English
BUK7510-55AL127
  • Share:

NXP USA Inc. BUK7510-55AL127

Manufacturer No:
BUK7510-55AL127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BUK7510-55AL127 is an N-channel TrenchMOS standard level MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS family, known for its high performance and reliability. The BUK7510-55AL127 is designed to operate at high currents and voltages, making it suitable for a variety of power management and switching applications.

Key Specifications

GS = 10 V
ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)122 A
RDS(on) (On-State Drain-Source Resistance)
VGS(th) (Gate-Source Threshold Voltage)
PD (Power Dissipation)
Package

Key Features

  • High current capability of up to 122 A.
  • Low on-state resistance (RDS(on)) of typically 1.5 mΩ.
  • Standard level gate drive, compatible with most microcontrollers and logic circuits.
  • High efficiency due to low switching losses.
  • Robust and reliable TrenchMOS technology.

Applications

  • Power management in industrial and automotive systems.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • High-power DC-DC converters.
  • General-purpose power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK7510-55AL127?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 122 A.
  3. What is the typical on-state drain-source resistance?
    The typical on-state drain-source resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V.
  4. What is the gate-source threshold voltage?
    The gate-source threshold voltage (VGS(th)) is typically 2.5 V.
  5. In what package is the BUK7510-55AL127 available?
    The BUK7510-55AL127 is available in a TO-220-3 package.
  6. Is this MOSFET suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high current and low on-state resistance.
  7. What are some common applications of this MOSFET?
    Common applications include power management in industrial and automotive systems, switch-mode power supplies, motor control, and high-power DC-DC converters.
  8. Is the BUK7510-55AL127 still in production?
    No, this product is no longer manufactured.
  9. What technology is used in this MOSFET?
    The BUK7510-55AL127 uses TrenchMOS technology.
  10. Why is TrenchMOS technology beneficial?
    TrenchMOS technology offers high efficiency, low switching losses, and robust reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$1.01
222

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
CBC46W4S10G0X/AA
CBC46W4S10G0X/AA
CONN D-SUB RCPT 46POS CRIMP
DD44S320000
DD44S320000
CONN D-SUB HD RCPT 44P VERT SLDR
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20JT2S
DD15S20JT2S
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HE2Z/AA
DD26M20HE2Z/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E2X/AA
DD26S200E2X/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T20/AA
DD26S2S50T20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S10HE0/AA
DD26S10HE0/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD44S32S600X
DD44S32S600X
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WTX
DD26S20WTX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number BUK7510-55AL127 BUK7510-55AL,127
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6280 pF @ 25 V 6280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

Related Product By Categories

FQD4P25TM-WS
FQD4P25TM-WS
onsemi
MOSFET P-CH 250V 3.1A DPAK
IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
NVR5124PLT1G
NVR5124PLT1G
onsemi
MOSFET P-CH 60V 1.1A SOT23-3
MVGSF1N02LT1G
MVGSF1N02LT1G
onsemi
MOSFET N-CH 20V 750MA SOT23-3
FQD19N10LTM
FQD19N10LTM
onsemi
MOSFET N-CH 100V 15.6A DPAK
NTMFS5C468NLT1G
NTMFS5C468NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STL9N60M2
STL9N60M2
STMicroelectronics
MOSFET N-CH 600V 4.8A PWRFLAT56
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP
STD7N52DK3
STD7N52DK3
STMicroelectronics
MOSFET N-CH 525V 6A DPAK
NTNS3A65PZT5G
NTNS3A65PZT5G
onsemi
MOSFET P-CH 20V 281MA SOT883

Related Product By Brand

PMBD914/DG215
PMBD914/DG215
NXP USA Inc.
PMBD914 - RECTIFIER DIODE
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
MKL26Z128VLH4
MKL26Z128VLH4
NXP USA Inc.
IC MCU 32BIT 128KB FLASH 64LQFP
LPC2294HBD144/01,5
LPC2294HBD144/01,5
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
LS1043AXE8QQB
LS1043AXE8QQB
NXP USA Inc.
QORIQ 4XCPU 64-BIT ARM ARCH 1.
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
74LVC07APW/S505118
74LVC07APW/S505118
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC32PW/AUJ
74HC32PW/AUJ
NXP USA Inc.
IC GATE OR 4CH 2-INP 14TSSOP
MC33FS4500CAER2
MC33FS4500CAER2
NXP USA Inc.
SYSTEM BASIS CHIP LINEAR 0.5A V
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
MKW36A512VFP4
MKW36A512VFP4
NXP USA Inc.
KINETIS W 32-BIT MCU ARM CORTEX-