Overview
The PMV48XP/MIR is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is part of Nexperia’s extensive portfolio of discrete semiconductor products and is designed to meet the demands of various electronic applications. The PMV48XP/MIR is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench technology for enhanced performance.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PMV48XP |
| Package | SOT23 (TO-236AB) |
| Channel type | P-channel |
| VDS [max] | -20 V |
| VGS [max] | 12 V |
| RDSon [max] @ VGS = 4.5 V; @25°C | 55 mΩ |
| RDSon [max] @ VGS = 2.5 V | 81 mΩ |
| Tj [max] | 150°C |
| ID [max] | -3.5 A |
| QGD [typ] | 1.8 nC |
| QG(tot) [typ] @ VGS = 4.5 V | 8.5 nC |
| Ptot [max] | 0.51 W |
| VGSth [typ] | -1 V |
| Automotive qualified | No |
| Ciss [typ] | 1000 pF |
| Coss [typ] | 130 pF |
Key Features
- Trench Technology: Enhances performance by reducing on-state resistance and increasing switching speed.
- Low On-State Resistance: RDSon of 55 mΩ at VGS = 4.5 V and 81 mΩ at VGS = 2.5 V, ensuring efficient power handling.
- High Current Capability: Maximum drain current of -3.5 A, suitable for a variety of power applications.
- Compact Package: SOT23 (TO-236AB) package, ideal for space-constrained designs.
- Wide Operating Temperature Range: Maximum junction temperature of 150°C, making it suitable for harsh environments.
Applications
The PMV48XP/MIR is versatile and can be used in various applications across different industries, including:
- Automotive Systems: For power management and control in automotive electronics.
- Industrial Control: In motor control, power supplies, and other industrial automation systems.
- Consumer Electronics: In power management circuits for consumer devices such as laptops, smartphones, and wearables.
- Power Supplies: For efficient switching in DC-DC converters and other power supply units.
Q & A
- What is the maximum drain-source voltage (VDS) of the PMV48XP/MIR?
The maximum drain-source voltage (VDS) is -20 V. - What is the package type of the PMV48XP/MIR?
The PMV48XP/MIR is housed in a SOT23 (TO-236AB) package. - What is the maximum on-state resistance (RDSon) at VGS = 4.5 V?
The maximum on-state resistance (RDSon) at VGS = 4.5 V is 55 mΩ. - What is the maximum drain current (ID) of the PMV48XP/MIR?
The maximum drain current (ID) is -3.5 A. - Is the PMV48XP/MIR automotive qualified?
No, the PMV48XP/MIR is not automotive qualified. - What is the typical gate-source threshold voltage (VGSth)?
The typical gate-source threshold voltage (VGSth) is -1 V. - What are the typical input capacitance (Ciss) and output capacitance (Coss) values?
The typical input capacitance (Ciss) is 1000 pF, and the typical output capacitance (Coss) is 130 pF. - What is the maximum total power dissipation (Ptot)?
The maximum total power dissipation (Ptot) is 0.51 W. - Where can I find the datasheet and other technical documents for the PMV48XP/MIR?
You can find the datasheet and other technical documents on Nexperia’s official website or through authorized distributors. - Is the PMV48XP/MIR still in production?
No, the PMV48XP/MIR is obsolete and no longer manufactured. However, substitutes like the PMV48XP,215 are available.
