PMV32UP/MI215
  • Share:

NXP USA Inc. PMV32UP/MI215

Manufacturer No:
PMV32UP/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This component is designed for high-performance applications requiring low on-state resistance and fast switching times.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (drain-source voltage) Tj = 25 °C - - -20 V
VGS (gate-source voltage) - -8 - 8 V
ID (drain current) VGS = -4.5 V; Tamb = 25 °C - - -4 A
RDSon (drain-source on-state resistance) VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C - 32 36
Tj (junction temperature) - - - 150 °C
VGSth (gate-source threshold voltage) ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V

Key Features

  • 1.8 V drain-source on-state resistance rated
  • Very fast switching
  • Trench MOSFET technology

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Q & A

  1. What is the PMV32UP?

    The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 package.

  2. What is the maximum drain current of the PMV32UP?

    The maximum drain current is -4 A.

  3. What is the maximum junction temperature for the PMV32UP?

    The maximum junction temperature is 150 °C.

  4. What are the typical applications of the PMV32UP?

    Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  5. What is the drain-source on-state resistance of the PMV32UP?

    The drain-source on-state resistance is typically 32 mΩ at VGS = -4.5 V and ID = -2.4 A.

  6. Is the PMV32UP RoHS compliant?
  7. What package type does the PMV32UP use?

    The PMV32UP is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  8. What is the gate-source threshold voltage of the PMV32UP?

    The gate-source threshold voltage is typically -0.7 V.

  9. How fast is the switching time of the PMV32UP?

    The PMV32UP is known for very fast switching times.

  10. What technology is used in the PMV32UP?

    The PMV32UP uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
127

Please send RFQ , we will respond immediately.

Same Series
DD15S20WTS/AA
DD15S20WTS/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S0V50
DD15S2S0V50
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S/AA
DD15S20LV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LV3S
DD15S20LV3S
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20J0S/AA
DD15S20J0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0T2X/AA
DD26S2S0T2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V50/AA
DD26S2S50V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X
DD44S32S60V3X
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

NCV8440ASTT1G
NCV8440ASTT1G
onsemi
MOSFET N-CH 59V 2.6A SOT223
STP20NM50
STP20NM50
STMicroelectronics
MOSFET N-CH 500V 20A TO220AB
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
STL38N65M5
STL38N65M5
STMicroelectronics
MOSFET N-CH 650V PWRFLAT HV
2N7002-TP
2N7002-TP
Micro Commercial Co
MOSFET N-CH 60V 115MA SOT23
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
FDS4465
FDS4465
onsemi
MOSFET P-CH 20V 13.5A 8SOIC
STF5N95K5
STF5N95K5
STMicroelectronics
MOSFET N-CH 950V 3.5A TO220FP
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
MC9S08AC16CFGE
MC9S08AC16CFGE
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 44LQFP
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MC912DG128ACPVE
MC912DG128ACPVE
NXP USA Inc.
IC MCU 16BIT 128KB FLASH 112LQFP
MIMXRT1052DVL6BR
MIMXRT1052DVL6BR
NXP USA Inc.
I.MX RT1050 CROSSOVER PROCESSOR
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
TJA1048T,118
TJA1048T,118
NXP USA Inc.
IC TRANSCEIVER HALF 2/2 14SO
TJA1042TK/3/1,118
TJA1042TK/3/1,118
NXP USA Inc.
HIGH-SPEED CAN TRANSCEIVER WITH
TJA1041T/V,518
TJA1041T/V,518
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 14SO
S912ZVMC25F1MKK557
S912ZVMC25F1MKK557
NXP USA Inc.
MICROCONTROLLER, 16-BIT, HCS12 C