Overview
The BC847CDW1T1H is a general-purpose NPN epitaxial silicon transistor produced by onsemi. This transistor is part of the BC847 series, which is designed for a wide range of applications including switching and amplifier circuits. It is housed in the SOT-363/SC-88 package, making it suitable for low power surface mount applications.
Key Specifications
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | - | - | 50 | V |
| Collector-Emitter Voltage | VCEO | - | - | 45 | V |
| Emitter-Base Voltage | VEBO | - | - | 6 | V |
| Collector Current (DC) | IC | - | - | 100 | mA |
| Junction Temperature | TJ | - | - | 150 | °C |
| Storage Temperature Range | TSTG | -65 | - | 150 | °C |
| Power Dissipation | PD | - | - | 310 | mW |
| Thermal Resistance, Junction-to-Ambient | RθJA | - | - | 403 | °C/W |
| DC Current Gain (hFE) | hFE | 200 | 420 | 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.1 | - | 0.6 | mV |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.7 | - | 0.9 | mV |
Key Features
- General-purpose NPN epitaxial silicon transistor suitable for switching and amplifier applications.
- Low noise characteristics, particularly in the BC850 variant.
- Suitable for automatic insertion in thick and thin-film circuits.
- Housed in the SOT-363/SC-88 package, ideal for low power surface mount applications.
- High DC current gain (hFE) with classifications ranging from 200 to 800.
- Low collector-emitter and base-emitter saturation voltages.
Applications
- Switching circuits: The BC847CDW1T1H is suitable for various switching applications due to its high current gain and low saturation voltages.
- Amplifier circuits: It is designed for general-purpose amplifier applications, making it versatile in audio, signal processing, and other electronic circuits.
- Automotive and industrial control systems: Its robust specifications make it suitable for use in automotive and industrial control systems.
- Consumer electronics: It can be used in a variety of consumer electronic devices requiring reliable and efficient transistor performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the BC847CDW1T1H transistor?
The maximum collector-emitter voltage (VCEO) for the BC847CDW1T1H transistor is 45 V.
- What is the typical DC current gain (hFE) for this transistor?
The typical DC current gain (hFE) for the BC847CDW1T1H transistor ranges from 200 to 800, depending on the classification.
- What is the maximum collector current (IC) for this transistor?
The maximum collector current (IC) for the BC847CDW1T1H transistor is 100 mA.
- What is the thermal resistance, junction-to-ambient (RθJA), for this transistor?
The thermal resistance, junction-to-ambient (RθJA), for the BC847CDW1T1H transistor is 403 °C/W.
- What package type is the BC847CDW1T1H transistor housed in?
The BC847CDW1T1H transistor is housed in the SOT-363/SC-88 package.
- What are the typical applications for the BC847CDW1T1H transistor?
The BC847CDW1T1H transistor is typically used in switching and amplifier applications, as well as in automotive, industrial, and consumer electronics.
- What is the maximum junction temperature (TJ) for this transistor?
The maximum junction temperature (TJ) for the BC847CDW1T1H transistor is 150 °C.
- What is the storage temperature range (TSTG) for this transistor?
The storage temperature range (TSTG) for the BC847CDW1T1H transistor is -65 to +150 °C.
- What is the power dissipation (PD) for this transistor?
The power dissipation (PD) for the BC847CDW1T1H transistor is 310 mW.
- What are the collector-emitter and base-emitter saturation voltages for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is typically 0.1 to 0.6 mV, and the base-emitter saturation voltage (VBE(sat)) is typically 0.7 to 0.9 mV.
- Is the BC847CDW1T1H transistor suitable for low noise applications?
Yes, the BC847CDW1T1H transistor, particularly the BC850 variant, is known for its low noise characteristics.
