Overview
The PMCM4401VNEAZ is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET utilizes Trench MOSFET technology and is packaged in a 4-bump Wafer Level Chip-Size Package (WLCSP). The device is known for its ultra-small size, measuring 0.78 × 0.78 × 0.35 mm, making it ideal for space-constrained applications. It features a low threshold voltage and high electrostatic discharge (ESD) protection, exceeding 2 kV HBM. This component is designed to support a wide range of applications, including relay drivers, high-speed line drivers, and low-side load switches.
Key Specifications
| Parameter | Value |
|---|---|
| Type number | PMCM4401VNE |
| Package | WLCSP4 |
| Channel type | N-channel |
| Number of transistors | 1 |
| VDS [max] (V) | 12 |
| VGS [max] (V) | 8 |
| RDSon [max] @ VGS = 4.5 V; @25°C (mΩ) | 42 |
| RDSon [max] @ VGS = 2.5 V (mΩ) | 54 |
| VESD (kV) | > 2 |
| Tj [max] (°C) | 150 |
| ID [max] (A) | 6 |
| QGD [typ] (nC) | 1.8 |
| QG(tot) [typ] @ VGS = 4.5 V (nC) | 6 |
| Ptot [max] (W) | 0.4 |
| VGSth [typ] (V) | 0.6 |
| Ciss [typ] (pF) | 335 |
| Coss [typ] (pF) | 130 |
Key Features
- Ultra-small package: 0.78 × 0.78 × 0.35 mm, ideal for space-constrained applications.
- Low threshold voltage.
- Trench MOSFET technology for enhanced performance.
- High electrostatic discharge (ESD) protection > 2 kV HBM.
- High current handling capability with ID [max] of 6 A.
- Low on-resistance (RDSon) for efficient switching.
Applications
- Relay drivers.
- High-speed line drivers.
- Low-side load switches.
- Switching circuits.
- General-purpose switching applications in automotive, industrial, and consumer electronics.
Q & A
- What is the PMCM4401VNEAZ? The PMCM4401VNEAZ is an N-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc.
- What package type does the PMCM4401VNEAZ use? It uses a 4-bump Wafer Level Chip-Size Package (WLCSP).
- What are the key features of the PMCM4401VNEAZ? It features a low threshold voltage, ultra-small package, Trench MOSFET technology, and high ESD protection.
- What is the maximum drain-source voltage (VDS) for the PMCM4401VNEAZ? The maximum VDS is 12 V.
- What is the maximum drain current (ID) for the PMCM4401VNEAZ? The maximum ID is 6 A.
- What are some common applications for the PMCM4401VNEAZ? It is used in relay drivers, high-speed line drivers, low-side load switches, and general-purpose switching circuits.
- Does the PMCM4401VNEAZ have ESD protection? Yes, it has ESD protection exceeding 2 kV HBM.
- What is the typical threshold voltage (VGSth) for the PMCM4401VNEAZ? The typical VGSth is 0.6 V.
- What is the maximum junction temperature (Tj) for the PMCM4401VNEAZ? The maximum Tj is 150°C.
- Where can I find more detailed specifications for the PMCM4401VNEAZ? Detailed specifications can be found in the datasheet available on Nexperia's official website or through distributors like Mouser and Win Source.
