PMV40UN2R
  • Share:

Nexperia USA Inc. PMV40UN2R

Manufacturer No:
PMV40UN2R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is optimized for efficiency and performance, making it ideal for space-constrained applications where size and reliability are crucial.

Key Specifications

ParameterValue
Type numberPMV40UN2
Channel typeN
Number of transistors1
VDS [max] (V)30
VGS [max] (V)12
RDSon [max] @ VGS = 4.5 V (mΩ)44
RDSon [max] @ VGS = 2.5 V (mΩ)53
Tj [max] (°C)150
ID [max] (A)4.4
QGD [typ] (nC)1.7
QG(tot) [typ] @ VGS = 4.5 V (nC)7
Ptot [max] (W)0.49
VGSth [typ] (V)0.65
Ciss [typ] (pF)635
Coss [typ] (pF)40

Key Features

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • Enhanced power dissipation capability of 1000 mW
  • Advanced noise reduction techniques
  • Improved signal-to-noise ratio
  • Robust power supply regulation

Applications

  • LED driver
  • Power management
  • Low-side load switch
  • Switching circuits
  • Industrial automation
  • Short circuit protection
  • Automotive electronics
  • Industrial control systems
  • Medical equipment
  • Consumer electronics

Q & A

  1. What is the PMV40UN2R?
    The PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 package, utilizing Trench MOSFET technology.
  2. Who is the manufacturer of the PMV40UN2R?
    The manufacturer is Nexperia USA Inc.
  3. What is the maximum drain-source voltage (VDS) of the PMV40UN2R?
    The maximum drain-source voltage is 30 V.
  4. What is the maximum drain current (ID) of the PMV40UN2R?
    The maximum drain current is 4.4 A.
  5. What are the key features of the PMV40UN2R?
    Key features include Trench MOSFET technology, low threshold voltage, very fast switching, and enhanced power dissipation capability.
  6. In what types of applications is the PMV40UN2R commonly used?
    Common applications include LED drivers, power management, low-side load switches, switching circuits, industrial automation, and automotive electronics.
  7. What is the package type of the PMV40UN2R?
    The package type is SOT23 (TO-236AB).
  8. What is the maximum junction temperature (Tj) of the PMV40UN2R?
    The maximum junction temperature is 150°C.
  9. Is the PMV40UN2R automotive qualified?
    No, the PMV40UN2R is not automotive qualified.
  10. What are the typical gate-source threshold voltage (VGSth) and input capacitance (Ciss) of the PMV40UN2R?
    The typical gate-source threshold voltage is 0.65 V, and the typical input capacitance is 635 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:44mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:635 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):490mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
0 Remaining View Similar

In Stock

$0.51
430

Please send RFQ , we will respond immediately.

Similar Products

Part Number PMV40UN2R PMV30UN2R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 44mOhm @ 3.7A, 4.5V 32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 15 V 655 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 490mW (Ta) 490mW (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

Related Product By Categories

PSMN3R0-60PS,127
PSMN3R0-60PS,127
Nexperia USA Inc.
MOSFET N-CH 60V 100A TO220AB
STP13NK60Z
STP13NK60Z
STMicroelectronics
MOSFET N-CH 600V 13A TO220AB
AO4407A
AO4407A
Alpha & Omega Semiconductor Inc.
MOSFET P-CH 30V 12A 8SOIC
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NTD2955T4G
NTD2955T4G
onsemi
MOSFET P-CH 60V 12A DPAK
FDBL86361-F085
FDBL86361-F085
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STD4NK60ZT4
STD4NK60ZT4
STMicroelectronics
MOSFET N-CH 600V 4A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
2N7002H-13
2N7002H-13
Diodes Incorporated
MOSFET N-CH 60V 170MA SOT23
PMPB15XP
PMPB15XP
Nexperia USA Inc.
PMPB15XP - 12 V, SINGLE P-CHANNE
NTD20N06LT4
NTD20N06LT4
onsemi
MOSFET N-CH 60V 20A DPAK
2N7002TC
2N7002TC
Diodes Incorporated
MOSFET N-CH 60V 115MA SOT23-3

Related Product By Brand

BZA462A,125
BZA462A,125
Nexperia USA Inc.
TVS DIODE 6.2VWM 9VC 6TSOP
BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BAS21J/ZLF
BAS21J/ZLF
Nexperia USA Inc.
DIODE GEN PURP 300V 250MA SC90
BZX384-C75,115
BZX384-C75,115
Nexperia USA Inc.
DIODE ZENER 75V 300MW SOD323
BCP56-10TX
BCP56-10TX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC869,115
BC869,115
Nexperia USA Inc.
TRANS PNP 20V 1A SOT89
BC857-QR
BC857-QR
Nexperia USA Inc.
TRANS PNP 45V 0.1A TO236AB
74HC244D,652
74HC244D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 20SO
74LVC1G126GW-Q100H
74LVC1G126GW-Q100H
Nexperia USA Inc.
IC BUF NON-INVERT 5.5V 5TSSOP
74AUP1G04GM,132
74AUP1G04GM,132
Nexperia USA Inc.
IC INVERTER 1CH 1-INP 6XSON
74HC165D-Q100,118
74HC165D-Q100,118
Nexperia USA Inc.
IC SHIFT REGISTER 8BIT 16SOIC