PSMN015-100P,127
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Nexperia USA Inc. PSMN015-100P,127

Manufacturer No:
PSMN015-100P,127
Manufacturer:
Nexperia USA Inc.
Package:
Tube
Description:
MOSFET N-CH 100V 75A TO220AB
Delivery:
Payment:
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Product Introduction

Overview

The PSMN015-100P,127 is a high-performance N-channel TrenchMOS SiliconMAX standard level Field-Effect Transistor (FET) produced by Nexperia USA Inc. This device is designed using advanced TrenchMOS technology, which offers low conduction losses and high efficiency. It is packaged in a TO-220AB plastic single-ended package, making it suitable for a variety of applications requiring high power handling and reliability.

Key Specifications

Parameter Value Unit
Channel Type N-Channel -
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 75 A
On-State Resistance (Rds On) @ Id, Vgs 15 mΩ @ 25A, 10V
Gate-Source Threshold Voltage (Vgs(th)) @ Id 4V @ 1mA V
Gate Charge (Qg) @ Vgs 90 nC @ 10 V nC
Input Capacitance (Ciss) @ Vds 4900 pF @ 25 V pF
Power Dissipation (Max) 300W (Tc) W
Operating Temperature -55°C ~ 175°C (TJ) °C
Mounting Type Through Hole -
Package / Case TO-220AB -

Key Features

  • Low conduction losses due to low on-state resistance (Rds On)
  • Rated for avalanche ruggedness, enhancing reliability in high-stress applications
  • Advanced TrenchMOS technology for high efficiency and performance
  • High continuous drain current of 75A at 25°C
  • Wide operating temperature range from -55°C to 175°C (TJ)

Applications

  • DC-to-DC converters
  • Switched-mode power supplies
  • Computing, communications, consumer, and industrial applications

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the PSMN015-100P,127?

    The maximum drain to source voltage (Vdss) is 100 V.

  2. What is the continuous drain current (Id) at 25°C for this MOSFET?

    The continuous drain current (Id) at 25°C is 75 A.

  3. What is the on-state resistance (Rds On) of the PSMN015-100P,127?

    The on-state resistance (Rds On) is 15 mΩ at 25 A and 10 V.

  4. What is the gate-source threshold voltage (Vgs(th)) of this MOSFET?

    The gate-source threshold voltage (Vgs(th)) is 4 V at 1 mA.

  5. What is the maximum operating temperature of the PSMN015-100P,127?

    The maximum operating temperature is 175°C (TJ).

  6. In what package is the PSMN015-100P,127 available?

    The PSMN015-100P,127 is available in a TO-220AB package.

  7. What are the typical applications of the PSMN015-100P,127?

    Typical applications include DC-to-DC converters, switched-mode power supplies, and various computing, communications, consumer, and industrial applications.

  8. What technology is used in the PSMN015-100P,127?

    The PSMN015-100P,127 uses advanced TrenchMOS technology.

  9. What is the maximum power dissipation of the PSMN015-100P,127?

    The maximum power dissipation is 300 W (Tc).

  10. Is the PSMN015-100P,127 rated for avalanche ruggedness?

    Yes, the PSMN015-100P,127 is rated for avalanche ruggedness.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:90 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4900 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):300W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220AB
Package / Case:TO-220-3
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Similar Products

Part Number PSMN015-100P,127 PSMN015-110P,127
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 110 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 25A, 10V 15mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 90 nC @ 10 V 90 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4900 pF @ 25 V 4900 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 300W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220AB TO-220AB
Package / Case TO-220-3 TO-220-3

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