BC32725TA
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onsemi BC32725TA

Manufacturer No:
BC32725TA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS PNP 45V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC32725TA is a PNP epitaxial silicon transistor manufactured by onsemi. This transistor is designed for a variety of applications, including switching and amplifier stages. It is particularly suitable for audio-frequency driver stages and low-power output stages. The BC32725TA is a complement to the BC337 and BC338 NPN transistors, offering a balanced set of characteristics for bipolar transistor pairs in circuit designs.

Key Specifications

Parameter Value Unit
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current (IC) -800 mA
Collector-Emitter Voltage (VCEO) -45 V
Emitter-Base Voltage (VEBO) -5 V
Collector-Emitter Saturation Voltage (VCE(sat)) -0.7 V
Base-Emitter On Voltage (VBE(on)) -1.2 V
Power Dissipation (Pd) 625 mW
Gain Bandwidth Product (fT) 100 MHz
Junction Temperature (TJ) 150 °C
Storage Temperature (TSTG) -55 to +150 °C
Package Type TO-92

Key Features

  • PNP epitaxial silicon transistor suitable for switching and amplifier applications.
  • Complement to BC337 and BC338 NPN transistors.
  • Lead-free device, making it compliant with environmental regulations.
  • High DC current gain (hFE) with a range of 100 to 630.
  • Low collector-emitter saturation voltage (VCE(sat)) of -0.7 V.
  • High gain bandwidth product (fT) of 100 MHz.

Applications

  • Audio-frequency driver stages.
  • Low-power output stages.
  • General-purpose switching and amplification in electronic circuits.
  • Circuit designs requiring balanced transistor pairs (with BC337/BC338).

Q & A

  1. What is the maximum DC collector current of the BC32725TA transistor?

    The maximum DC collector current is -800 mA.

  2. What is the collector-emitter voltage (VCEO) rating of the BC32725TA?

    The collector-emitter voltage (VCEO) rating is -45 V.

  3. What is the emitter-base voltage (VEBO) rating of the BC32725TA?

    The emitter-base voltage (VEBO) rating is -5 V.

  4. What is the typical gain bandwidth product (fT) of the BC32725TA?

    The typical gain bandwidth product (fT) is 100 MHz.

  5. What is the junction temperature (TJ) limit for the BC32725TA?

    The junction temperature (TJ) limit is 150°C.

  6. What type of package does the BC32725TA come in?

    The BC32725TA comes in a TO-92 package.

  7. Is the BC32725TA a lead-free device?
  8. What are some common applications for the BC32725TA transistor?
  9. What is the collector-emitter saturation voltage (VCE(sat)) of the BC32725TA?

    The collector-emitter saturation voltage (VCE(sat)) is -0.7 V.

  10. What is the base-emitter on voltage (VBE(on)) of the BC32725TA?

    The base-emitter on voltage (VBE(on)) is -1.2 V.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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In Stock

$0.41
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Similar Products

Part Number BC32725TA BC33725TA BC32825TA BC32725TF BC32725TAR
Manufacturer onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor onsemi
Product Status Active Active Obsolete Obsolete Obsolete
Transistor Type PNP NPN PNP PNP PNP
Current - Collector (Ic) (Max) 800 mA 800 mA 800 mA 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 45 V 25 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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