Overview
The PSMN015-110P,127 is a high-performance N-channel TrenchMOS standard level Field-Effect Transistor (FET) manufactured by Nexperia USA Inc. This device is designed using TrenchMOS technology, which offers superior switching performance and low on-state resistance. Although the specific part number is currently obsolete and no longer manufactured, it remains an important component in various legacy systems and applications.
Key Specifications
| Parameter | Value |
|---|---|
| Package | TO-220-3 (Through Hole) |
| Drain to Source Voltage (Vdss) | 110 V |
| Continuous Drain Current (Id) @ 25°C | 75 A (Tc) |
| Power Dissipation (Max) | 300 W (Tc) |
| On-State Resistance (Rds On) @ Id, Vgs | 15 mOhm @ 25 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) @ Id | 4 V @ 1 mA |
| Maximum Gate Voltage (Vgs) | ±20 V |
| Input Capacitance (Ciss) @ Vds | 4900 pF @ 25 V |
| Gate Charge (Qg) @ Vgs | 90 nC @ 10 V |
| Operating Temperature (TJ) | -55°C ~ 175°C |
Key Features
- TrenchMOS technology for enhanced switching performance and low on-state resistance.
- High continuous drain current of 75 A.
- Maximum power dissipation of 300 W.
- Wide operating temperature range from -55°C to 175°C.
- Low gate threshold voltage and high gate charge efficiency.
Applications
The PSMN015-110P,127 is suitable for various high-power applications, including but not limited to:
- Power supplies and DC-DC converters.
- Motor control and drive systems.
- Industrial automation and control systems.
- Automotive systems requiring high reliability and performance.
- High-frequency switching circuits.
Q & A
- What is the maximum drain to source voltage of the PSMN015-110P,127?
The maximum drain to source voltage is 110 V. - What is the continuous drain current rating of this MOSFET?
The continuous drain current rating is 75 A at 25°C. - What is the maximum power dissipation of the PSMN015-110P,127?
The maximum power dissipation is 300 W. - What is the on-state resistance of this MOSFET?
The on-state resistance is 15 mOhm at 25 A and 10 V. - What is the gate threshold voltage of the PSMN015-110P,127?
The gate threshold voltage is 4 V at 1 mA. - What is the maximum gate voltage for this device?
The maximum gate voltage is ±20 V. - What is the operating temperature range of the PSMN015-110P,127?
The operating temperature range is from -55°C to 175°C. - What type of package does the PSMN015-110P,127 use?
The device uses a TO-220-3 (Through Hole) package. - Is the PSMN015-110P,127 still in production?
No, the PSMN015-110P,127 is currently obsolete and no longer manufactured. - What technology is used in the PSMN015-110P,127?
The device uses TrenchMOS technology.
