Overview
The 2N4920G is a medium-power, high-performance PNP silicon transistor manufactured by onsemi. This device is part of the 2N4918-2N4920 series and is designed for various applications including driver circuits, switching, and amplifier roles. The 2N4920G is known for its excellent power dissipation and safe operating area, making it a reliable choice for a range of electronic systems.
Key Specifications
Characteristic | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 80 | Vdc |
Collector-Base Voltage | VCBO | 80 | Vdc |
Emitter-Base Voltage | VEBO | 5.0 | Vdc |
Collector Current - Continuous | IC | 1.0 A (JEDEC), 3.0 A (actual) | A |
Base Current | IB | 1.0 A | A |
Total Power Dissipation @ TA = 25°C | PD | 30 W | W |
Operating and Storage Junction Temperature Range | TJ, Tstg | -65 to +150 °C | °C |
Thermal Resistance, Junction-to-Case | JC | 4.16 °C/W | °C/W |
Collector-Emitter Saturation Voltage | VCE(sat) | 0.6 Vdc @ IC = 1.0 A, IB = 0.1 A | Vdc |
Base-Emitter Saturation Voltage | VBE(sat) | 1.3 Vdc @ IC = 1.0 A, IB = 0.1 A | Vdc |
Key Features
- Low Saturation Voltage: VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
- Excellent Power Dissipation: PD = 30 W @ TC = 25°C
- Excellent Safe Operating Area
- Gain Specified to IC = 1.0 A
- Complement to NPN 2N4921, 2N4922, 2N4923
- Pb-Free Package Available
Applications
The 2N4920G transistor is suitable for a variety of applications, including:
- Driver Circuits
- Switching Circuits
- Amplifier Circuits
Q & A
- What is the maximum collector-emitter voltage for the 2N4920G transistor?
The maximum collector-emitter voltage (VCEO) for the 2N4920G is 80 Vdc. - What is the maximum collector current for the 2N4920G?
The maximum collector current (IC) is 1.0 A based on JEDEC current gain requirements, and up to 3.0 A based on the actual current-handling capability of the device. - What is the thermal resistance of the 2N4920G?
The thermal resistance, junction-to-case (JC), is 4.16 °C/W. - What is the collector-emitter saturation voltage for the 2N4920G?
The collector-emitter saturation voltage (VCE(sat)) is 0.6 Vdc at IC = 1.0 A and IB = 0.1 A. - Is the 2N4920G available in a Pb-Free package?
Yes, the 2N4920G is available in a Pb-Free package. - What are the typical applications for the 2N4920G transistor?
The 2N4920G is typically used in driver circuits, switching circuits, and amplifier circuits. - What is the operating and storage junction temperature range for the 2N4920G?
The operating and storage junction temperature range is -65 to +150 °C. - What is the base-emitter saturation voltage for the 2N4920G?
The base-emitter saturation voltage (VBE(sat)) is 1.3 Vdc at IC = 1.0 A and IB = 0.1 A. - Is the 2N4920G still recommended for new designs?
No, the 2N4920G is not recommended for new designs as it has been discontinued. Please contact an onsemi representative for more information. - Where can I find detailed ordering and shipping information for the 2N4920G?
Detailed ordering and shipping information can be found on the data sheet available on the onsemi website.