Overview
The PSMN5R6-60YLX is a high-performance N-channel MOSFET manufactured by Nexperia USA Inc. This device is part of the PSMN5R6 series and is known for its robust specifications and reliability. The MOSFET is packaged in the SOT-669 format, which is a surface-mount package, making it suitable for a wide range of applications that require high power handling and efficiency.
This MOSFET is designed to operate with a drain-to-source voltage (Vdss) of up to 60V and can handle a continuous drain current (Id) of 100A. Its low on-resistance (Rds(on)) of 5.6 mΩ at 10V gate-source voltage ensures minimal power loss and high efficiency in power management systems.
Key Specifications
| Attribute | Value |
|---|---|
| FET Type | N-Channel |
| No of Channels | 1 |
| Drain-to-Source Voltage (Vdss) | 60V |
| Drain-Source On Resistance-Max (Rds(on)) | 5.6 mΩ |
| Rated Power Dissipation (Pd) | 167W |
| Gate Charge (Qg) | 66.8 nC |
| Gate-Source Voltage-Max (Vgss) | 20V |
| Drain Current (Id) | 100A |
| Turn-on Delay Time | 19.3 ns |
| Turn-off Delay Time | 49.4 ns |
| Rise Time | 36.4 ns |
| Fall Time | 32.1 ns |
| Operating Temperature Range | -55°C to +175°C |
| Gate Source Threshold Voltage | 1.7V |
| Technology | TrenchMOS |
| Input Capacitance | 3769 pF |
| Package Style | SOT-669 |
| Mounting Method | Surface Mount |
Key Features
- High Power Handling: The PSMN5R6-60YLX can handle a continuous drain current of 100A and a drain-to-source voltage of up to 60V, making it suitable for high-power applications.
- Low On-Resistance: With an Rds(on) of 5.6 mΩ, this MOSFET minimizes power loss and enhances efficiency in power management systems.
- TrenchMOS Technology: Utilizes advanced TrenchMOS technology for improved performance and reliability.
- Wide Operating Temperature Range: Operates from -55°C to +175°C, ensuring stability across various environmental conditions.
- Surface Mount Package: Packaged in the SOT-669 format, which is ideal for surface-mount applications and facilitates easy integration into modern PCB designs.
Applications
- Power Management Systems: Ideal for use in power supplies, DC-DC converters, and other power management circuits due to its high power handling and low on-resistance.
- Automotive Systems: Suitable for automotive applications such as motor control, battery management, and other high-power electronic systems.
- Industrial Control Systems: Used in industrial control systems, including motor drives, power inverters, and other high-power control circuits.
- Consumer Electronics: Can be used in high-power consumer electronics such as gaming consoles, high-end computing systems, and power tools.
Q & A
- What is the maximum drain-to-source voltage (Vdss) of the PSMN5R6-60YLX MOSFET?
The maximum drain-to-source voltage (Vdss) is 60V.
- What is the continuous drain current (Id) rating of this MOSFET?
The continuous drain current (Id) rating is 100A.
- What is the on-resistance (Rds(on)) of the PSMN5R6-60YLX?
The on-resistance (Rds(on)) is 5.6 mΩ.
- What is the operating temperature range of this MOSFET?
The operating temperature range is from -55°C to +175°C.
- What is the package style of the PSMN5R6-60YLX?
The package style is SOT-669, which is a surface-mount package.
- What technology is used in the PSMN5R6-60YLX MOSFET?
The PSMN5R6-60YLX uses TrenchMOS technology.
- What is the gate-source threshold voltage of this MOSFET?
The gate-source threshold voltage is 1.7V.
- Is the PSMN5R6-60YLX RoHS compliant?
Yes, the PSMN5R6-60YLX is RoHS compliant.
- What is the rated power dissipation (Pd) of the PSMN5R6-60YLX?
The rated power dissipation (Pd) is 167W.
- What are some typical applications for the PSMN5R6-60YLX MOSFET?
Typical applications include power management systems, automotive systems, industrial control systems, and high-power consumer electronics.
