PSMN2R8-80BS,118
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Nexperia USA Inc. PSMN2R8-80BS,118

Manufacturer No:
PSMN2R8-80BS,118
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 80V 120A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PSMN2R8-80BS,118 is a standard level N-channel MOSFET produced by Nexperia USA Inc. This component is housed in a D2PAK package and is qualified for operation up to 175°C, making it suitable for a wide range of high-temperature applications. The MOSFET is designed to provide high performance and reliability in various power management and switching roles.

Key Specifications

Parameter Value Unit
VDS (Drain-Source Voltage) 80 V
ID (Continuous Drain Current) 120 A
RDS(on) (On-State Drain-Source Resistance) 3 mΩ @ 25 A, 10 V
Ptot (Total Power Dissipation) 306 W
VGS(th) (Gate-Source Threshold Voltage) 4 V @ 1 mA V
Package D2PAK -
Operating Temperature Range -55 to 175 °C

Key Features

  • High continuous drain current of 120 A.
  • Low on-state drain-source resistance (RDS(on)) of 3 mΩ @ 25 A, 10 V.
  • High total power dissipation of 306 W.
  • Qualified for operation up to 175°C, making it suitable for high-temperature applications.
  • D2PAK package for efficient heat dissipation and compact design.

Applications

  • Power management in high-power systems.
  • Switching applications requiring high current and low resistance.
  • Automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor control systems.
  • High-temperature environments such as in aerospace and defense applications.

Q & A

  1. What is the maximum drain-source voltage of the PSMN2R8-80BS,118 MOSFET?

    The maximum drain-source voltage (VDS) is 80 V.

  2. What is the continuous drain current rating of this MOSFET?

    The continuous drain current (ID) is 120 A.

  3. What is the on-state drain-source resistance (RDS(on)) of the PSMN2R8-80BS,118?

    The on-state drain-source resistance (RDS(on)) is 3 mΩ @ 25 A, 10 V.

  4. What is the total power dissipation (Ptot) of this MOSFET?

    The total power dissipation (Ptot) is 306 W.

  5. What is the gate-source threshold voltage (VGS(th)) of the PSMN2R8-80BS,118?

    The gate-source threshold voltage (VGS(th)) is 4 V @ 1 mA.

  6. In what package is the PSMN2R8-80BS,118 MOSFET available?

    The MOSFET is available in a D2PAK package.

  7. What is the operating temperature range of the PSMN2R8-80BS,118?

    The operating temperature range is -55 to 175°C.

  8. Is the PSMN2R8-80BS,118 suitable for high-temperature applications?

    Yes, it is qualified for operation up to 175°C, making it suitable for high-temperature applications.

  9. What are some common applications of the PSMN2R8-80BS,118 MOSFET?

    Common applications include power management in high-power systems, switching applications, automotive systems, industrial power supplies, and high-temperature environments.

  10. Where can I find detailed specifications and datasheets for the PSMN2R8-80BS,118?

    Detailed specifications and datasheets can be found on the Nexperia website, as well as through distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:139 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:9961 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):306W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D2PAK
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number PSMN2R8-80BS,118 PSMN2R8-40BS,118
Manufacturer Nexperia USA Inc. NXP USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 25A, 10V 2.9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 139 nC @ 10 V 71 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 9961 pF @ 40 V 4491 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 306W (Tc) 211W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D2PAK D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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