Overview
The PSMN2R4-30MLD is an N-channel 30 V, 2.4 mΩ logic level MOSFET from Nexperia, utilizing the NextPowerS3 Technology in the LFPAK33 package. This MOSFET is designed for high system efficiency, especially at higher switching frequencies, and features superfast switching with soft-recovery characteristics. It is widely used in various applications across automotive, industrial, power, computing, and consumer electronics due to its robust performance and reliability.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| VDS (Drain-Source Voltage) | 25 °C ≤ Tj ≤ 175 °C | - | - | 30 | V |
| VDGR (Drain-Gate Voltage) | 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ | - | - | 30 | V |
| VGS (Gate-Source Voltage) | - | -20 | - | 20 | V |
| RDSon @ VGS = 10 V | VGS = 10 V; ID = 25 A; Tj = 25 °C | - | 2 | 2.4 | mΩ |
| RDSon @ VGS = 4.5 V | VGS = 4.5 V; ID = 25 A; Tj = 25 °C | - | 2.6 | 3.2 | mΩ |
| Tj (Junction Temperature) | - | -55 | - | 175 | °C |
| ID (Drain Current) | - | - | - | 70 | A |
| QGD (Gate-Drain Charge) | VGS = 4.5 V; ID = 25 A; VDS = 15 V | - | 5.6 | - | nC |
| QG(tot) @ VGS = 4.5 V | VGS = 4.5 V | - | 16 | - | nC |
| QG(tot) @ VGS = 10 V | VGS = 10 V | - | 34 | - | nC |
| Ptot (Total Power Dissipation) | Tmb = 25 °C | - | - | 91 | W |
| VGS(th) (Gate-Source Threshold Voltage) | ID = 1 mA; VDS = VGS; Tj = 25 °C | 1.2 | 1.7 | 2.2 | V |
Key Features
- Ultra-low QG, QGD, and QOSS for high system efficiency, especially at higher switching frequencies.
- Superfast switching with soft-recovery characteristics.
- Logic level gate drive, making it compatible with low voltage microcontrollers and other logic circuits.
- LFPAK33 package, which is a leadless SMD (Surface Mount Device) package, offering excellent thermal performance and a small footprint.
- Compliant with EU RoHS and REACH regulations, and halogen-free according to Nexperia's definition.
Applications
- Automotive systems: Suitable for various automotive applications due to its robustness and reliability.
- Industrial power systems: Used in power supplies, motor control, and other industrial power management systems.
- Computing and consumer electronics: Ideal for power management in computing devices, consumer electronics, and mobile devices.
- Power conversion and switching: Used in DC-DC converters, power factor correction (PFC), and other switching applications.
Q & A
- What is the maximum drain-source voltage (VDS) of the PSMN2R4-30MLD MOSFET?
The maximum drain-source voltage (VDS) is 30 V.
- What is the typical on-state resistance (RDSon) at VGS = 10 V?
The typical on-state resistance (RDSon) at VGS = 10 V is 2 mΩ.
- What is the maximum junction temperature (Tj) for the PSMN2R4-30MLD?
The maximum junction temperature (Tj) is 175 °C.
- Is the PSMN2R4-30MLD MOSFET RoHS compliant?
Yes, the PSMN2R4-30MLD is compliant with EU RoHS and is halogen-free according to Nexperia's definition.
- What is the typical gate-source threshold voltage (VGS(th))?
The typical gate-source threshold voltage (VGS(th)) is 1.7 V.
- What package type is used for the PSMN2R4-30MLD MOSFET?
The PSMN2R4-30MLD uses the LFPAK33 package.
- What are the key benefits of the NextPowerS3 Technology used in this MOSFET?
The NextPowerS3 Technology offers ultra-low QG, QGD, and QOSS for high system efficiency and superfast switching with soft-recovery characteristics.
- Can the PSMN2R4-30MLD be used in automotive applications?
Yes, the PSMN2R4-30MLD is suitable for various automotive applications due to its robustness and reliability.
- What is the maximum drain current (ID) for the PSMN2R4-30MLD?
The maximum drain current (ID) is 70 A.
- How can I obtain the full datasheet for the PSMN2R4-30MLD?
The full datasheet can be obtained via the local Nexperia sales office or from authorized distributors.
