2N4920G
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onsemi 2N4920G

Manufacturer No:
2N4920G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 80V 1A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N4920G is a medium-power, high-performance PNP silicon transistor manufactured by onsemi. This device is part of the 2N4918-2N4920 series and is designed for various applications including driver circuits, switching, and amplifier roles. The 2N4920G is known for its excellent power dissipation and safe operating area, making it a reliable choice for a range of electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Collector-Base VoltageVCBO80Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector Current - ContinuousIC1.0 A (JEDEC), 3.0 A (actual)A
Base CurrentIB1.0 AA
Total Power Dissipation @ TA = 25°CPD30 WW
Operating and Storage Junction Temperature RangeTJ, Tstg-65 to +150 °C°C
Thermal Resistance, Junction-to-CaseJC4.16 °C/W°C/W
Collector-Emitter Saturation VoltageVCE(sat)0.6 Vdc @ IC = 1.0 A, IB = 0.1 AVdc
Base-Emitter Saturation VoltageVBE(sat)1.3 Vdc @ IC = 1.0 A, IB = 0.1 AVdc

Key Features

  • Low Saturation Voltage: VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
  • Excellent Power Dissipation: PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 A
  • Complement to NPN 2N4921, 2N4922, 2N4923
  • Pb-Free Package Available

Applications

The 2N4920G transistor is suitable for a variety of applications, including:

  • Driver Circuits
  • Switching Circuits
  • Amplifier Circuits

Q & A

  1. What is the maximum collector-emitter voltage for the 2N4920G transistor?
    The maximum collector-emitter voltage (VCEO) for the 2N4920G is 80 Vdc.
  2. What is the maximum collector current for the 2N4920G?
    The maximum collector current (IC) is 1.0 A based on JEDEC current gain requirements, and up to 3.0 A based on the actual current-handling capability of the device.
  3. What is the thermal resistance of the 2N4920G?
    The thermal resistance, junction-to-case (JC), is 4.16 °C/W.
  4. What is the collector-emitter saturation voltage for the 2N4920G?
    The collector-emitter saturation voltage (VCE(sat)) is 0.6 Vdc at IC = 1.0 A and IB = 0.1 A.
  5. Is the 2N4920G available in a Pb-Free package?
    Yes, the 2N4920G is available in a Pb-Free package.
  6. What are the typical applications for the 2N4920G transistor?
    The 2N4920G is typically used in driver circuits, switching circuits, and amplifier circuits.
  7. What is the operating and storage junction temperature range for the 2N4920G?
    The operating and storage junction temperature range is -65 to +150 °C.
  8. What is the base-emitter saturation voltage for the 2N4920G?
    The base-emitter saturation voltage (VBE(sat)) is 1.3 Vdc at IC = 1.0 A and IB = 0.1 A.
  9. Is the 2N4920G still recommended for new designs?
    No, the 2N4920G is not recommended for new designs as it has been discontinued. Please contact an onsemi representative for more information.
  10. Where can I find detailed ordering and shipping information for the 2N4920G?
    Detailed ordering and shipping information can be found on the data sheet available on the onsemi website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 1V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
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2N4918
2N4918
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2N4919
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Similar Products

Part Number 2N4920G 2N4923G 2N4922G 2N4921G 2N4920
Manufacturer onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Active Active Active Obsolete Active
Transistor Type PNP NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V 40 V 80 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 40 @ 50mA, 1V
Power - Max 30 W 30 W 30 W 30 W 30 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126

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