PMV32UP/MI215
  • Share:

NXP USA Inc. PMV32UP/MI215

Manufacturer No:
PMV32UP/MI215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This component is designed for high-performance applications requiring low on-state resistance and fast switching times.

Key Specifications

Parameter Conditions Min Typ Max Unit
VDS (drain-source voltage) Tj = 25 °C - - -20 V
VGS (gate-source voltage) - -8 - 8 V
ID (drain current) VGS = -4.5 V; Tamb = 25 °C - - -4 A
RDSon (drain-source on-state resistance) VGS = -4.5 V; ID = -2.4 A; Tj = 25 °C - 32 36
Tj (junction temperature) - - - 150 °C
VGSth (gate-source threshold voltage) ID = -250 µA; VDS = VGS; Tj = 25 °C -0.45 -0.7 -0.95 V

Key Features

  • 1.8 V drain-source on-state resistance rated
  • Very fast switching
  • Trench MOSFET technology

Applications

  • Relay driver
  • High-speed line driver
  • High-side load switch
  • Switching circuits

Q & A

  1. What is the PMV32UP?

    The PMV32UP is a P-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 package.

  2. What is the maximum drain current of the PMV32UP?

    The maximum drain current is -4 A.

  3. What is the maximum junction temperature for the PMV32UP?

    The maximum junction temperature is 150 °C.

  4. What are the typical applications of the PMV32UP?

    Typical applications include relay drivers, high-speed line drivers, high-side load switches, and switching circuits.

  5. What is the drain-source on-state resistance of the PMV32UP?

    The drain-source on-state resistance is typically 32 mΩ at VGS = -4.5 V and ID = -2.4 A.

  6. Is the PMV32UP RoHS compliant?
  7. What package type does the PMV32UP use?

    The PMV32UP is packaged in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

  8. What is the gate-source threshold voltage of the PMV32UP?

    The gate-source threshold voltage is typically -0.7 V.

  9. How fast is the switching time of the PMV32UP?

    The PMV32UP is known for very fast switching times.

  10. What technology is used in the PMV32UP?

    The PMV32UP uses Trench MOSFET technology.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
127

Please send RFQ , we will respond immediately.

Same Series
DD15S20WT2S/AA
DD15S20WT2S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20LT2S
DD15S20LT2S
CONN D-SUB HD RCPT 15P SLDR CUP
RD15S10HE30/AA
RD15S10HE30/AA
CONN D-SUB RCPT 15POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
CBC46W4S10G00/AA
CBC46W4S10G00/AA
CONN D-SUB RCPT 46POS CRIMP
DD26S10HT0/AA
DD26S10HT0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S10HE20/AA
DD26S10HE20/AA
CONN D-SUB HD RCPT 26POS CRIMP
CBC13W3S10HE3S/AA
CBC13W3S10HE3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S200EX
DD26S200EX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30
DD26S2S50V30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V5X/AA
DD26S2S50V5X/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDMS86255ET150
FDMS86255ET150
onsemi
MOSFET N-CH 150V 10A/63A POWER56
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD18531Q5AT
CSD18531Q5AT
Texas Instruments
MOSFET N-CH 60V 100A 8VSON
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
FCPF1300N80Z
FCPF1300N80Z
onsemi
MOSFET N-CH 800V 4A TO220F
PMCXB900UE147
PMCXB900UE147
NXP USA Inc.
SMALL SIGNAL FET
STH150N10F7-2
STH150N10F7-2
STMicroelectronics
MOSFET N-CH 100V 110A H2PAK-2
FQA11N90-F109
FQA11N90-F109
onsemi
MOSFET N-CH 900V 11.4A TO3PN
FQD2N60CTM
FQD2N60CTM
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 1
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

ADC1004S030TS/C1'1
ADC1004S030TS/C1'1
NXP USA Inc.
IC ADC 10BIT SIGMA-DELTA 28SSOP
LPC1315FBD48,551
LPC1315FBD48,551
NXP USA Inc.
IC MCU 32BIT 32KB FLASH 48LQFP
S9S12G48AMLF
S9S12G48AMLF
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
SPC5745CBK1AMMJ6
SPC5745CBK1AMMJ6
NXP USA Inc.
IC MCU 32BIT 2MB FLSH 256MAPPBGA
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
MCIMX6L2EVN10ABR
MCIMX6L2EVN10ABR
NXP USA Inc.
I.MX 6 SERIES 32-BIT MPU ARM CO
TJA1051T/3/1U
TJA1051T/3/1U
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
74AHC1G66GW-Q100125
74AHC1G66GW-Q100125
NXP USA Inc.
SPST
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN