BSS84AK-B215
  • Share:

NXP USA Inc. BSS84AK-B215

Manufacturer No:
BSS84AK-B215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AK is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This component is designed for a variety of applications requiring low on-state resistance and high switching speeds.

Key Specifications

ParameterValue
Type numberBSS84AK
PackageSOT23
Channel typeP-channel
VDS [max]-50 V
RDSon [max] @ VGS = 10 V7500 mΩ
RDSon [max] @ VGS = 5 V8500 mΩ
Tj [max]150 °C
ID [max]-0.18 A
QGD [typ]0.09 nC
Ptot [max]0.42 W
VGSth [typ]-1.6 V
Automotive qualifiedYes
Ciss [typ]24 pF
Coss [typ]4.5 pF

Key Features

  • Low on-state resistance (RDSon) for efficient switching.
  • High switching speeds due to Trench MOSFET technology.
  • Compact SOT23 package suitable for space-constrained designs.
  • Automotive qualified, ensuring reliability in demanding automotive applications.
  • Low gate threshold voltage (VGSth) for easy control.

Applications

The BSS84AK is versatile and can be used in various applications across different industries, including:

  • Automotive systems for power management and control.
  • Industrial control systems requiring high reliability and efficiency.
  • Consumer electronics for power switching and voltage regulation.
  • Mobile and wearable devices where space and power efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS84AK?
    The maximum drain-source voltage (VDS) is -50 V.
  2. What is the package type of the BSS84AK?
    The BSS84AK is housed in a SOT23 (TO-236AB) package.
  3. What is the maximum on-state resistance (RDSon) at VGS = 10 V?
    The maximum on-state resistance (RDSon) at VGS = 10 V is 7500 mΩ.
  4. Is the BSS84AK automotive qualified?
    Yes, the BSS84AK is automotive qualified.
  5. What is the typical gate threshold voltage (VGSth)?
    The typical gate threshold voltage (VGSth) is -1.6 V.
  6. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 150 °C.
  7. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is -0.18 A.
  8. What is the typical gate-drain charge (QGD)?
    The typical gate-drain charge (QGD) is 0.09 nC.
  9. What is the maximum total power dissipation (Ptot)?
    The maximum total power dissipation (Ptot) is 0.42 W.
  10. What are the typical input and output capacitances (Ciss and Coss)?
    The typical input capacitance (Ciss) is 24 pF, and the typical output capacitance (Coss) is 4.5 pF.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
424

Please send RFQ , we will respond immediately.

Same Series
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD15S20Z0X
DD15S20Z0X
CONN D-SUB HD RCPT 15P SLDR CUP
CBC13W3S10H00/AA
CBC13W3S10H00/AA
CONN D-SUB RCPT 13POS CRIMP
CBC13W3S10HE2X/AA
CBC13W3S10HE2X/AA
CONN D-SUB RCPT 13POS CRIMP
DD15S200V5S
DD15S200V5S
CONN D-SUB HD RCPT 15P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
DD15S20JV3S/AA
DD15S20JV3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26S10HE2X/AA
DD26S10HE2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26S2S0V50
DD26S2S0V50
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T2X
DD26S2S50T2X
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S3200T20
DD44S3200T20
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STF13N80K5
STF13N80K5
STMicroelectronics
MOSFET N-CH 800V 12A TO220FP
BUK9M85-60EX
BUK9M85-60EX
Nexperia USA Inc.
MOSFET N-CH 60V 12.8A LFPAK33
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP11NK40Z
STP11NK40Z
STMicroelectronics
MOSFET N-CH 400V 9A TO220AB
STV270N4F3
STV270N4F3
STMicroelectronics
MOSFET N-CH 40V 270A 10POWERSO
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
STF38N65M5
STF38N65M5
STMicroelectronics
MOSFET N-CH 650V 30A TO220FP

Related Product By Brand

PMEG2005EGW115
PMEG2005EGW115
NXP USA Inc.
NOW NEXPERIA PMEG2005EGW RECTIFI
PDZ24B/ZLX
PDZ24B/ZLX
NXP USA Inc.
DIODE ZENER SOD323
BFU520VL
BFU520VL
NXP USA Inc.
RF TRANS NPN 12V 10.5GHZ SOT143B
BF1202WR,115
BF1202WR,115
NXP USA Inc.
MOSFET 2N-CH 10V 30MA SOT343R
PMR290UNE,115
PMR290UNE,115
NXP USA Inc.
MOSFET N-CH 20V 700MA SC75
MK20FN1M0VLQ12R
MK20FN1M0VLQ12R
NXP USA Inc.
IC MCU 32BIT 1MB FLASH 144LQFP
P89LPC954FBD48,151
P89LPC954FBD48,151
NXP USA Inc.
IC MCU 8BIT 16KB FLASH 48LQFP
PCA9514AD,112
PCA9514AD,112
NXP USA Inc.
IC BUFFER I2C/SMBUS HOTSWAP 8SO
74LVC3G17DP-Q100125
74LVC3G17DP-Q100125
NXP USA Inc.
BUFFER, LVC/LCX/Z SERIES
74HC02D/AU118
74HC02D/AU118
NXP USA Inc.
IC GATE NOR 4CH 2-INP 14SO
74HCT573D/C4118
74HCT573D/C4118
NXP USA Inc.
BUS DRIVER, HCT SERIES, 8-BIT
PCF7961MTT/D1AC13J
PCF7961MTT/D1AC13J
NXP USA Inc.
IC REMOTE KEYLESS ENTRY 20TSSOP