PMV40UN2R
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Nexperia USA Inc. PMV40UN2R

Manufacturer No:
PMV40UN2R
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 3.7A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This transistor is designed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, utilizing Trench MOSFET technology. It is optimized for efficiency and performance, making it ideal for space-constrained applications where size and reliability are crucial.

Key Specifications

ParameterValue
Type numberPMV40UN2
Channel typeN
Number of transistors1
VDS [max] (V)30
VGS [max] (V)12
RDSon [max] @ VGS = 4.5 V (mΩ)44
RDSon [max] @ VGS = 2.5 V (mΩ)53
Tj [max] (°C)150
ID [max] (A)4.4
QGD [typ] (nC)1.7
QG(tot) [typ] @ VGS = 4.5 V (nC)7
Ptot [max] (W)0.49
VGSth [typ] (V)0.65
Ciss [typ] (pF)635
Coss [typ] (pF)40

Key Features

  • Trench MOSFET technology
  • Low threshold voltage
  • Very fast switching
  • Enhanced power dissipation capability of 1000 mW
  • Advanced noise reduction techniques
  • Improved signal-to-noise ratio
  • Robust power supply regulation

Applications

  • LED driver
  • Power management
  • Low-side load switch
  • Switching circuits
  • Industrial automation
  • Short circuit protection
  • Automotive electronics
  • Industrial control systems
  • Medical equipment
  • Consumer electronics

Q & A

  1. What is the PMV40UN2R?
    The PMV40UN2R is an N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 package, utilizing Trench MOSFET technology.
  2. Who is the manufacturer of the PMV40UN2R?
    The manufacturer is Nexperia USA Inc.
  3. What is the maximum drain-source voltage (VDS) of the PMV40UN2R?
    The maximum drain-source voltage is 30 V.
  4. What is the maximum drain current (ID) of the PMV40UN2R?
    The maximum drain current is 4.4 A.
  5. What are the key features of the PMV40UN2R?
    Key features include Trench MOSFET technology, low threshold voltage, very fast switching, and enhanced power dissipation capability.
  6. In what types of applications is the PMV40UN2R commonly used?
    Common applications include LED drivers, power management, low-side load switches, switching circuits, industrial automation, and automotive electronics.
  7. What is the package type of the PMV40UN2R?
    The package type is SOT23 (TO-236AB).
  8. What is the maximum junction temperature (Tj) of the PMV40UN2R?
    The maximum junction temperature is 150°C.
  9. Is the PMV40UN2R automotive qualified?
    No, the PMV40UN2R is not automotive qualified.
  10. What are the typical gate-source threshold voltage (VGSth) and input capacitance (Ciss) of the PMV40UN2R?
    The typical gate-source threshold voltage is 0.65 V, and the typical input capacitance is 635 pF.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:44mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:12 nC @ 4.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:635 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):490mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-236AB
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number PMV40UN2R PMV30UN2R
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 3.7A (Ta) 4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.2V, 4.5V
Rds On (Max) @ Id, Vgs 44mOhm @ 3.7A, 4.5V 32mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 4.5 V 11 nC @ 4.5 V
Vgs (Max) ±12V ±12V
Input Capacitance (Ciss) (Max) @ Vds 635 pF @ 15 V 655 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 490mW (Ta) 490mW (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-236AB TO-236AB
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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