PSMN102-200Y,115
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Nexperia USA Inc. PSMN102-200Y,115

Manufacturer No:
PSMN102-200Y,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 200V 21.5A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PSMN102-200Y,115 is a standard level N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device utilizes TrenchMOS technology and is packaged in a plastic LFPAK-56-5 package. It is designed to offer high performance and reliability in various power management applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)200 V
Continuous Drain Current (Id)21.5 A
Power Dissipation (Ptot)113 W
On-State Resistance (Rds(on))102 mΩ @ 10 V, 12 A
Threshold Voltage (Vth)4 V @ 1 mA
Package TypeLFPAK-56-5

Key Features

  • High efficiency due to low on-state resistance (Rds(on)) of 102 mΩ @ 10 V, 12 A.
  • High current capability of up to 21.5 A.
  • High voltage rating of 200 V, making it suitable for a wide range of power management applications.
  • TrenchMOS technology for improved performance and reliability.
  • Compact LFPAK-56-5 package for space-efficient designs.

Applications

The PSMN102-200Y,115 is suitable for various power management applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Audio amplifiers and other high-power audio equipment.
  • Industrial and automotive systems requiring high reliability and performance.

Q & A

  1. What is the voltage rating of the PSMN102-200Y,115? The voltage rating (Vds) is 200 V.
  2. What is the continuous drain current of the PSMN102-200Y,115? The continuous drain current (Id) is 21.5 A.
  3. What is the on-state resistance of the PSMN102-200Y,115? The on-state resistance (Rds(on)) is 102 mΩ @ 10 V, 12 A.
  4. What is the threshold voltage of the PSMN102-200Y,115? The threshold voltage (Vth) is 4 V @ 1 mA.
  5. What package type is used for the PSMN102-200Y,115? The package type is LFPAK-56-5.
  6. What technology is used in the PSMN102-200Y,115? The device uses TrenchMOS technology.
  7. What are some common applications for the PSMN102-200Y,115? Common applications include power supplies, DC-DC converters, motor control systems, audio amplifiers, and industrial/automotive systems.
  8. Is the PSMN102-200Y,115 RoHS compliant? Yes, the PSMN102-200Y,115 is RoHS compliant.
  9. Where can I find detailed specifications for the PSMN102-200Y,115? Detailed specifications can be found in the datasheet available on the Nexperia website or through authorized distributors like Digi-Key and LCSC.
  10. What is the power dissipation capability of the PSMN102-200Y,115? The power dissipation (Ptot) is 113 W.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:21.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:102mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:30.7 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1568 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):113W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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