Overview
The BUK7Y22-100E115 is a standard level N-channel MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS technology family and is packaged in the LFPAK56 (Power SO8) package. It has been designed and qualified to the AEC Q101 standard, ensuring high reliability and performance in automotive and industrial applications.
Key Specifications
| Parameter | Value |
|---|---|
| VDS (Max) | 100 V |
| RDS(on) (Max) @ VGS = 10 V | 22 mΩ |
| RDS(on) (Max) @ VGS = 4.5 V | - |
| ID (Max) | 100 A |
| QG(tot) (Typ) | - |
| Package | LFPAK56 (Power SO8) |
| Qualification Standard | AEC Q101 |
Key Features
- Standard level N-channel MOSFET using TrenchMOS technology.
- Low on-state resistance (RDS(on)) for high efficiency and low thermal losses.
- High current capability up to 100 A.
- Wide safe operating area (SOA) for reliable current management.
- Copper clip technology for low inductance and high current transient robustness.
- Exposed leads for easy optical inspection.
Applications
- Automotive systems, including motor control and power supplies.
- Industrial power supplies and DC-DC converters.
- High-performance computing, such as point-of-load and Vcore applications.
- Power-over-Ethernet (PoE) and other high-current applications.
- Power tools, medical devices, and remote control vehicles.
Q & A
- What is the maximum drain-source voltage (VDS) of the BUK7Y22-100E115?
The maximum drain-source voltage (VDS) is 100 V. - What is the on-state resistance (RDS(on)) at VGS = 10 V?
The on-state resistance (RDS(on)) at VGS = 10 V is 22 mΩ. - What is the maximum drain current (ID)?
The maximum drain current (ID) is 100 A. - What package type is used for the BUK7Y22-100E115?
The package type is LFPAK56 (Power SO8). - What qualification standard does the BUK7Y22-100E115 meet?
The BUK7Y22-100E115 meets the AEC Q101 standard. - What technology is used in the BUK7Y22-100E115?
The BUK7Y22-100E115 uses TrenchMOS technology. - What are some typical applications of the BUK7Y22-100E115?
Typical applications include automotive systems, industrial power supplies, high-performance computing, and power-over-Ethernet (PoE). - What are the benefits of the copper clip technology used in this MOSFET?
The copper clip technology provides low inductance, high current transient robustness, and improved reliability. - Is the BUK7Y22-100E115 suitable for high-current transient applications?
Yes, it is suitable for high-current transient applications due to its high current transient robustness. - Can the BUK7Y22-100E115 be used in automotive applications?
Yes, it is designed and qualified for automotive applications and meets the AEC Q101 standard.
