BUK9C10-55BIT/A,11
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NXP USA Inc. BUK9C10-55BIT/A,11

Manufacturer No:
BUK9C10-55BIT/A,11
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 55V 75A D2PAK-7
Delivery:
Payment:
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Product Introduction

Overview

The BUK9C10-55BIT/A,11 is an N-channel TrenchPLUS logic level MOSFET manufactured by Nexperia. This device is designed and qualified to the AEC-Q101 standard, making it suitable for high-performance automotive applications. It features TrenchPLUS MOSFET technology and is packaged in a D2PAK-7 (SOT427) package.

Key Specifications

ParameterValue
Type numberBUK9C10-55BIT
Package versionSOT427
Package nameD2PAK-7
Product statusEnd of life
Channel typeN
Nr of transistors1
V DS [max] (V)55
R DSon [max] @ V GS = 10 V (mΩ)9
R DSon [max] @ V GS = 5 V (mΩ)10
R DSon [max] @ V GS = 4.5 V; @25 C (mΩ)15
T j [max] (°C)175
I D [max] (A)75
Q GD [typ] (nC)17
P tot [max] (W)194
Q r [typ] (nC)122
V GSth [typ] (V)1.5
Automotive qualifiedYes
C iss [typ] (pF)3500
C oss [typ] (pF)526.7
Release date2010-10-21

Key Features

  • AEC-Q101 Compliant: Ensures the device meets stringent automotive standards.
  • Integrated Temperature Sensor: Enables temperature monitoring.
  • Integrated Current Sense FET: Allows for current sense measurement.
  • Suitable for Thermally Demanding Environments: Rated up to 175 °C.

Applications

  • 12 V Automotive Systems: Suitable for various automotive applications.
  • Motors, Lamps, and Solenoid Control: Used in controlling motors, lamps, and solenoids.
  • Powertrain, Chassis, and Body Applications: Applicable in powertrain, chassis, and body systems of vehicles.

Q & A

  1. What is the maximum drain-source voltage (V DS) of the BUK9C10-55BIT/A,11?
    The maximum drain-source voltage (V DS) is 55 V.
  2. What is the maximum on-resistance (R DSon) at V GS = 10 V?
    The maximum on-resistance (R DSon) at V GS = 10 V is 9 mΩ.
  3. Is the BUK9C10-55BIT/A,11 automotive qualified?
    Yes, it is AEC-Q101 compliant.
  4. What is the maximum junction temperature (T j) of the device?
    The maximum junction temperature (T j) is 175 °C.
  5. What is the maximum continuous drain current (I D) of the device?
    The maximum continuous drain current (I D) is 75 A.
  6. Does the device include integrated temperature sensing?
    Yes, it includes an integrated temperature sensor.
  7. What package type is the BUK9C10-55BIT/A,11 available in?
    The device is packaged in a D2PAK-7 (SOT427) package.
  8. Is the BUK9C10-55BIT/A,11 still in production?
    No, the product is marked as end of life.
  9. What are some typical applications of the BUK9C10-55BIT/A,11?
    Typical applications include 12 V automotive systems, motors, lamps, and solenoid control, as well as powertrain, chassis, and body applications.
  10. Does the device support current sense measurement?
    Yes, it includes an integrated current sense FET.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:51 nC @ 5 V
Vgs (Max):±15V
Input Capacitance (Ciss) (Max) @ Vds:4667 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):194W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK-7
Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
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