BSH205G2215
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NXP USA Inc. BSH205G2215

Manufacturer No:
BSH205G2215
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
P-CHANNEL MOSFET
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSH205G2215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc. This component is part of NXP's extensive range of semiconductor products, known for their high performance and reliability. The BSH205G2215 is designed to meet the demands of various electronic systems, particularly in applications requiring low power consumption and high efficiency.

Key Specifications

Parameter Value Unit
Type P-channel -
Package SOT23 (TO-236AB) -
VDS (max) -20 V
RDSon (max) @ VGS = 4.5 V; @25°C 118
RDSon (max) @ VGS = 2.5 V 152
Tj (max) 175 °C
ID (max) -2.6 A
QGD (typ) 1.2 nC
QG(tot) (typ) @ VGS = 4.5 V 4.6 nC
Ptot (max) 1.3 W
VGSth (typ) -0.65 V
Automotive qualified Yes -
Ciss (typ) 421 pF
Coss (typ) 38 pF

Key Features

  • P-channel enhancement mode FET: Suitable for applications requiring low power consumption and high efficiency.
  • SOT23 package: Compact surface-mounted device (SMD) package, ideal for space-constrained designs.
  • Low RDSon: Offers low on-resistance, reducing power losses and improving overall system efficiency.
  • High temperature rating: Maximum junction temperature of 175°C, making it suitable for high-temperature applications.
  • Automotive qualified: Meets automotive standards, ensuring reliability and performance in demanding automotive environments.

Applications

  • Automotive systems: Suitable for various automotive applications due to its automotive qualification and robust performance.
  • Power management: Used in power management circuits to control and switch power efficiently.
  • Consumer electronics: Can be used in consumer electronics for power switching and control.
  • Industrial control systems: Applicable in industrial control systems where reliable and efficient power management is crucial.

Q & A

  1. What is the BSH205G2215?

    The BSH205G2215 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by NXP USA Inc.

  2. What package type does the BSH205G2215 use?

    The BSH205G2215 is packaged in a SOT23 (TO-236AB) surface-mounted device (SMD) package.

  3. What is the maximum drain-source voltage (VDS) for the BSH205G2215?

    The maximum drain-source voltage (VDS) is -20 V.

  4. What is the maximum on-resistance (RDSon) at VGS = 4.5 V?

    The maximum on-resistance (RDSon) at VGS = 4.5 V is 118 mΩ.

  5. Is the BSH205G2215 automotive qualified?

    Yes, the BSH205G2215 is automotive qualified.

  6. What is the maximum junction temperature (Tj) for the BSH205G2215?

    The maximum junction temperature (Tj) is 175°C.

  7. What are some common applications for the BSH205G2215?

    Common applications include automotive systems, power management circuits, consumer electronics, and industrial control systems.

  8. How can I obtain the datasheet for the BSH205G2215?

    You can obtain the datasheet from NXP's official website or through authorized distributors.

  9. Is the BSH205G2215 RoHS compliant?

    Yes, the BSH205G2215 is RoHS compliant.

  10. What is the typical gate-source threshold voltage (VGSth) for the BSH205G2215?

    The typical gate-source threshold voltage (VGSth) is -0.65 V.

Product Attributes

FET Type:- 
Technology:- 
Drain to Source Voltage (Vdss):- 
Current - Continuous Drain (Id) @ 25°C:- 
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:- 
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:- 
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:- 
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:- 
Supplier Device Package:- 
Package / Case:- 
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Similar Products

Part Number BSH205G2215 BSH205G2235
Manufacturer NXP USA Inc. NXP USA Inc.
Product Status Active Active
FET Type - -
Technology - -
Drain to Source Voltage (Vdss) - -
Current - Continuous Drain (Id) @ 25°C - -
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - -
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) - -
Operating Temperature - -
Mounting Type - -
Supplier Device Package - -
Package / Case - -

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