PMZB670UPE,315
  • Share:

Nexperia USA Inc. PMZB670UPE,315

Manufacturer No:
PMZB670UPE,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 680MA DFN1006B-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMZB670UPE,315 is a P-Channel MOSFET produced by Nexperia USA Inc. This component is designed for surface mount applications and features a compact 3-XFDFN (DFN1006B-3) package. It is suitable for various switching applications due to its enhancement mode operation and low on-resistance. The MOSFET has a continuous drain current of 680 mA and a maximum drain-source voltage of 20 V, making it versatile for use in a range of electronic circuits.

Key Specifications

Parameter Value
Manufacturer Nexperia USA Inc.
Package / Case 3-XFDFN (DFN1006B-3)
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material Silicon
Operating Temperature -55°C to 150°C
Power Dissipation (Max) 360 mW (Ta), 2.7 W (Tc)
FET Type P-Channel
Drain to Source Voltage (Vdss) 20 V
Continuous Drain Current (Id) 680 mA
Gate-Source Threshold Voltage (Vgs(th)) 1.3 V @ 250 μA
Drain-Source On Resistance (Rds On) 850 mΩ @ 400 mA, 4.5 V
Gate Charge (Qg) 1.14 nC @ 4.5 V
Turn On Delay Time 18 ns
Turn Off Delay Time 80 ns
Rise Time 30 ns
Fall Time 72 ns
RoHS Status RoHS3 Compliant

Key Features

  • Compact Package: The PMZB670UPE,315 comes in a 3-XFDFN (DFN1006B-3) package, making it ideal for space-constrained designs.
  • Low On-Resistance: With a drain-source on-resistance (Rds On) of 850 mΩ, this MOSFET minimizes power losses in switching applications.
  • Enhancement Mode Operation: Suitable for various switching applications due to its enhancement mode operation.
  • High Current Capability: Supports a continuous drain current of 680 mA, making it suitable for applications requiring moderate to high current handling.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, ensuring reliability in diverse environmental conditions.
  • Fast Switching Times: Features fast turn-on and turn-off delay times, along with low rise and fall times, enhancing the overall switching performance.
  • RoHS Compliance: Compliant with RoHS3, ensuring the component is free from hazardous substances and environmentally friendly.

Applications

The PMZB670UPE,315 is versatile and can be used in a variety of applications, including:

  • Power Management: Suitable for power management circuits, such as voltage regulators, power switches, and battery management systems.
  • Motor Control: Can be used in motor control circuits due to its high current handling and fast switching times.
  • Audio and Video Equipment: Applicable in audio and video equipment for switching and amplification purposes.
  • Automotive Systems: Used in automotive systems for various control and switching functions.
  • Industrial Automation: Suitable for industrial automation applications requiring reliable and efficient switching.

Q & A

  1. Q: What is the package type of the PMZB670UPE,315 MOSFET?

    A: The PMZB670UPE,315 comes in a 3-XFDFN (DFN1006B-3) package.

  2. Q: What is the maximum drain-source voltage (Vdss) of the PMZB670UPE,315?

    A: The maximum drain-source voltage (Vdss) is 20 V.

  3. Q: What is the continuous drain current (Id) of the PMZB670UPE,315?

    A: The continuous drain current (Id) is 680 mA.

  4. Q: What is the gate-source threshold voltage (Vgs(th)) of the PMZB670UPE,315?

    A: The gate-source threshold voltage (Vgs(th)) is 1.3 V @ 250 μA.

  5. Q: Is the PMZB670UPE,315 RoHS compliant?

    A: Yes, the PMZB670UPE,315 is RoHS3 compliant.

  6. Q: What is the operating temperature range of the PMZB670UPE,315?

    A: The operating temperature range is from -55°C to 150°C.

  7. Q: How can I obtain detailed information about the PMZB670UPE,315, such as application notes and datasheets?

    A: You can find detailed information, including datasheets and application notes, on the Nexperia website or through authorized distributors like Ovaga Technologies.

  8. Q: What is the warranty period for the PMZB670UPE,315?

    A: The warranty period varies by supplier, but typically, it is covered by a 1-year warranty against manufacturing defects.

  9. Q: How can I ensure the authenticity of the PMZB670UPE,315 from Nexperia?

    A: Ensure you purchase from authorized distributors who rigorously test and verify the credentials of original Nexperia manufacturers and authorized agents.

  10. Q: What are the typical applications of the PMZB670UPE,315 MOSFET?

    A: The PMZB670UPE,315 is used in power management, motor control, audio and video equipment, automotive systems, and industrial automation.

  11. Q: What is the maximum power dissipation of the PMZB670UPE,315?

    A: The maximum power dissipation is 360 mW (Ta) and 2.7 W (Tc).

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:680mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:850mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:1.14 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:87 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):360mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DFN1006B-3
Package / Case:3-XFDFN
0 Remaining View Similar

In Stock

$0.49
1,777

Please send RFQ , we will respond immediately.

Related Product By Categories

NTNS3193NZT5G
NTNS3193NZT5G
onsemi
MOSFET N-CH 20V 224MA 3XLLGA
FQD2N90TM
FQD2N90TM
onsemi
MOSFET N-CH 900V 1.7A DPAK
STB170NF04
STB170NF04
STMicroelectronics
MOSFET N-CH 40V 80A D2PAK
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
FCD3400N80Z
FCD3400N80Z
onsemi
MOSFET N-CH 800V 2A DPAK
STF28N65M2
STF28N65M2
STMicroelectronics
MOSFET N-CH 650V 20A TO220FP
STF12N120K5
STF12N120K5
STMicroelectronics
MOSFET N-CH 1200V 12A TO220FP
NTHL050N65S3HF
NTHL050N65S3HF
onsemi
MOSFET N-CH 650V 58A TO247-3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
AO3401AL_DELTA
AO3401AL_DELTA
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V SOT23

Related Product By Brand

PESD24VS5UD,115
PESD24VS5UD,115
Nexperia USA Inc.
TVS DIODE 24VWM 52VC 6TSOP
PTVS3V3S1UR,115
PTVS3V3S1UR,115
Nexperia USA Inc.
TVS DIODE 3.3VWM 8VC CFP3
BAT54A,235
BAT54A,235
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 30V SOT23
BAT54QB-QZ
BAT54QB-QZ
Nexperia USA Inc.
BAT54QB-Q/SOT8015/DFN1110D-3
BZX84-C68,235
BZX84-C68,235
Nexperia USA Inc.
DIODE ZENER 68V 250MW TO236AB
BC859CW/ZLF
BC859CW/ZLF
Nexperia USA Inc.
TRANS SOT323
74HCT4851PW,118
74HCT4851PW,118
Nexperia USA Inc.
IC MUX/DEMUX 8CH SELECT 16TSSOP
74HC2G66DP-Q100H
74HC2G66DP-Q100H
Nexperia USA Inc.
IC SWITCH DUAL SPST 8TSSOP
74LV4060PW-Q100J
74LV4060PW-Q100J
Nexperia USA Inc.
IC COUNTER 14STAGE BIN 16TSSOP
74AHCT1G04GW-Q100H
74AHCT1G04GW-Q100H
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 5TSSOP
74HCT221D,112
74HCT221D,112
Nexperia USA Inc.
IC MULTIVIBRATOR 31NS 16SO
74LV4094DB,112
74LV4094DB,112
Nexperia USA Inc.
IC 8ST SHIFT/STORE BUS 16-SSOP