PSMN3R3-40YS,115
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Nexperia USA Inc. PSMN3R3-40YS,115

Manufacturer No:
PSMN3R3-40YS,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 40V 100A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN3R3-40YS,115 is a standard level N-channel MOSFET produced by Nexperia USA Inc. This device is packaged in the LFPAK56 (Power-SO8) format and is designed for high-performance applications. It is qualified to operate at temperatures up to 175 °C, making it suitable for a wide range of industrial and automotive uses. The MOSFET features a low on-state resistance and high current handling capabilities, making it an ideal choice for power management and switching applications.

Key Specifications

ParameterValueUnit
Drain-Source Voltage (VDS)40V
Drain Current (ID)100A
On-State Resistance (RDS(on))3.3 mΩ
Power Dissipation (PTOT)117W
Threshold Voltage (VGS(th))1-4V
Package TypeLFPAK56 (Power-SO8)
Operating Temperature Range-55 to 175°C

Key Features

  • Low on-state resistance of 3.3 mΩ, ensuring minimal power loss.
  • High current handling capability of up to 100 A.
  • Qualified to operate at temperatures up to 175 °C.
  • LFPAK56 (Power-SO8) package for efficient heat dissipation and compact design.
  • Standard level N-channel MOSFET suitable for a wide range of applications.

Applications

The PSMN3R3-40YS,115 is suitable for various high-power applications, including:

  • Power management and switching in industrial and automotive systems.
  • Motor control and drive systems.
  • Power supplies and DC-DC converters.
  • Battery management systems.
  • High-performance electronic devices requiring efficient power handling.

Q & A

  1. What is the maximum drain-source voltage of the PSMN3R3-40YS,115?
    The maximum drain-source voltage is 40 V.
  2. What is the on-state resistance of the PSMN3R3-40YS,115?
    The on-state resistance is 3.3 mΩ.
  3. What is the maximum current handling capability of the PSMN3R3-40YS,115?
    The maximum current handling capability is up to 100 A.
  4. In what package is the PSMN3R3-40YS,115 available?
    The device is packaged in LFPAK56 (Power-SO8).
  5. What is the operating temperature range of the PSMN3R3-40YS,115?
    The operating temperature range is -55 to 175 °C.
  6. What are some typical applications for the PSMN3R3-40YS,115?
    Typical applications include power management, motor control, power supplies, DC-DC converters, and battery management systems.
  7. Is the PSMN3R3-40YS,115 suitable for automotive applications?
    Yes, it is qualified for use in automotive and industrial applications.
  8. What is the power dissipation capability of the PSMN3R3-40YS,115?
    The power dissipation capability is up to 117 W.
  9. What is the threshold voltage range of the PSMN3R3-40YS,115?
    The threshold voltage range is 1-4 V.
  10. Where can I find detailed specifications for the PSMN3R3-40YS,115?
    Detailed specifications can be found in the datasheet available on Nexperia's official website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:49 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2754 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):117W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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