Overview
The BDW94CFTU is a PNP Epitaxial Silicon Darlington Transistor manufactured by ON Semiconductor. This transistor is designed for power linear and switching applications, making it a versatile component for various electronic systems. It is part of the BDW94 series, which includes complementary transistors such as the BDW93 and BDW93C. The BDW94CFTU is packaged in a TO-220F-3 through-hole configuration, ensuring robust mechanical and thermal performance.
Key Specifications
| Parameter | Value | Units |
|---|---|---|
| Collector-Base Voltage (VCBO) | -100 | V |
| Collector-Emitter Voltage (VCEO) | -100 | V |
| Collector Current (DC) (IC) | -12 | A |
| Collector Current (Pulse) (ICP) | -15 | A |
| Base Current (IB) | -0.2 | A |
| Collector Dissipation (PC) | 80 | W |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -65 to 150 | °C |
| DC Current Gain (hFE) | 1000 (min) at IC = -3A, VCE = -3V | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -2 to -3 V at IC = -5A to -10A, IB = -20mA to -100mA | |
| Base-Emitter Saturation Voltage (VBE(sat)) | -2.5 to -4 V at IC = -5A to -10A, IB = -20mA to -100mA |
Key Features
- High Current Capability: The BDW94CFTU can handle high collector currents up to 12 A (DC) and 15 A (pulse), making it suitable for power-intensive applications.
- High Voltage Handling: With a collector-base voltage and collector-emitter voltage of -100 V, this transistor can handle high voltage requirements.
- High DC Current Gain: The transistor has a high DC current gain (hFE) of up to 1000, ensuring efficient amplification of base current.
- Low Saturation Voltages: The collector-emitter and base-emitter saturation voltages are relatively low, which helps in minimizing power losses during operation.
- Rugged Packaging: The TO-220F-3 package provides good thermal and mechanical stability, suitable for a variety of power applications.
Applications
The BDW94CFTU is widely used in various power linear and switching applications, including:
- Power Amplifiers: Due to its high current and voltage handling capabilities, it is ideal for power amplifier circuits.
- Motor Control: It can be used in motor control circuits where high current and voltage are required.
- Power Supplies: The transistor is suitable for use in power supply circuits, especially those requiring high current output.
- Industrial Automation: It can be used in various industrial automation applications where robust and reliable power switching is necessary.
Q & A
- What is the maximum collector current of the BDW94CFTU?
The maximum collector current (DC) is -12 A, and the maximum collector current (pulse) is -15 A. - What is the collector-emitter voltage rating of the BDW94CFTU?
The collector-emitter voltage (VCEO) is rated at -100 V. - What is the junction temperature range of the BDW94CFTU?
The junction temperature (TJ) range is from -65°C to 150°C. - What is the typical DC current gain (hFE) of the BDW94CFTU?
The typical DC current gain (hFE) is 1000 at IC = -3A and VCE = -3V. - What is the collector-emitter saturation voltage of the BDW94CFTU?
The collector-emitter saturation voltage (VCE(sat)) ranges from -2 to -3 V depending on the collector and base currents. - What type of package does the BDW94CFTU come in?
The BDW94CFTU is packaged in a TO-220F-3 through-hole configuration. - Is the BDW94CFTU suitable for use in life support systems or medical devices?
No, the BDW94CFTU is not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices. - What are some common applications of the BDW94CFTU?
Common applications include power amplifiers, motor control, power supplies, and industrial automation. - How does the BDW94CFTU handle high voltage and current requirements?
The transistor is designed to handle high voltage and current requirements with its high collector-base and collector-emitter voltage ratings and high collector current capability. - What is the significance of the low saturation voltages in the BDW94CFTU?
The low collector-emitter and base-emitter saturation voltages help in minimizing power losses during operation, making the transistor more efficient.
