Overview
The BC33725TAR is an NPN epitaxial silicon transistor manufactured by onsemi. This transistor is designed for a variety of applications, including switching and amplifier stages. It is particularly suitable for audio-frequency (AF) driver stages and low-power output stages. The BC337 series is known for its reliability and performance in various electronic circuits.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Base Voltage (VCBO) | 50 | V |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 800 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to +150 | °C |
| Power Dissipation (PD) | 625 mW | mW |
| Thermal Resistance, Junction to Ambient (RJA) | 200 | °C/W |
| Current Gain (hFE1) | 100 - 630 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | 0.7 | V |
| Base-Emitter On Voltage (VBE(on)) | 1.2 | V |
| Current Gain Bandwidth Product (fT) | 100 MHz | MHz |
Key Features
- Switching and amplifier applications
- Suitable for AF-driver stages and low-power output stages
- High current gain (hFE) with classifications of 100-630
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V
- High current gain bandwidth product (fT) of 100 MHz
- Pb-free packaging options available
Applications
The BC33725TAR transistor is versatile and can be used in a variety of electronic circuits, including:
- Audio-frequency (AF) driver stages
- Low-power output stages
- Switching circuits
- Amplifier circuits
- General-purpose transistor applications where high current gain and low saturation voltage are required.
Q & A
- What is the maximum collector current of the BC33725TAR transistor?
The maximum collector current is 800 mA. - What is the maximum collector-emitter voltage (VCEO) of the BC33725TAR transistor?
The maximum collector-emitter voltage is 45 V. - What is the junction temperature range for the BC33725TAR transistor?
The junction temperature range is up to 150°C. - What is the typical current gain (hFE) of the BC33725TAR transistor?
The typical current gain ranges from 100 to 630. - What is the collector-emitter saturation voltage (VCE(sat)) of the BC33725TAR transistor?
The collector-emitter saturation voltage is 0.7 V. - What is the current gain bandwidth product (fT) of the BC33725TAR transistor?
The current gain bandwidth product is 100 MHz. - Is the BC33725TAR transistor available in Pb-free packaging?
Yes, Pb-free packaging options are available. - What are the typical applications of the BC33725TAR transistor?
The transistor is typically used in AF-driver stages, low-power output stages, switching circuits, and amplifier circuits. - What is the thermal resistance, junction to ambient (RJA), of the BC33725TAR transistor?
The thermal resistance is 200 °C/W. - What is the storage temperature range for the BC33725TAR transistor?
The storage temperature range is -55 to +150 °C.
