Overview
The BC848BDW1T1 is a dual NPN bipolar transistor designed for general purpose amplifier applications. It is manufactured by onsemi and housed in the SOT-363/SC-88 package, which is optimized for low power surface mount applications. This transistor is part of the BC848 series, known for its reliability and compliance with various industry standards.
The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, making it suitable for a wide range of applications, including those requiring unique site and control change requirements. It is AEC-Q101 Qualified and PPAP Capable, ensuring its use in automotive and other demanding environments.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 30 | V |
| Collector-Base Voltage | VCBO | 30 | V |
| Emitter-Base Voltage | VEBO | 5.0 | V |
| Collector Current - Continuous | IC | 100 | mAdc |
| Total Device Dissipation Per Device (FR-5 Board, TA = 25°C) | PD | 250 | mW |
| Thermal Resistance, Junction-to-Ambient | RJA | 328 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 200 - 450 | |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
Key Features
- Pb-Free, Halogen Free/BFR Free and RoHS Compliant: Ensures environmental compliance and safety.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring stringent quality standards.
- Low Power Surface Mount Package (SOT-363/SC-88): Ideal for compact and efficient designs.
- High Current Gain (hFE): Ranges from 200 to 450, making it suitable for various amplifier applications.
- Low VCE(sat): Ensures low saturation voltage, which is beneficial for reducing power consumption.
- High Current-Gain - Bandwidth Product (fT): Up to 100 MHz, suitable for high-frequency applications.
Applications
- General Purpose Amplifier Applications: Suitable for a wide range of amplifier circuits due to its balanced current gain and low noise figure.
- Automotive Electronics: AEC-Q101 qualification makes it reliable for use in automotive systems.
- Consumer Electronics: Used in various consumer electronic devices requiring compact and efficient transistor solutions.
- Industrial Control Systems: Reliable performance in industrial environments due to its robust specifications.
Q & A
- What is the package type of the BC848BDW1T1 transistor?
The BC848BDW1T1 transistor is housed in the SOT-363/SC-88 package.
- Is the BC848BDW1T1 RoHS Compliant?
- What is the maximum collector-emitter voltage (VCEO) for the BC848BDW1T1?
The maximum collector-emitter voltage (VCEO) for the BC848BDW1T1 is 30 V.
- What is the typical current gain (hFE) of the BC848BDW1T1?
The typical current gain (hFE) of the BC848BDW1T1 ranges from 200 to 450.
- What is the thermal resistance, junction-to-ambient (RJA) for the BC848BDW1T1?
The thermal resistance, junction-to-ambient (RJA) for the BC848BDW1T1 is 328 °C/W.
- Is the BC848BDW1T1 suitable for automotive applications?
- What is the maximum collector current (IC) for the BC848BDW1T1?
The maximum collector current (IC) for the BC848BDW1T1 is 100 mA.
- What is the current-gain - bandwidth product (fT) of the BC848BDW1T1?
The current-gain - bandwidth product (fT) of the BC848BDW1T1 is up to 100 MHz.
- What is the output capacitance (Cobo) of the BC848BDW1T1?
The output capacitance (Cobo) of the BC848BDW1T1 is 4.5 pF.
- What are the typical operating temperatures for the BC848BDW1T1?
The junction and storage temperature range for the BC848BDW1T1 is -55 to +150 °C.
