2N4922G
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onsemi 2N4922G

Manufacturer No:
2N4922G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 60V 1A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N4922G is a medium-power plastic NPN silicon transistor produced by onsemi. This high-performance device is designed for various applications including driver circuits, switching, and amplifier roles. It is part of the 2N492xG series, which includes the 2N4921G and 2N4923G models, each with different voltage ratings. The 2N4922G is known for its low saturation voltage, excellent power dissipation, and safe operating area, making it a reliable choice for a wide range of electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO60Vdc
Collector-Base VoltageVCB60Vdc
Emitter-Base VoltageVEB5.0Vdc
Collector Current - ContinuousIC1.0Adc
Collector Current - PeakICM3.0Adc
Base Current - ContinuousIB1.0Adc
Total Power Dissipation @ TC = 25°CPD30W
Thermal Resistance, Junction-to-CaseRJC4.16°C/W
Operating and Storage Junction Temperature RangeTJ, Tstg–65 to +150°C

Key Features

  • Low Saturation Voltage: Ensures efficient operation with minimal voltage drop.
  • Excellent Power Dissipation: Capable of handling up to 30 watts of power dissipation.
  • Excellent Safe Operating Area: Provides a wide range of safe operating conditions.
  • Pb-Free and RoHS Compliant: Environmentally friendly and compliant with regulatory standards.
  • Complement to PNP 2N4920G: Offers a matching PNP transistor for balanced circuit designs.

Applications

The 2N4922G transistor is suitable for a variety of applications, including:

  • Driver Circuits: Ideal for driving loads in power amplifiers and motor control systems.
  • Switching Applications: Used in switching circuits where high current and voltage handling are required.
  • Amplifier Applications: Suitable for use in linear and switching amplifiers due to its high current gain and low saturation voltage.

Q & A

  1. What is the maximum collector-emitter voltage for the 2N4922G transistor?
    The maximum collector-emitter voltage (VCEO) for the 2N4922G is 60 Vdc.
  2. What is the continuous collector current rating of the 2N4922G?
    The continuous collector current (IC) rating is 1.0 Adc.
  3. What is the peak collector current handling capability of the 2N4922G?
    The peak collector current (ICM) handling capability is 3.0 Adc.
  4. Is the 2N4922G Pb-Free and RoHS compliant?
    Yes, the 2N4922G is Pb-Free and RoHS compliant.
  5. What is the thermal resistance, junction-to-case (RJC) for the 2N4922G?
    The thermal resistance, junction-to-case (RJC) is 4.16 °C/W.
  6. What are the operating and storage junction temperature ranges for the 2N4922G?
    The operating and storage junction temperature ranges are –65 to +150 °C.
  7. What are some typical applications for the 2N4922G transistor?
    Typical applications include driver circuits, switching applications, and amplifier applications.
  8. Does the 2N4922G have a complement in PNP form?
    Yes, the 2N4922G has a complement in PNP form, the 2N4920G.
  9. What is the maximum power dissipation for the 2N4922G at 25°C case temperature?
    The maximum power dissipation (PD) at 25°C case temperature is 30 watts.
  10. How many units are typically shipped in a box for the 2N4922G?
    The 2N4922G is typically shipped in boxes of 500 units.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):60 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 1V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
2N4922G
2N4922G
TRANS NPN 60V 1A TO126
2N4921G
2N4921G
TRANS NPN 40V 1A TO126
2N4921
2N4921
TRANS NPN 40V 1A TO126

Similar Products

Part Number 2N4922G 2N4923G 2N4920G 2N4921G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN NPN PNP NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 60 V 80 V 80 V 40 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V
Power - Max 30 W 30 W 30 W 30 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126

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