BUK9C10-55BIT/A,11
  • Share:

NXP USA Inc. BUK9C10-55BIT/A,11

Manufacturer No:
BUK9C10-55BIT/A,11
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 55V 75A D2PAK-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9C10-55BIT/A,11 is an N-channel TrenchPLUS logic level MOSFET manufactured by Nexperia. This device is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It features TrenchPLUS MOSFET technology and is packaged in a D2PAK-7 (SOT427) package.

Key Specifications

ParameterValue
Type numberBUK9C10-55BIT
Package versionSOT427
Package nameD2PAK-7
Product statusEnd of life
Channel typeN
Nr of transistors1
V DS [max] (V)55
R DSon [max] @ V GS = 10 V (mΩ)9
R DSon [max] @ V GS = 5 V (mΩ)10
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ)15
T j [max] (°C)175
I D [max] (A)75
Q GD [typ] (nC)17
P tot [max] (W)194
Q r [typ] (nC)122
V GSth [typ] (V)1.5
Automotive qualifiedYes
C iss [typ] (pF)3500
C oss [typ] (pF)526.7
Release date2010-10-21

Key Features

  • AEC-Q101 Compliant: Ensures the device meets stringent automotive standards.
  • Integrated Temperature Sensor: Enables temperature monitoring.
  • Integrated Current Sense FET: Allows for current sense measurement.
  • Suitable for Thermally Demanding Environments: Rated up to 175 °C.

Applications

  • 12 V Automotive Systems: Suitable for various automotive applications.
  • Motors, Lamps, and Solenoid Control: Used in controlling motors, lamps, and solenoids.
  • Powertrain, Chassis, and Body Applications: Applicable in powertrain, chassis, and body systems of vehicles.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK9C10-55BIT/A,11?
    The maximum drain-source voltage (V DS) is 55 V.
  2. What is the maximum on-resistance (R DSon) at V GS = 10 V?
    The maximum on-resistance (R DSon) at V GS = 10 V is 9 mΩ.
  3. Is the BUK9C10-55BIT/A,11 automotive qualified?
    Yes, it is AEC-Q101 compliant.
  4. What is the maximum junction temperature (T j) of the device?
    The maximum junction temperature (T j) is 175 °C.
  5. What is the maximum continuous drain current (I D) of the device?
    The maximum continuous drain current (I D) is 75 A.
  6. Does the device include integrated temperature sensing?
    Yes, it includes an integrated temperature sensor.
  7. What package type is the BUK9C10-55BIT/A,11 available in?
    The device is packaged in a D2PAK-7 (SOT427) package.
  8. Is the BUK9C10-55BIT/A,11 still in production?
    No, the product is marked as end of life.
  9. What are some typical applications of the BUK9C10-55BIT/A,11?
    Typical applications include 12 V automotive systems, motors, lamps, and solenoid control, as well as powertrain, chassis, and body applications.
  10. Does the device support current sense measurement?
    Yes, it includes an integrated current sense FET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4667 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$0.66
1,148

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FDN357N
FDN357N
onsemi
MOSFET N-CH 30V 1.9A SUPERSOT3
FCH040N65S3-F155
FCH040N65S3-F155
onsemi
MOSFET N-CH 650V 65A TO247-3
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
2N7002BKM,315
2N7002BKM,315
Nexperia USA Inc.
MOSFET N-CH 60V 450MA DFN1006-3
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
PMZB290UN/FYL
PMZB290UN/FYL
NXP USA Inc.
PMZB290UN/FYL

Related Product By Brand

BAV99/LF1R
BAV99/LF1R
NXP USA Inc.
DIODE SWITCHING TO-236AB
PMEG4030ER115
PMEG4030ER115
NXP USA Inc.
NOW NEXPERIA PMEG4030ER RECTIFIE
Z0103MA0,412
Z0103MA0,412
NXP USA Inc.
NOW WEEN - Z0103MA0 - 4 QUADRANT
SAF4000EL/101S500Y
SAF4000EL/101S500Y
NXP USA Inc.
SOFTWARE DEFINED RADIO
MKE02Z64VLH4
MKE02Z64VLH4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 64LQFP
P89LPC938FDH,529
P89LPC938FDH,529
NXP USA Inc.
IC MCU 8BIT 8KB FLASH 28TSSOP
TJA1042T/3,118
TJA1042T/3,118
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TJA1041T/V,518
TJA1041T/V,518
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 14SO
74LVC1G17GV-Q100125
74LVC1G17GV-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
MWCT1013VLHSTR
MWCT1013VLHSTR
NXP USA Inc.
32BIT256K FLASHSTR CTM
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
SLRC40001T/OFE,112
SLRC40001T/OFE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO