Overview
The PSMN009-100P,127 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP Semiconductors, now part of Nexperia. This device utilizes TrenchMOS technology and is packaged in a TO-220AB configuration. It is designed for high-performance applications requiring efficient power handling and low on-state resistance.
Key Specifications
| Parameter | Value |
|---|---|
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 75 A |
| Pulse Drain Current (Idm) | 375 A |
| Power Dissipation (Ptot) | 230 W |
| Gate-Source Voltage (Vgs) | ±20 V |
| Threshold Voltage (Vth) | 1.5 - 3.5 V |
| On-State Resistance (Rds(on)) | 2.5 mΩ (typical) |
| Package | TO-220AB |
Key Features
- TrenchMOS technology for low on-state resistance and high efficiency.
- High continuous drain current of 75 A.
- High power dissipation capability of 230 W.
- Low threshold voltage range of 1.5 - 3.5 V.
- TO-220AB package for easy mounting and heat dissipation.
Applications
The PSMN009-100P,127 is suitable for a variety of high-power applications, including:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Audio amplifiers and high-power audio systems.
- Industrial and automotive power management systems.
Q & A
- What is the maximum drain-source voltage of the PSMN009-100P,127?
The maximum drain-source voltage is 100 V. - What is the continuous drain current of this FET?
The continuous drain current is 75 A. - What is the typical on-state resistance of the PSMN009-100P,127?
The typical on-state resistance is 2.5 mΩ. - What package type is used for the PSMN009-100P,127?
The package type is TO-220AB. - What is the maximum gate-source voltage?
The maximum gate-source voltage is ±20 V. - What technology is used in this FET?
This FET uses TrenchMOS technology. - What are some common applications for this FET?
Common applications include power supplies, motor control systems, audio amplifiers, and industrial power management systems. - What is the power dissipation capability of the PSMN009-100P,127?
The power dissipation capability is 230 W. - What is the threshold voltage range for this FET?
The threshold voltage range is 1.5 - 3.5 V. - Is the PSMN009-100P,127 suitable for high-power audio systems?
Yes, it is suitable for high-power audio systems due to its high current and power handling capabilities.
