BDW93CFTU
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onsemi BDW93CFTU

Manufacturer No:
BDW93CFTU
Manufacturer:
onsemi
Package:
Tube
Description:
TRANS NPN DARL 100V 12A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BDW93CFTU is an NPN Epitaxial Silicon Transistor produced by ON Semiconductor. This transistor is part of the BDW93 series, which includes various models such as BDW93, BDW93A, BDW93B, and BDW93C. The BDW93CFTU is specifically designed for high-power applications, featuring a Darlington configuration that enhances current gain and switching capabilities.

This transistor is housed in a TO-220 package, making it suitable for a wide range of applications that require robust and reliable performance. The BDW93CFTU is complemented by the BDW94 series, which are PNP transistors, allowing for balanced circuit designs.

Key Specifications

Parameter Value Units
Collector-Base Voltage (VCBO) 100 V
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (DC) (IC) 12 A
Collector Current (Pulse) (ICP) 15 A
Base Current (IB) 0.2 A
Collector Dissipation (PC) 80 W
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -65 to 150 °C
Thermal Resistance (Rθjc) 1.5 °C/W
Collector-Emitter Sustaining Voltage (BVCEO(sus)) 100 V
Collector Cut-off Current (ICBO) 100 µA µA
Collector Cut-off Current (ICEO) 1 mA mA
Emitter Cut-off Current (IEBO) 2 mA mA
DC Current Gain (hFE) 1000 (min), 20000 (max)
Collector-Emitter Saturation Voltage (VCE(sat)) 2 V (IC = 5A, IB = 20mA), 3 V (IC = 10A, IB = 100mA) V
Base-Emitter Saturation Voltage (VBE(sat)) 2.5 V (IC = 5A, IB = 20mA), 4 V (IC = 10A, IB = 100mA) V
Parallel Diode Forward Voltage (VF) 1.3 V (IF = 5A), 1.8 V (IF = 10A) V

Key Features

  • High Current Gain: The BDW93CFTU features a high DC current gain, ranging from 1000 to 20000, making it suitable for applications requiring significant current amplification.
  • High Collector-Emitter Voltage: With a collector-emitter voltage of up to 100V, this transistor can handle high voltage applications.
  • High Collector Current: The transistor can handle a maximum collector current of 12A (DC) and 15A (pulse), making it ideal for high-power applications.
  • Low Saturation Voltage: The collector-emitter saturation voltage is as low as 2V, which helps in reducing power losses in switching applications.
  • Complementary Transistors: The BDW93CFTU has complementary PNP transistors in the BDW94 series, allowing for balanced and efficient circuit designs.

Applications

  • Hammer Drivers: The high current and voltage handling capabilities make the BDW93CFTU suitable for hammer driver applications.
  • Audio Amplifiers: Its high current gain and low saturation voltage make it a good choice for audio amplifier circuits.
  • Power Switching: The transistor's ability to handle high currents and voltages makes it suitable for power switching applications.
  • Industrial Control Systems: It can be used in various industrial control systems where high reliability and performance are required.

Q & A

  1. What is the maximum collector-emitter voltage of the BDW93CFTU?

    The maximum collector-emitter voltage (VCEO) of the BDW93CFTU is 100V.

  2. What is the maximum collector current of the BDW93CFTU?

    The maximum collector current (IC) of the BDW93CFTU is 12A (DC) and 15A (pulse).

  3. What is the thermal resistance of the BDW93CFTU?

    The thermal resistance (Rθjc) of the BDW93CFTU is 1.5°C/W.

  4. What are the typical applications of the BDW93CFTU?

    The BDW93CFTU is typically used in hammer drivers, audio amplifiers, power switching, and industrial control systems.

  5. What is the storage temperature range for the BDW93CFTU?

    The storage temperature range for the BDW93CFTU is -65°C to 150°C.

  6. What is the DC current gain of the BDW93CFTU?

    The DC current gain (hFE) of the BDW93CFTU ranges from 1000 to 20000.

  7. What is the collector-emitter saturation voltage of the BDW93CFTU?

    The collector-emitter saturation voltage (VCE(sat)) of the BDW93CFTU is 2V (IC = 5A, IB = 20mA) and 3V (IC = 10A, IB = 100mA).

  8. What is the base-emitter saturation voltage of the BDW93CFTU?

    The base-emitter saturation voltage (VBE(sat)) of the BDW93CFTU is 2.5V (IC = 5A, IB = 20mA) and 4V (IC = 10A, IB = 100mA).

  9. Does the BDW93CFTU have a complementary transistor?

    Yes, the BDW93CFTU has complementary PNP transistors in the BDW94 series.

  10. What package type is the BDW93CFTU available in?

    The BDW93CFTU is available in a TO-220 package.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):12 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:3V @ 100mA, 10A
Current - Collector Cutoff (Max):1mA
DC Current Gain (hFE) (Min) @ Ic, Vce:750 @ 5A, 3V
Power - Max:80 W
Frequency - Transition:- 
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-220-3
Supplier Device Package:TO-220-3
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Same Series
BDW93
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TRANS NPN DARL 45V 12A TO220-3
BDW93CFTU
BDW93CFTU
TRANS NPN DARL 100V 12A TO220-3
BDW93A
BDW93A
TRANS NPN DARL 60V 12A TO220-3

Similar Products

Part Number BDW93CFTU BDW93CTU BDW94CFTU
Manufacturer onsemi onsemi onsemi
Product Status Obsolete Last Time Buy Active
Transistor Type NPN - Darlington NPN - Darlington PNP - Darlington
Current - Collector (Ic) (Max) 12 A 12 A 12 A
Voltage - Collector Emitter Breakdown (Max) 100 V 100 V 100 V
Vce Saturation (Max) @ Ib, Ic 3V @ 100mA, 10A 3V @ 100mA, 10A 3V @ 100mA, 10A
Current - Collector Cutoff (Max) 1mA 1mA 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 5A, 3V 750 @ 5A, 3V 750 @ 5A, 3V
Power - Max 80 W 80 W 80 W
Frequency - Transition - - -
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-220-3 TO-220-3 TO-220-3 Full Pack
Supplier Device Package TO-220-3 TO-220-3 TO-220F-3

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