BUK9C10-55BIT/A,11
  • Share:

NXP USA Inc. BUK9C10-55BIT/A,11

Manufacturer No:
BUK9C10-55BIT/A,11
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 55V 75A D2PAK-7
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK9C10-55BIT/A,11 is an N-channel TrenchPLUS logic level MOSFET manufactured by Nexperia. This device is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It features TrenchPLUS MOSFET technology and is packaged in a D2PAK-7 (SOT427) package.

Key Specifications

ParameterValue
Type numberBUK9C10-55BIT
Package versionSOT427
Package nameD2PAK-7
Product statusEnd of life
Channel typeN
Nr of transistors1
V DS [max] (V)55
R DSon [max] @ V GS = 10 V (mΩ)9
R DSon [max] @ V GS = 5 V (mΩ)10
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ)15
T j [max] (°C)175
I D [max] (A)75
Q GD [typ] (nC)17
P tot [max] (W)194
Q r [typ] (nC)122
V GSth [typ] (V)1.5
Automotive qualifiedYes
C iss [typ] (pF)3500
C oss [typ] (pF)526.7
Release date2010-10-21

Key Features

  • AEC-Q101 Compliant: Ensures the device meets stringent automotive standards.
  • Integrated Temperature Sensor: Enables temperature monitoring.
  • Integrated Current Sense FET: Allows for current sense measurement.
  • Suitable for Thermally Demanding Environments: Rated up to 175 °C.

Applications

  • 12 V Automotive Systems: Suitable for various automotive applications.
  • Motors, Lamps, and Solenoid Control: Used in controlling motors, lamps, and solenoids.
  • Powertrain, Chassis, and Body Applications: Applicable in powertrain, chassis, and body systems of vehicles.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK9C10-55BIT/A,11?
    The maximum drain-source voltage (V DS) is 55 V.
  2. What is the maximum on-resistance (R DSon) at V GS = 10 V?
    The maximum on-resistance (R DSon) at V GS = 10 V is 9 mΩ.
  3. Is the BUK9C10-55BIT/A,11 automotive qualified?
    Yes, it is AEC-Q101 compliant.
  4. What is the maximum junction temperature (T j) of the device?
    The maximum junction temperature (T j) is 175 °C.
  5. What is the maximum continuous drain current (I D) of the device?
    The maximum continuous drain current (I D) is 75 A.
  6. Does the device include integrated temperature sensing?
    Yes, it includes an integrated temperature sensor.
  7. What package type is the BUK9C10-55BIT/A,11 available in?
    The device is packaged in a D2PAK-7 (SOT427) package.
  8. Is the BUK9C10-55BIT/A,11 still in production?
    No, the product is marked as end of life.
  9. What are some typical applications of the BUK9C10-55BIT/A,11?
    Typical applications include 12 V automotive systems, motors, lamps, and solenoid control, as well as powertrain, chassis, and body applications.
  10. Does the device support current sense measurement?
    Yes, it includes an integrated current sense FET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4667 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
0 Remaining View Similar

In Stock

$0.66
1,148

Please send RFQ , we will respond immediately.

Related Product By Categories

IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
NTMFS5H409NLT3G
NTMFS5H409NLT3G
onsemi
MOSFET N-CH 40V 41A/270A 5DFN
STW48NM60N
STW48NM60N
STMicroelectronics
MOSFET N-CH 600V 44A TO247
BUK9880-55A,115
BUK9880-55A,115
NXP USA Inc.
MOSFET N-CH 55V 7A SOT223
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

FRDM-K64F-AGM04
FRDM-K64F-AGM04
NXP USA Inc.
KIT CONTAINING THE FRDM-K64F AND
SAA7706H/N210,518
SAA7706H/N210,518
NXP USA Inc.
IC CAR RADIO DSP 80-QFP
MC9S08PL4CTG
MC9S08PL4CTG
NXP USA Inc.
IC MCU 8BIT 4KB FLASH 16TSSOP
74HCT4053PW-Q100118
74HCT4053PW-Q100118
NXP USA Inc.
SINGLE-ENDED MUX,TSSOP16
TJA1028T/3V3/10:11
TJA1028T/3V3/10:11
NXP USA Inc.
IC TRANSCEIVER HALF 1/1 8SO
TDA7052BT/N1,112
TDA7052BT/N1,112
NXP USA Inc.
IC AMP CLASS AB MONO 550MW 8SO
74LV08D/C4118
74LV08D/C4118
NXP USA Inc.
AND GATE, LV/LV-A/LVX/H SERIES
74AHC595PW/AUJ
74AHC595PW/AUJ
NXP USA Inc.
IC SHIFT REGISTER 8BIT 16-TSSOP
74HC139D-Q100118
74HC139D-Q100118
NXP USA Inc.
DECODER/DRIVER, HC/UH SERIES
TEA18363T/2J
TEA18363T/2J
NXP USA Inc.
IC OFFLINE SWITCH FLYBACK 8SO
BZX84J-C30115
BZX84J-C30115
NXP USA Inc.
NOW NEXPERIA BZX84J-C2V7 - ZENER
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA