Overview
The PSMN1R4-40YLD/1X is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This component is part of Nexperia's NextPower-S3 series, which is known for its advanced Schottky-Plus technology. The MOSFET is housed in the LFPAK56 package, a leadless package that offers excellent thermal performance and a small footprint. This device is designed to provide low on-state resistance, high current handling, and fast switching times, making it suitable for a variety of power management and switching applications.
Key Specifications
| Parameter | Value |
|---|---|
| Manufacturer | Nexperia USA Inc. |
| Part Number | PSMN1R4-40YLD/1X |
| Package | LFPAK56 |
| Drain to Source Voltage (Vdss) | 40 V |
| On-State Resistance (Rds(on)) | Typically 1.1 mΩ at Vgs = 10 V, Id = 100 A |
| Continuous Drain Current (Id) | Up to 280 A at 25°C |
| Gate Threshold Voltage (Vgs(th)) | Typically 1.5 V at Id = 1 mA, Vds = Vgs |
| Gate Charge (Qg) | Typically 110 nC at Vgs = 10 V, Id = 100 A |
| Input Capacitance (Ciss) | Typically 5500 pF at Vds = 20 V, Vgs = 0 V |
Key Features
- Low On-State Resistance: The PSMN1R4-40YLD/1X features a very low Rds(on) of typically 1.1 mΩ, which minimizes power losses and enhances efficiency in power management applications.
- High Current Handling: With a continuous drain current of up to 280 A at 25°C, this MOSFET is suitable for high-power applications.
- Fast Switching Times: The device offers fast switching times, making it ideal for applications requiring high-frequency switching.
- Schottky-Plus Technology: Utilizes Nexperia's advanced Schottky-Plus technology, which combines the benefits of Schottky diodes and MOSFETs for improved performance.
- LFPAK56 Package: The leadless LFPAK56 package provides excellent thermal performance and a compact footprint, making it suitable for space-constrained designs.
Applications
- Power Management: Suitable for various power management applications, including DC-DC converters, power supplies, and voltage regulators.
- Motor Control: Used in motor control circuits due to its high current handling and fast switching capabilities.
- Switching Applications: Ideal for high-frequency switching applications such as inverter circuits and power amplifiers.
- Automotive Systems: Can be used in automotive systems requiring high reliability and performance, such as in electric vehicles and hybrid vehicles.
Q & A
- What is the typical on-state resistance of the PSMN1R4-40YLD/1X MOSFET?
The typical on-state resistance (Rds(on)) is 1.1 mΩ at Vgs = 10 V, Id = 100 A.
- What is the maximum continuous drain current of the PSMN1R4-40YLD/1X?
The maximum continuous drain current (Id) is up to 280 A at 25°C.
- What package type is used for the PSMN1R4-40YLD/1X MOSFET?
The MOSFET is housed in the LFPAK56 package.
- What technology is used in the PSMN1R4-40YLD/1X MOSFET?
The device utilizes Nexperia's advanced Schottky-Plus technology.
- What are some common applications for the PSMN1R4-40YLD/1X MOSFET?
Common applications include power management, motor control, switching applications, and automotive systems.
- What is the gate threshold voltage (Vgs(th)) of the PSMN1R4-40YLD/1X?
The gate threshold voltage (Vgs(th)) is typically 1.5 V at Id = 1 mA, Vds = Vgs.
- How much gate charge (Qg) does the PSMN1R4-40YLD/1X typically have?
The gate charge (Qg) is typically 110 nC at Vgs = 10 V, Id = 100 A.
- What is the input capacitance (Ciss) of the PSMN1R4-40YLD/1X?
The input capacitance (Ciss) is typically 5500 pF at Vds = 20 V, Vgs = 0 V.
- Is the PSMN1R4-40YLD/1X MOSFET RoHS compliant?
Yes, the PSMN1R4-40YLD/1X is RoHS compliant.
- Where can I find the datasheet for the PSMN1R4-40YLD/1X MOSFET?
The datasheet can be found on the Nexperia website or through authorized distributors like Digi-Key and Mouser.
