PSMN7R0-100PS,127
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Nexperia USA Inc. PSMN7R0-100PS,127

Manufacturer No:
PSMN7R0-100PS,127
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
MOSFET N-CH 100V 100A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The PSMN7R0-100PS,127 is a high-performance N-Channel MOSFET manufactured by Nexperia USA Inc. This device is designed for high-power applications, offering a continuous drain current of 100A and a drain-source voltage of 100V. The MOSFET is packaged in a TO-220AB case, making it suitable for through-hole mounting. With its low on-resistance and high power dissipation capabilities, this MOSFET is ideal for various industrial and automotive applications.

Key Specifications

CategoryValue
ManufacturerNexperia USA Inc.
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Continuous Drain Current (Id) @ 25°C100 A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10 V
Rds On (Max) @ Id, Vgs12 mOhm @ 15 A, 10 V
Vgs(th) (Max) @ Id4 V @ 1 mA
Gate Charge (Qg) (Max) @ Vgs125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds6686 pF @ 50 V
Power Dissipation (Max)269 W (Tc)
Vgs (Max)±20 V
Package / CaseTO-220-3
Mounting TypeThrough Hole

Key Features

  • High continuous drain current of 100 A.
  • Low on-resistance of 12 mOhm at 15 A and 10 V.
  • High power dissipation of up to 269 W.
  • Wide operating temperature range.
  • Gate charge of 125 nC at 10 V.
  • Input capacitance of 6686 pF at 50 V.
  • TO-220AB package for through-hole mounting.

Applications

The PSMN7R0-100PS,127 MOSFET is suitable for a variety of high-power applications, including:

  • Automotive systems: Such as power steering, braking, and engine control.
  • Industrial power supplies: High-power DC-DC converters and switching power supplies.
  • Motor control: Inverter and converter circuits for motor drives.
  • Power management: High-current switching and power management in various electronic systems.

Q & A

  1. What is the maximum drain-source voltage of the PSMN7R0-100PS,127 MOSFET?
    The maximum drain-source voltage is 100 V.
  2. What is the continuous drain current of the PSMN7R0-100PS,127 MOSFET at 25°C?
    The continuous drain current is 100 A (Tc).
  3. What is the package type of the PSMN7R0-100PS,127 MOSFET?
    The package type is TO-220-3.
  4. What is the maximum power dissipation of the PSMN7R0-100PS,127 MOSFET?
    The maximum power dissipation is 269 W (Tc).
  5. What is the typical on-resistance of the PSMN7R0-100PS,127 MOSFET?
    The typical on-resistance is 12 mOhm at 15 A and 10 V.
  6. What is the gate charge of the PSMN7R0-100PS,127 MOSFET?
    The gate charge is 125 nC at 10 V.
  7. What is the input capacitance of the PSMN7R0-100PS,127 MOSFET?
    The input capacitance is 6686 pF at 50 V.
  8. What are the typical applications of the PSMN7R0-100PS,127 MOSFET?
    Typical applications include automotive systems, industrial power supplies, motor control, and power management.
  9. What is the mounting type of the PSMN7R0-100PS,127 MOSFET?
    The mounting type is through-hole.
  10. What is the maximum gate-source voltage of the PSMN7R0-100PS,127 MOSFET?
    The maximum gate-source voltage is ±20 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:12mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:125 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6686 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):269W (Tc)
Operating Temperature:- 
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN7R0-100PS,127 PSMN7R0-100XS,127 PSMN5R0-100PS,127 PSMN7R0-100ES,127
Manufacturer Nexperia USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 55A (Tc) 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 15A, 10V 6.8mOhm @ 15A, 10V 5mOhm @ 25A, 10V 6.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 125 nC @ 10 V 121 nC @ 10 V 170 nC @ 10 V 125 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6686 pF @ 50 V 6686 pF @ 50 V 9900 pF @ 50 V 6686 pF @ 50 V
FET Feature - - - -
Power Dissipation (Max) 269W (Tc) 57.7W (Tc) 338W (Tc) 269W (Tc)
Operating Temperature - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220AB TO-220F TO-220AB I2PAK
Package / Case TO-220-3 TO-220-3 Full Pack, Isolated Tab TO-220-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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