Overview
The BSS123-F169, although marked as obsolete, is an N-Channel enhancement mode field effect transistor produced by onsemi. This MOSFET is designed using onsemi’s proprietary high cell density DMOS technology to minimize on-state resistance while providing rugged, reliable, and fast switching performance. It is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Key Specifications
| Parameter | Symbol | Min | Max | Unit | Test Conditions | |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | - | - | 100 | V | VGS = 0V, ID = 250μA |
| Gate-Source Voltage | VGSS | - | - | ±20 | V | - |
| Drain Current - Continuous | ID | - | - | 0.17 | A | - |
| Drain Current - Pulsed | ID | - | - | 0.68 | A | - |
| Maximum Power Dissipation | PD | - | - | 0.36 | W | - |
| Gate Threshold Voltage | VGS(TH) | 0.8 | 1.4 | 2.0 | V | VDS = VGS, ID = 1mA |
| On-State Resistance | RDS(ON) | - | 3.2 | 6.0 | Ω | VGS = 10V, ID = 0.17A |
| On-State Resistance | RDS(ON) | - | 3.8 | 10 | Ω | VGS = 4.5V, ID = 0.17A |
| Input Capacitance | Ciss | - | 22 | 60 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | - | - | 8 | ns | VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω |
| Turn-Off Delay Time | tD(OFF) | - | - | 13 | ns | VGS = 10V, VDD = 30V, ID = 0.28A, RGEN = 50Ω |
Key Features
- Logic Level N-Channel MOSFET: Suitable for low voltage applications with a low gate threshold voltage of 0.8 to 2.0 V.
- Low On-State Resistance: RDS(ON) = 6 Ω @ VGS = 10 V and RDS(ON) = 10 Ω @ VGS = 4.5 V.
- High Density Cell Design: Minimizes on-state resistance and enhances switching performance.
- Rugged and Reliable: Designed for robust operation in various applications.
- Compact Package: Available in the industry standard SOT-23 surface mount package.
- Fast Switching Speed: Turn-on delay time of 8 ns and turn-off delay time of 13 ns.
- Low Input Capacitance: Input capacitance of 22 to 60 pF at VDS = 25 V, VGS = 0 V, f = 1.0 MHz.
- Pb-Free and Halogen-Free: Compliant with environmental regulations.
Applications
- Small Servo Motor Control: Ideal for controlling small servo motors due to its low voltage and current capabilities.
- Power MOSFET Gate Drivers: Used in driving gates of power MOSFETs in various switching circuits.
- Switching Applications: Suitable for other low voltage, low current switching applications.
- Level Shifting Applications: Can be used in level shifting circuits due to its low threshold voltage.
Q & A
- What is the maximum drain-source voltage of the BSS123?
The maximum drain-source voltage (VDSS) is 100 V.
- What is the typical gate threshold voltage of the BSS123?
The typical gate threshold voltage (VGS(TH)) is 1.4 V, ranging from 0.8 to 2.0 V.
- What is the on-state resistance of the BSS123 at VGS = 10 V?
The on-state resistance (RDS(ON)) at VGS = 10 V is typically 3.2 Ω, with a maximum of 6 Ω.
- What is the package type of the BSS123?
The BSS123 is available in the industry standard SOT-23 surface mount package.
- What are the typical turn-on and turn-off delay times of the BSS123?
The turn-on delay time is typically 8 ns, and the turn-off delay time is typically 13 ns.
- Is the BSS123 Pb-Free and Halogen-Free?
- What are some common applications of the BSS123?
- What is the maximum continuous drain current of the BSS123?
D) is 0.17 A. - What is the input capacitance of the BSS123?
iss) is typically 22 to 60 pF at VDS = 25 V, VGS = 0 V, f = 1.0 MHz. - Is the BSS123-F169 still available for purchase?
