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BUK7510-55AL127
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NXP USA Inc. BUK7510-55AL127

Manufacturer No:
BUK7510-55AL127
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
N-CHANNEL POWER MOSFET
Delivery:
Payment:
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Product Introduction

Overview

The BUK7510-55AL127 is an N-channel TrenchMOS standard level MOSFET produced by NXP USA Inc. This device is part of NXP's TrenchMOS family, known for its high performance and reliability. The BUK7510-55AL127 is designed to operate at high currents and voltages, making it suitable for a variety of power management and switching applications.

Key Specifications

GS = 10 V
ParameterValue
VDS (Drain-Source Voltage)55 V
ID (Continuous Drain Current)122 A
RDS(on) (On-State Drain-Source Resistance)
VGS(th) (Gate-Source Threshold Voltage)
PD (Power Dissipation)
Package

Key Features

  • High current capability of up to 122 A.
  • Low on-state resistance (RDS(on)) of typically 1.5 mΩ.
  • Standard level gate drive, compatible with most microcontrollers and logic circuits.
  • High efficiency due to low switching losses.
  • Robust and reliable TrenchMOS technology.

Applications

  • Power management in industrial and automotive systems.
  • Switch-mode power supplies (SMPS).
  • Motor control and drive systems.
  • High-power DC-DC converters.
  • General-purpose power switching applications.

Q & A

  1. What is the maximum drain-source voltage of the BUK7510-55AL127?
    The maximum drain-source voltage (VDS) is 55 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 122 A.
  3. What is the typical on-state drain-source resistance?
    The typical on-state drain-source resistance (RDS(on)) is 1.5 mΩ at VGS = 10 V.
  4. What is the gate-source threshold voltage?
    The gate-source threshold voltage (VGS(th)) is typically 2.5 V.
  5. In what package is the BUK7510-55AL127 available?
    The BUK7510-55AL127 is available in a TO-220-3 package.
  6. Is this MOSFET suitable for high-power applications?
    Yes, it is suitable for high-power applications due to its high current and low on-state resistance.
  7. What are some common applications of this MOSFET?
    Common applications include power management in industrial and automotive systems, switch-mode power supplies, motor control, and high-power DC-DC converters.
  8. Is the BUK7510-55AL127 still in production?
    No, this product is no longer manufactured.
  9. What technology is used in this MOSFET?
    The BUK7510-55AL127 uses TrenchMOS technology.
  10. Why is TrenchMOS technology beneficial?
    TrenchMOS technology offers high efficiency, low switching losses, and robust reliability.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):55 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:124 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6280 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number BUK7510-55AL127 BUK7510-55AL,127
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V 55 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 10mOhm @ 25A, 10V 10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 124 nC @ 10 V 124 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6280 pF @ 25 V 6280 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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