PMR280UN,115
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NXP USA Inc. PMR280UN,115

Manufacturer No:
PMR280UN,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 20V 980MA SC75
Delivery:
Payment:
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Product Introduction

Overview

The PMR280UN,115 is an N-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc., now part of Nexperia. This device utilizes TrenchMOS technology and is packaged in an ultra-small Surface-Mounted Device (SMD) plastic package, specifically the SOT416 (SC-75) package. Despite being discontinued, it remains notable for its compact footprint and low on-state resistance, making it suitable for various applications requiring efficient switching and low power consumption.

Key Specifications

Parameter Value
Type number PMR280UN
Package version SOT416 (SC-75)
Product status End of life
Channel type N-channel
Number of transistors 1
VDS [max] (V) 20
VGS [max] (V) 8
RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) 340
RDSon [max] @ VGS = 2.5 V (mΩ) 430
Tj [max] (°C) 150
ID [max] (A) 0.98
QGD [typ] (nC) 0.18
QG(tot) [typ] @ VGS = 4.5 V (nC) 0.89
Ptot [max] (W) 0.53
VGSth [typ] (V) 0.7
Automotive qualified No
Ciss [typ] (pF) 45
Coss [typ] (pF) 11
Release date 2011-01-24

Key Features

  • Surface-mounted package (SOT416/SC-75)
  • Low on-state resistance
  • Footprint 63% smaller than SOT23
  • Low threshold voltage

Applications

  • Driver circuits
  • Switching in portable appliances

Q & A

  1. What is the PMR280UN,115?

    The PMR280UN,115 is an N-channel enhancement mode Field-Effect Transistor (FET) using TrenchMOS technology, packaged in a SOT416 (SC-75) package.

  2. What are the key features of the PMR280UN,115?

    Key features include a surface-mounted package, low on-state resistance, a footprint 63% smaller than SOT23, and a low threshold voltage.

  3. What are the typical applications of the PMR280UN,115?

    Typical applications include driver circuits and switching in portable appliances.

  4. What is the maximum drain-source voltage (VDS) for the PMR280UN,115?

    The maximum drain-source voltage (VDS) is 20 V.

  5. What is the maximum drain current (ID) for the PMR280UN,115?

    The maximum drain current (ID) is 0.98 A at 25°C.

  6. Is the PMR280UN,115 automotive qualified?

    No, the PMR280UN,115 is not automotive qualified.

  7. What is the typical gate-source threshold voltage (VGSth) for the PMR280UN,115?

    The typical gate-source threshold voltage (VGSth) is 0.7 V.

  8. What is the maximum junction temperature (Tj) for the PMR280UN,115?

    The maximum junction temperature (Tj) is 150°C.

  9. What is the footprint size of the PMR280UN,115 compared to SOT23?

    The footprint of the PMR280UN,115 is 63% smaller than SOT23.

  10. Is the PMR280UN,115 still in production?

    No, the PMR280UN,115 is discontinued and no longer in production.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:340mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.89 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:45 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):530mW (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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