BSS84AK-B215
  • Share:

NXP USA Inc. BSS84AK-B215

Manufacturer No:
BSS84AK-B215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AK is a P-channel enhancement mode Field-Effect Transistor (FET) manufactured by Nexperia. It is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. This component is designed for a variety of applications requiring low on-state resistance and high switching speeds.

Key Specifications

ParameterValue
Type numberBSS84AK
PackageSOT23
Channel typeP-channel
VDS [max]-50 V
RDSon [max] @ VGS = 10 V7500 mΩ
RDSon [max] @ VGS = 5 V8500 mΩ
Tj [max]150 °C
ID [max]-0.18 A
QGD [typ]0.09 nC
Ptot [max]0.42 W
VGSth [typ]-1.6 V
Automotive qualifiedYes
Ciss [typ]24 pF
Coss [typ]4.5 pF

Key Features

  • Low on-state resistance (RDSon) for efficient switching.
  • High switching speeds due to Trench MOSFET technology.
  • Compact SOT23 package suitable for space-constrained designs.
  • Automotive qualified, ensuring reliability in demanding automotive applications.
  • Low gate threshold voltage (VGSth) for easy control.

Applications

The BSS84AK is versatile and can be used in various applications across different industries, including:

  • Automotive systems for power management and control.
  • Industrial control systems requiring high reliability and efficiency.
  • Consumer electronics for power switching and voltage regulation.
  • Mobile and wearable devices where space and power efficiency are critical.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the BSS84AK?
    The maximum drain-source voltage (VDS) is -50 V.
  2. What is the package type of the BSS84AK?
    The BSS84AK is housed in a SOT23 (TO-236AB) package.
  3. What is the maximum on-state resistance (RDSon) at VGS = 10 V?
    The maximum on-state resistance (RDSon) at VGS = 10 V is 7500 mΩ.
  4. Is the BSS84AK automotive qualified?
    Yes, the BSS84AK is automotive qualified.
  5. What is the typical gate threshold voltage (VGSth)?
    The typical gate threshold voltage (VGSth) is -1.6 V.
  6. What is the maximum junction temperature (Tj)?
    The maximum junction temperature (Tj) is 150 °C.
  7. What is the maximum continuous drain current (ID)?
    The maximum continuous drain current (ID) is -0.18 A.
  8. What is the typical gate-drain charge (QGD)?
    The typical gate-drain charge (QGD) is 0.09 nC.
  9. What is the maximum total power dissipation (Ptot)?
    The maximum total power dissipation (Ptot) is 0.42 W.
  10. What are the typical input and output capacitances (Ciss and Coss)?
    The typical input capacitance (Ciss) is 24 pF, and the typical output capacitance (Coss) is 4.5 pF.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
0 Remaining View Similar

In Stock

-
424

Please send RFQ , we will respond immediately.

Same Series
RD15S10HT0/AA
RD15S10HT0/AA
CONN D-SUB RCPT 15POS CRIMP
DD15S2S5WV50
DD15S2S5WV50
CONN D-SUB HD RCPT 15P SLDR CUP
DD62M3200V50/AA
DD62M3200V50/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD26S100E2X/AA
DD26S100E2X/AA
CONN D-SUB HD RCPT 26POS CRIMP
DD26M20HE20/AA
DD26M20HE20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0TX/AA
DD26S2S0TX/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S500X
DD26S2S500X
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S0V30
DD26S2S0V30
CONN D-SUB HD RCPT 26P SLDR CUP
RD50S100V50
RD50S100V50
CONN D-SUB RCPT 50POS CRIMP
DD44S3200TX
DD44S3200TX
CONN D-SUB HD RCPT 44P VERT SLDR
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR

Related Product By Categories

FDMT80040DC
FDMT80040DC
onsemi
MOSFET N-CH 40V 420A 8PQFN
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STB18N65M5
STB18N65M5
STMicroelectronics
MOSFET N-CH 650V 15A D2PAK
2N7002 TR PBFREE
2N7002 TR PBFREE
Central Semiconductor Corp
MOSFET N-CH 60V 115MA SOT23
NTS4173PT1G
NTS4173PT1G
onsemi
MOSFET P-CH 30V 1.2A SC70-3
NTMFS5C460NLT1G
NTMFS5C460NLT1G
onsemi
MOSFET N-CH 40V 5DFN
STD2NK100Z
STD2NK100Z
STMicroelectronics
MOSFET N-CH 1000V 1.85A DPAK
PMV50XP215
PMV50XP215
NXP USA Inc.
P-CHANNEL MOSFET
IRFP4668PBF
IRFP4668PBF
Infineon Technologies
MOSFET N-CH 200V 130A TO247AC
STS12NF30L
STS12NF30L
STMicroelectronics
MOSFET N-CH 30V 12A 8SO
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
PH1930AL,115
PH1930AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56

Related Product By Brand

PESD5V0U1BA115
PESD5V0U1BA115
NXP USA Inc.
TVS DIODE 5VWM SOD323
BAS56/DG/B2215
BAS56/DG/B2215
NXP USA Inc.
BAS56 - RECTIFIER DIODE
PMEG4030ER/DG/B2,1
PMEG4030ER/DG/B2,1
NXP USA Inc.
PMEG4030ER/DG/B2,1
BC807-40QA,147
BC807-40QA,147
NXP USA Inc.
NOW NEXPERIA BC807-40 - SMALL SI
BC856BT115
BC856BT115
NXP USA Inc.
TRANS PNP 65V 0.1A SC75
BCP53-10T115
BCP53-10T115
NXP USA Inc.
TRANS PNP 80V 1A SOT223
MIMX8ML4CVNKZAB
MIMX8ML4CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUADLITE BGA
HEF4053BT/AUJ
HEF4053BT/AUJ
NXP USA Inc.
IC ANLG SWITCH TRPL SPDT 16SOIC
UJA1023T/2R04/C;51
UJA1023T/2R04/C;51
NXP USA Inc.
IC CAN/LIN I/O SLAVE 16-SOIC
PCA9554PW,118
PCA9554PW,118
NXP USA Inc.
IC I/O EXPANDER I2C 8B 16TSSOP
TDA8026ET/C2518
TDA8026ET/C2518
NXP USA Inc.
IC SMART CARD SLOT 64TFBGA
MPXV5100GC6U
MPXV5100GC6U
NXP USA Inc.
SENSOR GAUGE PRESS 14.5PSI MAX