BC846BM315
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NXP USA Inc. BC846BM315

Manufacturer No:
BC846BM315
Manufacturer:
NXP USA Inc.
Package:
Bulk
Description:
TRANS NPN 65V 0.1A DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC846BM315 is a bipolar junction transistor (BJT) produced by NXP USA Inc. This component is part of the BC846 series, known for its reliability and versatility in various electronic applications. The BC846BM315 is specifically designed as an NPN transistor, making it suitable for a wide range of uses, including general-purpose amplification and switching.

Key Specifications

ParameterValue
VCEO [max]65 V
IC [max]100 mA
hFE [min]200
hFE [max]450
PackingDFN1006B-3
Automotive QualifiedYes
RoHS ComplianceYes
Transistor PolarityNPN
Factory Pack Quantity3000

Key Features

  • High Voltage Capability: The BC846BM315 can handle a maximum collector-emitter voltage (VCEO) of 65 V, making it suitable for applications requiring higher voltage tolerance.
  • Current Handling: It has a maximum collector current (IC) of 100 mA, which is adequate for many general-purpose applications.
  • Current Gain: The transistor has a current gain (hFE) range of 200 to 450, ensuring reliable amplification and switching performance.
  • Packaging: The component is packaged in a DFN1006B-3 package, which is compact and suitable for surface-mount technology (SMT) assembly.
  • Automotive Qualification: The BC846BM315 is AEC-Q101 qualified, indicating its suitability for use in automotive applications where reliability and robustness are critical.
  • RoHS Compliance: The transistor is RoHS compliant, ensuring it meets environmental regulations regarding the use of hazardous substances.

Applications

The BC846BM315 is versatile and can be used in a variety of applications, including:

  • General-Purpose Amplification: Suitable for amplifying low-power signals in audio, radio, and other electronic circuits.
  • Switching Circuits: Can be used in switching applications where high reliability and low power consumption are required.
  • Automotive Electronics: Given its AEC-Q101 qualification, it is suitable for use in automotive systems, such as in-car entertainment, sensors, and control units.
  • Consumer Electronics: Used in various consumer electronic devices, including home appliances, gaming consoles, and mobile devices.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the BC846BM315?
    The maximum collector-emitter voltage (VCEO) of the BC846BM315 is 65 V.
  2. What is the maximum collector current (IC) of the BC846BM315?
    The maximum collector current (IC) of the BC846BM315 is 100 mA.
  3. What is the current gain (hFE) range of the BC846BM315?
    The current gain (hFE) range of the BC846BM315 is from 200 to 450.
  4. What type of packaging does the BC846BM315 use?
    The BC846BM315 is packaged in a DFN1006B-3 package.
  5. Is the BC846BM315 automotive qualified?
    Yes, the BC846BM315 is AEC-Q101 qualified, making it suitable for automotive applications.
  6. Is the BC846BM315 RoHS compliant?
    Yes, the BC846BM315 is RoHS compliant.
  7. What are some common applications of the BC846BM315?
    The BC846BM315 can be used in general-purpose amplification, switching circuits, automotive electronics, and consumer electronics.
  8. What is the factory pack quantity of the BC846BM315?
    The factory pack quantity of the BC846BM315 is 3000.
  9. What is the transistor polarity of the BC846BM315?
    The transistor polarity of the BC846BM315 is NPN.
  10. Can the BC846BM315 be used in high-temperature environments?
    While it can handle typical operating temperatures, it is important to refer to the datasheet for specific temperature ratings and limitations.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:200mV @ 500µA, 10mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 2mA, 5V
Power - Max:250 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:3-XFDFN
Supplier Device Package:DFN1006B-3
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Similar Products

Part Number BC846BM315 BC846BM,315
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type NPN NPN
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 65 V 65 V
Vce Saturation (Max) @ Ib, Ic 200mV @ 500µA, 10mA 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 15nA (ICBO) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 5V 200 @ 2mA, 5V
Power - Max 250 mW 250 mW
Frequency - Transition 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case 3-XFDFN 3-XFDFN
Supplier Device Package DFN1006B-3 DFN1006B-3

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