Overview
The MRFE6S9060NR1 is a high-performance RF power field-effect transistor (FET) designed and manufactured by NXP USA Inc. This device is optimized for broadband commercial and industrial applications, particularly in the frequency range up to 1000 MHz. It is known for its high gain and broadband performance, making it suitable for various RF power amplification needs.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-Source Voltage | VDSS | -0.5, +66 | Vdc |
| Gate-Source Voltage | VGS | -0.5, +12 | Vdc |
| Maximum Operation Voltage | VDD | 32, +0 | Vdc |
| Storage Temperature Range | Tstg | -65 to +150 | °C |
| Case Operating Temperature | TC | 150 | °C |
| Operating Junction Temperature | TJ | 225 | °C |
| Thermal Resistance, Junction to Case | RθJC | 0.77 | °C/W |
| Power Gain | Gps | 20 - 23 | dB |
| Drain Efficiency | ηD | 30.5 - 33 | % |
| Adjacent Channel Power Ratio | ACPR | -45.7 - -44 | dBc |
| Input Return Loss | IRL | -18 - -9 | dB |
Key Features
- High gain and broadband performance up to 1000 MHz.
- Integrated ESD protection for enhanced reliability.
- 225°C capable plastic package, ensuring high-temperature operation.
- RoHS compliant, adhering to environmental standards.
- Available in tape and reel packaging (R1 suffix = 500 units per 24 mm, 13 inch reel).
- High drain efficiency and power gain, making it suitable for high-power RF applications.
Applications
- Broadband commercial and industrial RF power amplification.
- N-CDMA and GSM EDGE systems.
- Wireless communication infrastructure.
- Base stations and repeaters.
- Industrial RF heating and plasma applications.
Q & A
- What is the maximum drain-source voltage for the MRFE6S9060NR1?
The maximum drain-source voltage (VDSS) is +66 Vdc.
- What is the operating junction temperature of the MRFE6S9060NR1?
The operating junction temperature (TJ) is 225°C.
- What is the typical power gain of the MRFE6S9060NR1?
The typical power gain (Gps) ranges from 20 to 23 dB.
- Is the MRFE6S9060NR1 RoHS compliant?
- What are the common applications of the MRFE6S9060NR1?
- What is the thermal resistance, junction to case, for the MRFE6S9060NR1?
The thermal resistance, junction to case (RθJC), is approximately 0.77 °C/W.
- Does the MRFE6S9060NR1 have integrated ESD protection?
- What is the storage temperature range for the MRFE6S9060NR1?
- What is the typical drain efficiency of the MRFE6S9060NR1?
- How is the MRFE6S9060NR1 packaged?
