy (EAS) | L = 10mH, IAS = 2.4A, VDD = 100V | - | - | 29 | mJ |
| Power Dissipation (PD) | - | - | - | 54 | W |
| Thermal Resistance, Junction to Case (RθJC) | - | - | - | 2.3 | °C/W |
| Thermal Resistance, Junction to Ambient (RθJA) | - | - | - | 83 | °C/W |
| Gate to Source Threshold Voltage (VGS(th)) | VGS = VDS, ID = 250μA | 3.0 | - | 5.0 | V |
| Drain to Source On Resistance (RDS(on)) | ID = 4.6A, VGS = 10V, TJ = 25°C | - | 0.86 | 1.1 | Ω |
| Total Gate Charge (Qg(ToT)) | VGS = 0 to 10V, VDD = 480V, ID = 4.6A | - | 16 | 21 | nC |
Key Features
- High Voltage Rating: 600V drain-to-source voltage (VDSS).
- Low On-Resistance: Typical RDS(on) of 0.86Ω at VGS = 10V and TJ = 25°C.
- Ultra Low Gate Charge: Total gate charge (Qg(ToT)) of 16 nC.
- UIS Capability: Single pulse avalanche energy (EAS) of 29 mJ.
- RoHS Compliant: Meets RoHS (Restriction of Hazardous Substances) standards.
- AEC Q101 Qualified: Qualified to the Automotive Electronics Council (AEC) Q101 standard.
- High Performance Switching: Superior switching performance with low turn-on and turn-off times.
- High Avalanche Energy: Withstands higher avalanche energy and extreme dv/dt rates.
Applications
- Automotive On Board Charger: Suitable for high-power charging systems in electric and hybrid vehicles.
- Automotive DC/DC Converter for HEV: Ideal for power conversion in hybrid electric vehicles.
- High-Performance Power Conversion: Used in various high-voltage DC/DC conversion applications.
Q & A
- What is the maximum drain-to-source voltage (VDSS) of the FCD5N60-F085?
The maximum drain-to-source voltage (VDSS) is 600V.
- What is the typical on-resistance (RDS(on)) of the FCD5N60-F085?
The typical on-resistance (RDS(on)) is 0.86Ω at VGS = 10V and TJ = 25°C.
- What is the total gate charge (Qg(ToT)) of the FCD5N60-F085?
The total gate charge (Qg(ToT)) is 16 nC.
- Is the FCD5N60-F085 RoHS compliant?
Yes, the FCD5N60-F085 is RoHS compliant.
- What are the typical applications of the FCD5N60-F085?
The FCD5N60-F085 is typically used in automotive on-board chargers and DC/DC converters for hybrid electric vehicles.
- What is the maximum continuous drain current (ID) of the FCD5N60-F085?
The maximum continuous drain current (ID) is 4.6A at VGS = 10V and TC = 25°C.
- What is the thermal resistance, junction to case (RθJC), of the FCD5N60-F085?
The thermal resistance, junction to case (RθJC), is 2.3°C/W.
- What is the gate to source threshold voltage (VGS(th)) of the FCD5N60-F085?
The gate to source threshold voltage (VGS(th)) is between 3.0V and 5.0V.
- Is the FCD5N60-F085 qualified to any automotive standards?
Yes, the FCD5N60-F085 is qualified to the AEC Q101 standard.
- What is the single pulse avalanche energy (EAS) of the FCD5N60-F085?
The single pulse avalanche energy (EAS) is 29 mJ.
