Overview
The PSMN8R2-80YS,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's Advanced TrenchMOS technology, which offers low RDSon and low gate charge, resulting in high efficiency gains in switching power converters. The MOSFET is packaged in the LFPAK56 (Power-SO8) package, known for its improved mechanical and thermal characteristics.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type Number | PSMN8R2-80YS | - |
| Package | LFPAK56; Power-SO8 (SOT669) | - |
| Channel Type | N | - |
| V DS [max] | 80 | V |
| R DSon [max] @ V GS = 10 V | 8.5 | mΩ |
| T j [max] | 175 | °C |
| I D [max] | 82 | A |
| Q GD [typ] | 12 | nC |
| Q G(tot) [typ] @ V GS = 10 V | 55 | nC |
| P tot [max] | 130 | W |
| Q r [typ] | 106 | nC |
| V GSth [typ] | 3 | V |
| Automotive Qualified | No | - |
| C iss [typ] | 3640 | pF |
| C oss [typ] | 390 | pF |
Key Features
- Advanced TrenchMOS Technology: Offers low RDSon and low gate charge, enhancing efficiency in switching power converters.
- High Efficiency: Optimized for high efficiency gains, making it suitable for a wide range of power conversion applications.
- Improved Mechanical and Thermal Characteristics: The LFPAK56 package ensures better mechanical and thermal performance.
- High Current Capability: Maximum drain current of 82 A, making it suitable for high-power applications.
- Low Gate Threshold Voltage: Typical gate threshold voltage of 3 V, facilitating easier control and lower power consumption.
Applications
- Switching Power Converters: Ideal for use in DC-DC converters, power supplies, and other switching power applications due to its high efficiency and low RDSon.
- Automotive Systems: Although not automotive qualified, it can be used in various automotive power management and control systems where high reliability is required.
- Industrial and Power Systems: Suitable for industrial power supplies, motor control, and other high-power applications requiring efficient and reliable MOSFETs.
- Consumer and Mobile Devices: Can be used in power management circuits for consumer electronics and mobile devices where efficiency and compact design are crucial.
Q & A
- What is the maximum drain-source voltage (V DS) of the PSMN8R2-80YS?
The maximum drain-source voltage (V DS) is 80 V.
- What is the typical on-resistance (R DSon) at V GS = 10 V?
The typical on-resistance (R DSon) at V GS = 10 V is 8.5 mΩ.
- What is the maximum junction temperature (T j) of this MOSFET?
The maximum junction temperature (T j) is 175 °C.
- What is the maximum drain current (I D) of the PSMN8R2-80YS?
The maximum drain current (I D) is 82 A.
- What package type is used for the PSMN8R2-80YS?
The package type is LFPAK56 (Power-SO8), also known as SOT669.
- Is the PSMN8R2-80YS automotive qualified?
No, the PSMN8R2-80YS is not automotive qualified.
- What are the typical gate-source threshold voltage (V GSth) and gate charge (Q G) values?
The typical gate-source threshold voltage (V GSth) is 3 V, and the typical total gate charge (Q G(tot)) at V GS = 10 V is 55 nC.
- What is the maximum total power dissipation (P tot) of this MOSFET?
The maximum total power dissipation (P tot) is 130 W.
- Where can I find detailed technical support and documentation for the PSMN8R2-80YS?
Detailed technical support and documentation can be found on Nexperia's official website and through their local sales offices.
- What are some common applications for the PSMN8R2-80YS MOSFET?
Common applications include switching power converters, industrial power systems, and power management in consumer and mobile devices.
