PSMN8R5-100PSFQ
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NXP Semiconductors PSMN8R5-100PSFQ

Manufacturer No:
PSMN8R5-100PSFQ
Manufacturer:
NXP Semiconductors
Package:
Bulk
Description:
NEXPERIA PSMN8R5 - NEXTPOWER 100
Delivery:
Payment:
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Product Introduction

Overview

The PSMN8R5-100PSFQ is a NextPower 100 V standard level gate drive N-channel MOSFET produced by Nexperia, a company that was previously part of NXP Semiconductors. This MOSFET is optimized for high efficiency and fast switching applications. It is qualified to operate at temperatures up to 175 °C, making it suitable for both industrial and consumer applications. The device is available in a TO-220AB package and is RoHS compliant and free from hazardous materials (Ha-free).

Key Specifications

ParameterValue
Type numberPSMN8R5-100PSFQ
PackageTO-220AB (SOT78)
Channel typeN-channel
VDS [max]100 V
RDSon [max] @ VGS = 10 V8.7 mΩ
Tj [max]175 °C
ID [max]98 A
QGD [typ]8.7 nC
QG(tot) [typ] @ VGS = 10 V44.5 nC
Ptot [max]183 W
Qr [typ]70 nC
VGSth [typ]3.1 V
Minimum Operating Temperature-55 °C
Maximum Operating Temperature+175 °C

Key Features

  • Optimized for fast switching, low spiking, and high efficiency.
  • Low QGD and QG(tot) for high efficiency switching applications.
  • Low body diode losses (Qrr) and fast recovery (trr).
  • Strong avalanche energy rating (EAS) and 100% tested for avalanche.
  • RoHS compliant and Ha-free TO-220AB package.

Applications

  • Synchronous rectification in AC-to-DC and DC-to-DC applications.
  • Brushed and BLDC motor control.
  • UPS and solar inverter applications.
  • LED lighting.
  • Battery protection.
  • Full-bridge and half-bridge applications.
  • Flyback and resonant topologies.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the PSMN8R5-100PSFQ?
    The maximum drain-source voltage (VDS) is 100 V.
  2. What is the maximum on-resistance (RDSon) at VGS = 10 V?
    The maximum on-resistance (RDSon) at VGS = 10 V is 8.7 mΩ.
  3. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 175 °C.
  4. What is the continuous drain current (ID)?
    The continuous drain current (ID) is 98 A.
  5. Is the PSMN8R5-100PSFQ RoHS compliant?
    Yes, the PSMN8R5-100PSFQ is RoHS compliant and Ha-free.
  6. What are some typical applications of the PSMN8R5-100PSFQ?
    Typical applications include synchronous rectification, motor control, UPS and solar inverters, LED lighting, battery protection, and full-bridge and half-bridge applications.
  7. What is the package type of the PSMN8R5-100PSFQ?
    The package type is TO-220AB (SOT78).
  8. What is the minimum operating temperature?
    The minimum operating temperature is -55 °C.
  9. What is the maximum power dissipation (Ptot)?
    The maximum power dissipation (Ptot) is 183 W.
  10. Is the PSMN8R5-100PSFQ optimized for fast switching?
    Yes, it is optimized for fast switching, low spiking, and high efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:98A (Ta)
Drive Voltage (Max Rds On, Min Rds On):7V, 10V
Rds On (Max) @ Id, Vgs:8.7mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:44.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:3181 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):183W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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