BC33725TA
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onsemi BC33725TA

Manufacturer No:
BC33725TA
Manufacturer:
onsemi
Package:
Cut Tape (CT)
Description:
TRANS NPN 45V 0.8A TO92-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC33725TA is a general-purpose NPN bipolar junction transistor (BJT) produced by onsemi. It is designed for low to medium power amplification and switching applications, making it versatile for use in various electronic circuits. This transistor is suitable for hobby projects, educational settings, and small electronic devices due to its moderate current and voltage ratings.

Key Specifications

Parameter Value Unit
Package TO-92-3
Polarity NPN
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 50 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.8 A
Power Dissipation (PD) 0.625 W
Transition Frequency (ft) 100 MHz
DC Current Gain (hFE) 100 - 400
Maximum Operating Junction Temperature (Tj) 150 °C

Key Features

  • General Purpose: Suitable for a wide range of amplification and switching applications.
  • Low to Medium Power: Designed for low to medium power operation in circuits.
  • Versatile: Offers moderate current and voltage ratings for versatility in electronic projects.
  • NPN Transistor: NPN polarity for use in common electronic configurations.
  • Cost-Effective: Provides a cost-effective solution for basic electronic circuit needs.

Applications

  • Amplification: Used for signal amplification in audio and RF circuits.
  • Switching: Suitable for low to medium power switching applications.
  • Hobby Electronics: Ideal for hobbyists and students working on electronic projects.
  • AF-Driver Stages and Low Power Output Stages: Suitable for use in these types of applications due to its characteristics.

Q & A

  1. Q: What is the maximum power rating of the BC33725TA?

    A: The BC33725TA has a maximum power dissipation rating of 0.625 W under specified conditions.

  2. Q: Can the BC33725TA be used in audio amplifier circuits?

    A: Yes, the BC33725TA is suitable for use in low to medium power audio amplifier circuits. Ensure proper biasing and thermal management for optimal performance.

  3. Q: How many pins does the BC33725TA have and what are their functions?

    A: The BC33725TA is a three-terminal device with the following pinout configuration: Emitter (E), Base (B), and Collector (C).

  4. Q: What are the pros and cons of using the BC33725TA?

    A: Pros include low cost, ease of use, and wide availability. Cons include lower power handling and limited frequency response.

  5. Q: Are there any equivalents or alternatives to the BC33725TA?

    A: Equivalents include the 2N3904 and BC546. The BC33725TA can also be complemented by the BC32725TA, a PNP transistor, for complementary switching configurations.

  6. Q: What is the transition frequency (ft) of the BC33725TA?

    A: The transition frequency (ft) of the BC33725TA is 100 MHz.

  7. Q: What is the maximum collector current (IC) of the BC33725TA?

    A: The maximum collector current (IC) of the BC33725TA is 0.8 A.

  8. Q: What is the maximum operating junction temperature (Tj) of the BC33725TA?

    A: The maximum operating junction temperature (Tj) of the BC33725TA is 150 °C.

  9. Q: Is the BC33725TA RoHS compliant?

    A: Yes, the BC33725TA is RoHS compliant.

  10. Q: What is the typical DC current gain (hFE) of the BC33725TA?

    A: The typical DC current gain (hFE) of the BC33725TA ranges from 100 to 400.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):800 mA
Voltage - Collector Emitter Breakdown (Max):45 V
Vce Saturation (Max) @ Ib, Ic:700mV @ 50mA, 500mA
Current - Collector Cutoff (Max):100nA
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 100mA, 1V
Power - Max:625 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package:TO-92-3
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Similar Products

Part Number BC33725TA BC33825TA BC33725TF BC33725TAR BC32725TA
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Obsolete Active Active
Transistor Type NPN NPN NPN NPN PNP
Current - Collector (Ic) (Max) 800 mA 800 mA 800 mA 800 mA 800 mA
Voltage - Collector Emitter Breakdown (Max) 45 V 25 V 45 V 45 V 45 V
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max) 100nA 100nA 100nA 100nA 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V 160 @ 100mA, 1V
Power - Max 625 mW 625 mW 625 mW 625 mW 625 mW
Frequency - Transition 100MHz 100MHz 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 TO-92-3 TO-92-3

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