Overview
The PSMN7R0-30YL115/BKN is a logic level N-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia, formerly part of NXP USA Inc. This MOSFET is designed using TrenchMOS technology and is packaged in the LFPAK56 (SOT669) package. It is known for its high efficiency and reliability, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Value |
|---|---|
| Type Number | PSMN7R0-30YL |
| Package | LFPAK56; Power-SO8 (SOT669) |
| Channel Type | N-channel |
| Number of Transistors | 1 |
| VDS [max] (V) | 30 |
| RDSon [max] @ VGS = 10 V (mΩ) | 7 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 9.1 |
| Tj [max] (°C) | 175 |
| ID [max] (A) | 76 |
| QGD [typ] (nC) | 2.9 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 10 |
| QG(tot) [typ] @ VGS = 10 V (nC) | 22 |
| Ptot [max] (W) | 51 |
| Qr [typ] (nC) | 22 |
| VGSth [typ] (V) | 1.7 |
| Automotive Qualified | No |
| Ciss [typ] (pF) | 1270 |
| Coss [typ] (pF) | 255 |
Key Features
- Logic level N-channel enhancement mode Field-Effect Transistor (FET)
- Utilizes TrenchMOS technology for high efficiency and low on-state resistance
- Packaged in LFPAK56 (SOT669) for compact design and thermal performance
- High current capability with a maximum drain current of 76 A
- Low on-state resistance (RDSon) of 7 mΩ at VGS = 10 V and 9.1 mΩ at VGS = 4.5 V
- High junction temperature rating of up to 175°C
- RoHS compliant and suitable for various industrial and consumer applications
Applications
- Automotive systems: power management, motor control, and battery management
- Industrial applications: power supplies, motor drives, and control systems
- Consumer electronics: power management in laptops, tablets, and smartphones
- Power computing and server systems: efficient power delivery and management
- Wearables and mobile devices: compact and efficient power solutions
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN7R0-30YL?
The maximum drain-source voltage (VDS) is 30 V.
- What is the on-state resistance (RDSon) at VGS = 10 V?
The on-state resistance (RDSon) at VGS = 10 V is 7 mΩ.
- What is the maximum junction temperature (Tj) of this MOSFET?
The maximum junction temperature (Tj) is 175°C.
- Is the PSMN7R0-30YL automotive qualified?
No, the PSMN7R0-30YL is not automotive qualified.
- What is the package type of the PSMN7R0-30YL?
The package type is LFPAK56 (SOT669).
- What is the maximum drain current (ID) of this MOSFET?
The maximum drain current (ID) is 76 A.
- Is the PSMN7R0-30YL RoHS compliant?
Yes, the PSMN7R0-30YL is RoHS compliant.
- What technology is used in the PSMN7R0-30YL MOSFET?
The PSMN7R0-30YL uses TrenchMOS technology.
- What are some common applications of the PSMN7R0-30YL?
Common applications include automotive systems, industrial power supplies, consumer electronics, and power computing systems.
- How can I obtain the datasheet and other technical documents for the PSMN7R0-30YL?
You can download the datasheet and other technical documents from the Nexperia website or through authorized distributors.
