PMV48XP/MI215
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NXP USA Inc. PMV48XP/MI215

Manufacturer No:
PMV48XP/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV48XP/MI215 is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia, formerly part of NXP USA Inc. This MOSFET is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is designed for high-performance applications requiring low on-resistance and fast switching times.

Key Specifications

Parameter Value
Channel Type P-Channel
Maximum Continuous Drain Current 3.5 A
Maximum Drain Source Voltage (Vdss) 20 V
Package Type SOT23 (TO-236AB)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance (Rds On) 55 mΩ @ Vgs = 4.5 V
Channel Mode Enhancement
Maximum Gate Threshold Voltage (Vgs th) 1.25 V
Minimum Gate Threshold Voltage (Vgs th) 0.75 V
Maximum Power Dissipation (Pd) 415 mW
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Typical Gate Charge (Qg) 8.5 nC @ Vgs = 4.5 V
Turn-on Delay Time 11 ns
Turn-off Delay Time 61 ns
Rise Time 13 ns
Fall Time 23 ns

Key Features

  • Logic-level compatible
  • Trench MOSFET technology for low on-resistance and fast switching
  • Very fast switching times
  • Enhancement mode operation
  • Surface Mount SOT23 package for compact design

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Q & A

  1. What is the maximum continuous drain current of the PMV48XP/MI215?

    The maximum continuous drain current is 3.5 A.

  2. What is the maximum drain source voltage (Vdss) of the PMV48XP/MI215?

    The maximum drain source voltage is 20 V.

  3. What package type is the PMV48XP/MI215 available in?

    The PMV48XP/MI215 is available in a SOT23 (TO-236AB) package.

  4. What is the maximum drain source resistance (Rds On) of the PMV48XP/MI215?

    The maximum drain source resistance is 55 mΩ at Vgs = 4.5 V.

  5. What is the operating temperature range of the PMV48XP/MI215?

    The operating temperature range is from -55 °C to +150 °C.

  6. What is the typical gate charge (Qg) of the PMV48XP/MI215?

    The typical gate charge is 8.5 nC at Vgs = 4.5 V.

  7. What are some common applications of the PMV48XP/MI215?

    Common applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  8. Is the PMV48XP/MI215 logic-level compatible?
  9. What technology is used in the PMV48XP/MI215?

    The PMV48XP/MI215 uses Trench MOSFET technology.

  10. What is the maximum power dissipation of the PMV48XP/MI215?

    The maximum power dissipation is 415 mW.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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