Overview
The PHK12NQ03LT,518 is a logic level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia, a company that was previously part of NXP Semiconductors. This component utilizes TrenchMOS technology and is packaged in a plastic SO8 (SOT96-1) package. It is designed for use in various applications including computing, communications, consumer, and industrial sectors. Although the product is currently marked as end of life, it remains a significant component in many existing designs due to its performance and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type number | PHK12NQ03LT | - |
| Package version | SOT96-1 | - |
| Channel type | N-channel | - |
| Number of transistors | 1 | - |
| VDS [max] | 30 | V |
| RDSon [max] @ VGS = 10 V | 10.5 | mΩ |
| RDSon [max] @ VGS = 4.5 V; @25°C | 14 | mΩ |
| Tj [max] | 150 | °C |
| QGD [typ] | 4.4 | nC |
| Ptot [max] | 2.5 | W |
| VGS | -20 to +20 | V |
| VGS(th) | 2 | V |
| ID [continuous] | 11.8 | A |
| Minimum Operating Temperature | -55 | °C |
| Maximum Operating Temperature | 150 | °C |
Key Features
- Low Conduction Losses: The PHK12NQ03LT,518 features low on-state resistance, which reduces conduction losses and improves overall efficiency.
- Fast Switching Characteristics: This FET is suitable for high-frequency applications due to its fast switching characteristics, making it ideal for dynamic and high-speed circuits.
- Enhancement Mode Operation: It operates in enhancement mode, which means the channel is normally off and requires a positive gate-source voltage to turn on.
- High Current Capability: With a continuous drain current of 11.8 A, this FET can handle high current requirements in various applications.
Applications
- DC-to-DC Converters: The PHK12NQ03LT,518 is often used in DC-to-DC converter circuits due to its low on-state resistance and fast switching characteristics.
- Portable Equipment: Its high efficiency and reliability make it a good choice for portable equipment where power management is critical.
- Motor Control and Power Supplies: This FET is also used in motor control circuits and other demanding power supply applications due to its robust performance.
Q & A
- What is the maximum drain-source voltage (VDS) of the PHK12NQ03LT,518?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical gate-source threshold voltage (VGS(th)) of this FET?
The typical gate-source threshold voltage (VGS(th)) is 2 V.
- What is the maximum continuous drain current (ID) of the PHK12NQ03LT,518?
The maximum continuous drain current (ID) is 11.8 A.
- What is the maximum junction temperature (Tj) of this component?
The maximum junction temperature (Tj) is 150°C.
- Is the PHK12NQ03LT,518 suitable for high-frequency applications?
Yes, it is suitable for high-frequency applications due to its fast switching characteristics.
- What is the package type of the PHK12NQ03LT,518?
The package type is SO8 (SOT96-1).
- Is the PHK12NQ03LT,518 automotive qualified?
No, it is not automotive qualified.
- What is the typical input capacitance (Ciss) of this FET?
The typical input capacitance (Ciss) is 1335 pF.
- What is the power dissipation (Ptot) of the PHK12NQ03LT,518?
The power dissipation (Ptot) is 2.5 W.
- Is the PHK12NQ03LT,518 moisture sensitive?
Yes, it is moisture sensitive.
- What is the status of the PHK12NQ03LT,518 product?
The product is marked as end of life.
