2N7002PT,115
  • Share:

NXP USA Inc. 2N7002PT,115

Manufacturer No:
2N7002PT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 310MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The 2N7002PT,115, produced by NXP USA Inc., is a N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. This MOSFET is part of the 2N7002 series, known for its low on-state resistance and superior switching performance. It is packaged in a small SOT-23 surface mount package, making it ideal for compact and efficient electronic designs.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage (Continuous) VGSS ±20 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 210 mA
On-Resistance (RDS(ON)) at VGS = 5V RDS(ON) 7.5 Ω
Gate Threshold Voltage VGS(th) 1.0 - 3.0 V
Input Capacitance Ciss 22 - 50 pF
Package Type SOT-23
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • Low On-Resistance: The 2N7002PT,115 features a low on-state resistance, which enhances its efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage range of 1.0 to 3.0 V, this MOSFET is easy to drive and control.
  • Low Input Capacitance: It has low input capacitance, which contributes to fast switching speeds.
  • Fast Switching Speed: Designed for high-speed switching, making it suitable for applications requiring quick and efficient signal switching.
  • Small Surface Mount Package: The SOT-23 package is compact and easy to integrate into circuit boards.
  • Lead-Free and RoHS Compliant: The device is totally lead-free and fully RoHS compliant, ensuring environmental safety and regulatory compliance.
  • Halogen and Antimony Free: Classified as a “Green” device, it is free from halogen and antimony, making it environmentally friendly.
  • AEC-Q101 Qualified: Qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Applications

  • Motor Control: Suitable for motor control applications due to its high current handling and fast switching capabilities.
  • Power Management Functions: Ideal for various power management functions in electronic devices, including power supplies and voltage regulators.
  • Automotive Systems: Qualified to AEC-Q101 standards, making it reliable for use in automotive systems.
  • General Electronic Devices: Can be used in a wide range of electronic devices requiring efficient power management and switching.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002PT,115?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current (ID) at 25°C is 210 mA.

  3. What is the on-resistance of the MOSFET at VGS = 5V?

    The on-resistance (RDS(ON)) at VGS = 5V is 7.5 Ω.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is 1.0 to 3.0 V.

  5. What is the package type of the 2N7002PT,115?

    The package type is SOT-23.

  6. Is the 2N7002PT,115 RoHS compliant?

    Yes, the device is fully RoHS compliant and lead-free.

  7. What are the typical applications of the 2N7002PT,115?

    Typical applications include motor control, power management functions, and automotive systems.

  8. What is the operating temperature range of the MOSFET?

    The operating temperature range is -55°C to 150°C.

  9. Does the 2N7002PT,115 meet automotive reliability standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  10. What are the environmental benefits of the 2N7002PT,115?

    The device is halogen and antimony free, making it an environmentally friendly “Green” device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
0 Remaining View Similar

In Stock

-
192

Please send RFQ , we will respond immediately.

Similar Products

Part Number 2N7002PT,115 2N7002PW,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 250mW (Ta) 260mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323
Package / Case SC-75, SOT-416 SC-70, SOT-323

Related Product By Categories

BSS123NH6327XTSA1
BSS123NH6327XTSA1
Infineon Technologies
MOSFET N-CH 100V 190MA SOT23-3
STW58N65DM2AG
STW58N65DM2AG
STMicroelectronics
MOSFET N-CH 650V 48A TO247
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
BUK7Y4R4-40EX
BUK7Y4R4-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 100A LFPAK56
NTLUS3A18PZTAG
NTLUS3A18PZTAG
onsemi
MOSFET P-CH 20V 5.1A 6UDFN
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
STP24NM60N
STP24NM60N
STMicroelectronics
MOSFET N-CH 600V 17A TO220
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

BFG520,235
BFG520,235
NXP USA Inc.
RF TRANS NPN 15V 9GHZ SOT143B
ADC1004S030TS/C1:1
ADC1004S030TS/C1:1
NXP USA Inc.
IC ADC 10BIT 28SSOP
LPC2294HBD144/01K
LPC2294HBD144/01K
NXP USA Inc.
IC MCU 16/32B 256KB FLSH 144LQFP
MKE16Z64VLF4
MKE16Z64VLF4
NXP USA Inc.
IC MCU 32BIT 64KB FLASH 48LQFP
LS1028AXN7PQA
LS1028AXN7PQA
NXP USA Inc.
LS1028A-1500 XT NO SEC
MIMX8ML6CVNKZAB
MIMX8ML6CVNKZAB
NXP USA Inc.
IC I.MX 8M PLUS QUAD BGA
TDA8932T/N1,118
TDA8932T/N1,118
NXP USA Inc.
IC AMP CLSS D MONO/STER 55W 32SO
74LVC1G126GW/AU125
74LVC1G126GW/AU125
NXP USA Inc.
BUS DRIVER, LVC/LCX/Z SERIES
MC34716EP
MC34716EP
NXP USA Inc.
IC REG CONV DDR 2OUT 26QFN
MFRC53001T/0FE,112
MFRC53001T/0FE,112
NXP USA Inc.
IC RFID READER 13.56MHZ 32SO
MPX5010GP
MPX5010GP
NXP USA Inc.
SENSOR GAUGE PRESS 1.45 PSI MAX
MPXHZ6115AC6T1
MPXHZ6115AC6T1
NXP USA Inc.
SENSOR ABS PRESS 16.7PSI MAX