PSMN011-60MSX
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Nexperia USA Inc. PSMN011-60MSX

Manufacturer No:
PSMN011-60MSX
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 60V 61A LFPAK33
Delivery:
Payment:
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iso45001
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Product Introduction

Overview

The PSMN011-60MSX is a high-performance N-Channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's extensive range of MOSFETs, known for their reliability and efficiency. The PSMN011-60MSX is packaged in the LFPAK33 format, which is designed to provide excellent thermal performance and a small footprint, making it ideal for a variety of applications where space is limited.

Key Specifications

ParameterValue
Voltage Rating (Vds)60 V
Continuous Drain Current (Id)61 A (at Tc)
Power Dissipation (Ptot)91 W (at Tc)
Package TypeLFPAK33
Pins4
Operating Temperature Range-55°C to 150°C

Key Features

  • High current handling capability of up to 61 A.
  • Low on-state resistance, reducing power losses.
  • LFPAK33 package for excellent thermal performance and a compact footprint.
  • Qualified to operate at temperatures up to 150°C.
  • Enhancement mode operation for easy control.

Applications

The PSMN011-60MSX is suitable for a wide range of applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drive systems.
  • Automotive systems, such as battery management and power steering.
  • Industrial control systems and power tools.
  • Renewable energy systems, such as solar and wind power inverters.

Q & A

  1. What is the voltage rating of the PSMN011-60MSX MOSFET?
    The voltage rating of the PSMN011-60MSX is 60 V.
  2. What is the maximum continuous drain current of the PSMN011-60MSX?
    The maximum continuous drain current is 61 A at Tc.
  3. What package type is used for the PSMN011-60MSX?
    The PSMN011-60MSX is packaged in the LFPAK33 format.
  4. What is the power dissipation capability of the PSMN011-60MSX?
    The power dissipation capability is 91 W at Tc.
  5. What is the operating temperature range of the PSMN011-60MSX?
    The operating temperature range is -55°C to 150°C.
  6. Is the PSMN011-60MSX suitable for automotive applications?
    Yes, it is suitable for automotive systems due to its high temperature rating and robust performance.
  7. What are some common applications of the PSMN011-60MSX?
    Common applications include power supplies, motor control systems, and renewable energy systems.
  8. Does the PSMN011-60MSX have low on-state resistance?
    Yes, it has low on-state resistance, which helps in reducing power losses.
  9. Is the PSMN011-60MSX available in other package types?
    No, the PSMN011-60MSX is specifically available in the LFPAK33 package.
  10. Where can I find detailed specifications for the PSMN011-60MSX?
    Detailed specifications can be found in the datasheet available on the Nexperia website or through distributors like Digi-Key and Mouser.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:11.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:23 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1368 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):91W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:LFPAK33
Package / Case:SOT-1210, 8-LFPAK33 (5-Lead)
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Similar Products

Part Number PSMN011-60MSX PSMN012-60MSX PSMN011-60MLX
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 61A (Tc) 53A (Ta) 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 11.3mOhm @ 15A, 10V 12mOhm @ 15A, 10V 11.3mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA 4V @ 1mA 2.45V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V 24.8 nC @ 10 V 37.2 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1368 pF @ 30 V 1625 pF @ 25 V 2191 pF @ 30 V
FET Feature - - -
Power Dissipation (Max) 91W (Tc) 75W (Ta) 91W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK33 LFPAK33 LFPAK33
Package / Case SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead) SOT-1210, 8-LFPAK33 (5-Lead)

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