Overview
The BC32725TAR is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is designed for a variety of applications, including switching and amplifier stages. It is particularly suitable for audio-frequency (AF) driver stages and low-power output stages. The BC327 series is a complement to the BC337 and BC338 transistors, offering a range of current gain classifications to meet different design requirements.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCES) | -50 | V |
| Collector-Emitter Voltage (VCEO) | -45 | V |
| Emitter-Base Voltage (VEBO) | -5 | V |
| Collector Current (IC) | -800 | mA |
| Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (TSTG) | -55 to 150 | °C |
| Power Dissipation (PD) | 625 | mW |
| Thermal Resistance, Junction to Ambient (RθJA) | 200 | °C/W |
| DC Current Gain (hFE1) at IC = -100 mA | 100 - 630 | |
| DC Current Gain (hFE2) at IC = -300 mA | 60 - 170 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | -0.7 | V |
| Base-Emitter On Voltage (VBE(on)) | -1.2 | V |
| Current Gain Bandwidth Product (fT) | 100 | MHz |
| Output Capacitance (Cob) | 12 | pF |
Key Features
- PNP epitaxial silicon transistor suitable for switching and amplifier applications.
- Complement to BC337 and BC338 transistors.
- Pb-free device, making it environmentally friendly.
- Available in various current gain classifications (hFE): 16, 25, and 40.
- Low-power output stages and AF-driver stages compatibility.
Applications
The BC32725TAR transistor is versatile and can be used in a variety of electronic circuits, including:
- Audio-frequency (AF) driver stages.
- Low-power output stages.
- Switching applications.
- Amplifier circuits.
Q & A
- What is the maximum collector-emitter voltage (VCES) for the BC32725TAR transistor?
The maximum collector-emitter voltage (VCES) is -50 V. - What is the maximum collector current (IC) for this transistor?
The maximum collector current (IC) is -800 mA. - What are the storage temperature limits for the BC32725TAR?
The storage temperature limits are -55°C to 150°C. - What is the thermal resistance, junction to ambient (RθJA), for this transistor?
The thermal resistance, junction to ambient (RθJA), is 200 °C/W. - What are the typical DC current gain values for the BC32725TAR?
The typical DC current gain values are 100 - 630 for hFE1 and 60 - 170 for hFE2. - Is the BC32725TAR Pb-free?
Yes, the BC32725TAR is a Pb-free device. - What are the common applications for the BC32725TAR transistor?
Common applications include AF-driver stages, low-power output stages, switching applications, and amplifier circuits. - What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.7 V. - What is the base-emitter on voltage (VBE(on)) for the BC32725TAR?
The base-emitter on voltage (VBE(on)) is -1.2 V. - What is the current gain bandwidth product (fT) for this transistor?
The current gain bandwidth product (fT) is 100 MHz.
