2N7002PT,115
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NXP USA Inc. 2N7002PT,115

Manufacturer No:
2N7002PT,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 310MA SC75
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The 2N7002PT,115, produced by NXP USA Inc., is a N-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. This MOSFET is part of the 2N7002 series, known for its low on-state resistance and superior switching performance. It is packaged in a small SOT-23 surface mount package, making it ideal for compact and efficient electronic designs.

Key Specifications

Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage (Continuous) VGSS ±20 V
Continuous Drain Current (VGS = 10V, TA = +25°C) ID 210 mA
On-Resistance (RDS(ON)) at VGS = 5V RDS(ON) 7.5 Ω
Gate Threshold Voltage VGS(th) 1.0 - 3.0 V
Input Capacitance Ciss 22 - 50 pF
Package Type SOT-23
Operating Temperature Range TJ -55°C to 150°C

Key Features

  • Low On-Resistance: The 2N7002PT,115 features a low on-state resistance, which enhances its efficiency in power management applications.
  • Low Gate Threshold Voltage: With a gate threshold voltage range of 1.0 to 3.0 V, this MOSFET is easy to drive and control.
  • Low Input Capacitance: It has low input capacitance, which contributes to fast switching speeds.
  • Fast Switching Speed: Designed for high-speed switching, making it suitable for applications requiring quick and efficient signal switching.
  • Small Surface Mount Package: The SOT-23 package is compact and easy to integrate into circuit boards.
  • Lead-Free and RoHS Compliant: The device is totally lead-free and fully RoHS compliant, ensuring environmental safety and regulatory compliance.
  • Halogen and Antimony Free: Classified as a “Green” device, it is free from halogen and antimony, making it environmentally friendly.
  • AEC-Q101 Qualified: Qualified to AEC-Q101 standards, ensuring high reliability for automotive and other demanding applications.

Applications

  • Motor Control: Suitable for motor control applications due to its high current handling and fast switching capabilities.
  • Power Management Functions: Ideal for various power management functions in electronic devices, including power supplies and voltage regulators.
  • Automotive Systems: Qualified to AEC-Q101 standards, making it reliable for use in automotive systems.
  • General Electronic Devices: Can be used in a wide range of electronic devices requiring efficient power management and switching.

Q & A

  1. What is the maximum drain-source voltage of the 2N7002PT,115?

    The maximum drain-source voltage (VDSS) is 60 V.

  2. What is the continuous drain current at 25°C?

    The continuous drain current (ID) at 25°C is 210 mA.

  3. What is the on-resistance of the MOSFET at VGS = 5V?

    The on-resistance (RDS(ON)) at VGS = 5V is 7.5 Ω.

  4. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(th)) range is 1.0 to 3.0 V.

  5. What is the package type of the 2N7002PT,115?

    The package type is SOT-23.

  6. Is the 2N7002PT,115 RoHS compliant?

    Yes, the device is fully RoHS compliant and lead-free.

  7. What are the typical applications of the 2N7002PT,115?

    Typical applications include motor control, power management functions, and automotive systems.

  8. What is the operating temperature range of the MOSFET?

    The operating temperature range is -55°C to 150°C.

  9. Does the 2N7002PT,115 meet automotive reliability standards?

    Yes, it is qualified to AEC-Q101 standards for high reliability in automotive applications.

  10. What are the environmental benefits of the 2N7002PT,115?

    The device is halogen and antimony free, making it an environmentally friendly “Green” device.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.8 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):250mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-75
Package / Case:SC-75, SOT-416
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Similar Products

Part Number 2N7002PT,115 2N7002PW,115
Manufacturer NXP USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 310mA (Ta) 310mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 10V
Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V 1.6Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.8 nC @ 4.5 V 0.8 nC @ 4.5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 50 pF @ 10 V 50 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 250mW (Ta) 260mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SC-75 SOT-323
Package / Case SC-75, SOT-416 SC-70, SOT-323

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