2N4923G
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onsemi 2N4923G

Manufacturer No:
2N4923G
Manufacturer:
onsemi
Package:
Bulk
Description:
TRANS NPN 80V 1A TO126
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N4923G is a medium-power plastic NPN silicon transistor produced by ON Semiconductor. This high-performance device is designed for various applications including driver circuits, switching, and amplifier circuits. It is part of the 2N4921G, 2N4922G, and 2N4923G series, each offering different voltage ratings to suit different requirements.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO 80 Vdc
Collector-Base Voltage VCB 80 Vdc
Emitter-Base Voltage VEB 5.0 Vdc
Collector Current - Continuous IC 1.0 Adc
Collector Current - Peak ICM 3.0 Adc
Base Current - Continuous IB 1.0 Adc
Total Power Dissipation @ TC = 25°C PD 30 Watts
Transition Frequency (ft) ft 3.0 MHz
Collector Capacitance (Cc) Cc 100 pF
Forward Current Transfer Ratio (hFE), MIN hFE 30
Maximum Operating Junction Temperature (Tj) Tj 150 °C
Package TO-225 (Pb-Free)

Key Features

  • Low Saturation Voltage: VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A, ensuring efficient operation in various applications.
  • Excellent Power Dissipation: Due to thermopad construction, the device can handle up to 30 watts of power dissipation.
  • Excellent Safe Operating Area: Wide area of safe operation, reducing the risk of device failure under different operating conditions.
  • Complement to PNP Transistors: Complementary to PNP transistors like the 2N4920G, making it versatile for different circuit designs.
  • Pb-Free and RoHS Compliant: The device is lead-free and RoHS compliant, adhering to environmental regulations.

Applications

The 2N4923G transistor is designed for a variety of applications, including:

  • Driver Circuits: Suitable for driving loads in various electronic systems.
  • Switching Applications: Ideal for switching circuits due to its high current and voltage handling capabilities.
  • Can be used in amplifier circuits requiring medium power and high performance.

Q & A

  1. What is the maximum collector-emitter voltage of the 2N4923G transistor?

    The maximum collector-emitter voltage (VCEO) is 80 Vdc.

  2. What is the maximum collector current of the 2N4923G transistor?

    The maximum continuous collector current (IC) is 1.0 Adc, and the peak collector current (ICM) is 3.0 Adc.

  3. What is the transition frequency (ft) of the 2N4923G transistor?

    The transition frequency (ft) is 3.0 MHz.

  4. What is the maximum operating junction temperature of the 2N4923G transistor?

    The maximum operating junction temperature (Tj) is 150°C.

  5. Is the 2N4923G transistor Pb-Free and RoHS compliant?
  6. What is the typical application of the 2N4923G transistor?

    The 2N4923G transistor is typically used in driver circuits, switching applications, and amplifier circuits.

  7. What is the package type of the 2N4923G transistor?

    The 2N4923G transistor comes in a TO-225 (Pb-Free) package.

  8. What is the collector capacitance (Cc) of the 2N4923G transistor?

    The collector capacitance (Cc) is 100 pF.

  9. What is the minimum forward current transfer ratio (hFE) of the 2N4923G transistor?

    The minimum forward current transfer ratio (hFE) is 30.

  10. What is the total power dissipation of the 2N4923G transistor at TC = 25°C?

    The total power dissipation (PD) at TC = 25°C is 30 watts.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:600mV @ 100mA, 1A
Current - Collector Cutoff (Max):500µA
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 500mA, 1V
Power - Max:30 W
Frequency - Transition:3MHz
Operating Temperature:-65°C ~ 150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-225AA, TO-126-3
Supplier Device Package:TO-126
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Same Series
2N4922G
2N4922G
TRANS NPN 60V 1A TO126
2N4921G
2N4921G
TRANS NPN 40V 1A TO126
2N4921
2N4921
TRANS NPN 40V 1A TO126

Similar Products

Part Number 2N4923G 2N4920G 2N4921G 2N4922G 2N4923
Manufacturer onsemi onsemi onsemi onsemi NTE Electronics, Inc
Product Status Active Active Obsolete Active Active
Transistor Type NPN PNP NPN NPN NPN
Current - Collector (Ic) (Max) 1 A 1 A 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 80 V 40 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A 600mV @ 100mA, 1A
Current - Collector Cutoff (Max) 500µA 500µA 500µA 500µA 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V 30 @ 500mA, 1V
Power - Max 30 W 30 W 30 W 30 W 30 W
Frequency - Transition 3MHz 3MHz 3MHz 3MHz 3MHz
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3 TO-225AA, TO-126-3
Supplier Device Package TO-126 TO-126 TO-126 TO-126 TO-126

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