BUK9C10-55BIT/A,11
  • Share:

NXP USA Inc. BUK9C10-55BIT/A,11

Manufacturer No:
BUK9C10-55BIT/A,11
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 55V 75A D2PAK-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9C10-55BIT/A,11 is an N-channel TrenchPLUS logic level MOSFET manufactured by Nexperia. This device is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It features TrenchPLUS MOSFET technology and is packaged in a D2PAK-7 (SOT427) package.

Key Specifications

ParameterValue
Type numberBUK9C10-55BIT
Package versionSOT427
Package nameD2PAK-7
Product statusEnd of life
Channel typeN
Nr of transistors1
V DS [max] (V)55
R DSon [max] @ V GS = 10 V (mΩ)9
R DSon [max] @ V GS = 5 V (mΩ)10
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ)15
T j [max] (°C)175
I D [max] (A)75
Q GD [typ] (nC)17
P tot [max] (W)194
Q r [typ] (nC)122
V GSth [typ] (V)1.5
Automotive qualifiedYes
C iss [typ] (pF)3500
C oss [typ] (pF)526.7
Release date2010-10-21

Key Features

  • AEC-Q101 Compliant: Ensures the device meets stringent automotive standards.
  • Integrated Temperature Sensor: Enables temperature monitoring.
  • Integrated Current Sense FET: Allows for current sense measurement.
  • Suitable for Thermally Demanding Environments: Rated up to 175 °C.

Applications

  • 12 V Automotive Systems: Suitable for various automotive applications.
  • Motors, Lamps, and Solenoid Control: Used in controlling motors, lamps, and solenoids.
  • Powertrain, Chassis, and Body Applications: Applicable in powertrain, chassis, and body systems of vehicles.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK9C10-55BIT/A,11?
    The maximum drain-source voltage (V DS) is 55 V.
  2. What is the maximum on-resistance (R DSon) at V GS = 10 V?
    The maximum on-resistance (R DSon) at V GS = 10 V is 9 mΩ.
  3. Is the BUK9C10-55BIT/A,11 automotive qualified?
    Yes, it is AEC-Q101 compliant.
  4. What is the maximum junction temperature (T j) of the device?
    The maximum junction temperature (T j) is 175 °C.
  5. What is the maximum continuous drain current (I D) of the device?
    The maximum continuous drain current (I D) is 75 A.
  6. Does the device include integrated temperature sensing?
    Yes, it includes an integrated temperature sensor.
  7. What package type is the BUK9C10-55BIT/A,11 available in?
    The device is packaged in a D2PAK-7 (SOT427) package.
  8. Is the BUK9C10-55BIT/A,11 still in production?
    No, the product is marked as end of life.
  9. What are some typical applications of the BUK9C10-55BIT/A,11?
    Typical applications include 12 V automotive systems, motors, lamps, and solenoid control, as well as powertrain, chassis, and body applications.
  10. Does the device support current sense measurement?
    Yes, it includes an integrated current sense FET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4667 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$0.66
1,148

Please send RFQ , we will respond immediately.

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
FDMA430NZ
FDMA430NZ
onsemi
MOSFET N-CH 30V 5A 6MICROFET
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
CSD17318Q2
CSD17318Q2
Texas Instruments
MOSFET N-CH 30V 25A 6WSON
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
FDN336P-NL
FDN336P-NL
onsemi
MOSFET P-CH 20V 1.3A SUPERSOT3
FQB34P10TM-F085
FQB34P10TM-F085
onsemi
MOSFET P-CH 100V 33.5A D2PAK
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
AFT09MS007NT1
AFT09MS007NT1
NXP USA Inc.
FET RF 30V 870MHZ PLD1.5W
PMV45EN,215
PMV45EN,215
NXP USA Inc.
MOSFET N-CH 30V 5.4A TO236AB
S9S12G48F0MLFR
S9S12G48F0MLFR
NXP USA Inc.
IC MCU 16BIT 48KB FLASH 48LQFP
MK10DX256VLK7R
MK10DX256VLK7R
NXP USA Inc.
IC MCU 32BIT 256KB FLASH 80FQFP
74LVC1G126GW/AU125
74LVC1G126GW/AU125
NXP USA Inc.
BUS DRIVER, LVC/LCX/Z SERIES
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
SPC5607BF1MLU6557
SPC5607BF1MLU6557
NXP USA Inc.
MICROCONTROLLER 32-BIT, POWER AR
SA614AD,602
SA614AD,602
NXP USA Inc.
IC FM IF SYSTEM LOW PWR 16-SOIC
PN5120A0HN1/C1,118
PN5120A0HN1/C1,118
NXP USA Inc.
IC RFID RDR/TRAN 13.56MZ 32HVQFN