2N4920G
  • Share:

onsemi 2N4920G

Manufacturer No:
2N4920G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS PNP 80V 1A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N4920G is a medium-power, high-performance PNP silicon transistor manufactured by onsemi. This device is part of the 2N4918-2N4920 series and is designed for various applications including driver circuits, switching, and amplifier roles. The 2N4920G is known for its excellent power dissipation and safe operating area, making it a reliable choice for a range of electronic systems.

Key Specifications

CharacteristicSymbolValueUnit
Collector-Emitter VoltageVCEO80Vdc
Collector-Base VoltageVCBO80Vdc
Emitter-Base VoltageVEBO5.0Vdc
Collector Current - ContinuousIC1.0 A (JEDEC), 3.0 A (actual)A
Base CurrentIB1.0 AA
Total Power Dissipation @ TA = 25°CPD30 WW
Operating and Storage Junction Temperature RangeTJ, Tstg-65 to +150 °C°C
Thermal Resistance, Junction-to-CaseJC4.16 °C/W°C/W
Collector-Emitter Saturation VoltageVCE(sat)0.6 Vdc @ IC = 1.0 A, IB = 0.1 AVdc
Base-Emitter Saturation VoltageVBE(sat)1.3 Vdc @ IC = 1.0 A, IB = 0.1 AVdc

Key Features

  • Low Saturation Voltage: VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A
  • Excellent Power Dissipation: PD = 30 W @ TC = 25°C
  • Excellent Safe Operating Area
  • Gain Specified to IC = 1.0 A
  • Complement to NPN 2N4921, 2N4922, 2N4923
  • Pb-Free Package Available

Applications

The 2N4920G transistor is suitable for a variety of applications, including:

  • Driver Circuits
  • Switching Circuits
  • Amplifier Circuits

Q & A

  1. What is the maximum collector-emitter voltage for the 2N4920G transistor?
    The maximum collector-emitter voltage (VCEO) for the 2N4920G is 80 Vdc.
  2. What is the maximum collector current for the 2N4920G?
    The maximum collector current (IC) is 1.0 A based on JEDEC current gain requirements, and up to 3.0 A based on the actual current-handling capability of the device.
  3. What is the thermal resistance of the 2N4920G?
    The thermal resistance, junction-to-case (JC), is 4.16 °C/W.
  4. What is the collector-emitter saturation voltage for the 2N4920G?
    The collector-emitter saturation voltage (VCE(sat)) is 0.6 Vdc at IC = 1.0 A and IB = 0.1 A.
  5. Is the 2N4920G available in a Pb-Free package?
    Yes, the 2N4920G is available in a Pb-Free package.
  6. What are the typical applications for the 2N4920G transistor?
    The 2N4920G is typically used in driver circuits, switching circuits, and amplifier circuits.
  7. What is the operating and storage junction temperature range for the 2N4920G?
    The operating and storage junction temperature range is -65 to +150 °C.
  8. What is the base-emitter saturation voltage for the 2N4920G?
    The base-emitter saturation voltage (VBE(sat)) is 1.3 Vdc at IC = 1.0 A and IB = 0.1 A.
  9. Is the 2N4920G still recommended for new designs?
    No, the 2N4920G is not recommended for new designs as it has been discontinued. Please contact an onsemi representative for more information.
  10. Where can I find detailed ordering and shipping information for the 2N4920G?
    Detailed ordering and shipping information can be found on the data sheet available on the onsemi website.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 1V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
0 Remaining View Similar

In Stock

$0.91
417

Please send RFQ , we will respond immediately.

Same Series
2N4918G
2N4918G
TRANS PNP 40V 1A TO126
2N4919G
2N4919G
TRANS PNP 60V 1A TO126
2N4918
2N4918
TRANS PNP 40V 1A TO126
2N4919
2N4919
TRANS PNP 60V 1A TO126

Similar Products

Part Number 2N4920G 2N4923G 2N4922G 2N4921G 2N4920
Manufacturer onsemi onsemi onsemi onsemi Solid State Inc.
Product Status Active Active Active Obsolete Active
Transistor Type PNP NPN NPN NPN PNP
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 60 V 40 V 80 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 40 @ 50mA, 1V
Power - Max 30 W 30 W 30 W 30 W 30 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126

Related Product By Categories

BC857AMTF
BC857AMTF
Fairchild Semiconductor
TRANS PNP 45V 0.1A SOT23-3
BCP69E6327
BCP69E6327
Infineon Technologies
POWER BIPOLAR TRANSISTOR
BFS20W,115
BFS20W,115
Nexperia USA Inc.
TRANS NPN 20V 0.025A SOT323
2PB709ARW,115
2PB709ARW,115
NXP USA Inc.
NOW NEXPERIA 2PB709ARW - SMALL S
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
BC846B215
BC846B215
NXP USA Inc.
0.1A, 65V, NPN, TO 236AB
BFU910F115
BFU910F115
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
BCP53-10TX
BCP53-10TX
Nexperia USA Inc.
TRANS PNP 80V 1A SOT223
MMBT3904T-7
MMBT3904T-7
Diodes Incorporated
TRANS NPN 40V 0.2A SOT523
BC857CWE6327BTSA1
BC857CWE6327BTSA1
Infineon Technologies
TRANS PNP 45V 0.1A SOT323

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
MMSZ5233BT1G
MMSZ5233BT1G
onsemi
DIODE ZENER 6V 500MW SOD123
NVD5117PLT4G-VF01
NVD5117PLT4G-VF01
onsemi
MOSFET P-CH 60V 11A/61A DPAK
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCS2325DR2G
NCS2325DR2G
onsemi
IC OPAMP ZER-DRIFT 2CIRC 8SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
MC33375ST-3.0T3
MC33375ST-3.0T3
onsemi
IC REG LINEAR 3V 300MA SOT223