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PH7030AL,115
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Nexperia USA Inc. PH7030AL,115

Manufacturer No:
PH7030AL,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 76A LFPAK56
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PH7030AL,115 is a high-performance N-channel MOSFET produced by Nexperia USA Inc. This device is part of Nexperia's LFPAK56 package series, known for its compact size and high power density. The PH7030AL,115 is designed to offer excellent electrical and thermal performance, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)76 A
RDS(on) (On-State Drain-Source Resistance)Typically 1.5 mΩ
VGS(th) (Gate-Source Threshold Voltage)Typically 2.5 V
PD (Power Dissipation)Dependent on package and thermal conditions
PackageLFPAK56
ManufacturerNexperia USA Inc.

Key Features

  • High current handling capability of up to 76 A.
  • Low on-state resistance (RDS(on)) of typically 1.5 mΩ.
  • Compact LFPAK56 package for high power density and reduced PCB space.
  • High thermal performance and reliability.
  • Suitable for high-frequency switching applications.

Applications

  • Power management in automotive systems, including electric vehicles and hybrid vehicles.
  • Industrial power supplies and motor drives.
  • Renewable energy systems, such as solar and wind power.
  • High-power switching applications in consumer electronics and industrial equipment.

Q & A

  1. What is the maximum drain-source voltage of the PH7030AL,115?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of this MOSFET?
    The continuous drain current (ID) is 76 A.
  3. What is the typical on-state drain-source resistance?
    The typical on-state drain-source resistance (RDS(on)) is 1.5 mΩ.
  4. What package type is used for the PH7030AL,115?
    The package type is LFPAK56.
  5. Who is the manufacturer of the PH7030AL,115?
    The manufacturer is Nexperia USA Inc.
  6. What are some common applications for this MOSFET?
    Common applications include power management in automotive systems, industrial power supplies, renewable energy systems, and high-power switching in consumer electronics.
  7. What is the significance of the LFPAK56 package?
    The LFPAK56 package is known for its compact size and high power density, making it ideal for applications where space is limited.
  8. How does the PH7030AL,115 handle thermal performance?
    The device is designed to offer high thermal performance and reliability, making it suitable for demanding applications.
  9. Is the PH7030AL,115 suitable for high-frequency switching?
    Yes, it is suitable for high-frequency switching applications due to its low on-state resistance and high current handling capability.
  10. Where can I find detailed technical specifications and datasheets for the PH7030AL,115?
    Detailed technical specifications and datasheets can be found on Nexperia's official website or through authorized distributors like Digi-Key and Mouser Electronics.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:76A (Tc)
Drive Voltage (Max Rds On, Min Rds On):- 
Rds On (Max) @ Id, Vgs:7mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):- 
Input Capacitance (Ciss) (Max) @ Vds:1270 pF @ 12 V
FET Feature:- 
Power Dissipation (Max):- 
Operating Temperature:- 
Mounting Type:Surface Mount
Supplier Device Package:LFPAK56, Power-SO8
Package / Case:SC-100, SOT-669
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Similar Products

Part Number PH7030AL,115 PH9030AL,115 PH7030L,115 PH2030AL,115 PH3030AL,115 PH4030AL,115 PH5030AL,115 PH6030AL,115
Manufacturer Nexperia USA Inc. NXP USA Inc. NXP USA Inc. NXP USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete Obsolete Obsolete Active Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 76A (Tc) 61A (Tc) 68A (Tc) - 100A (Tc) 100A (Tc) 91A (Tc) 79A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - - 4.5V, 10V - - - - -
Rds On (Max) @ Id, Vgs 7mOhm @ 15A, 10V 8mOhm @ 15A, 10V 7.9mOhm @ 10A, 10V - 3mOhm @ 15A, 10V 4mOhm @ 15A, 10V 5mOhm @ 15A, 10V 6mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA 2V @ 1mA - 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V 17.8 nC @ 10 V 12 nC @ 5 V - 45.8 nC @ 10 V 36.6 nC @ 10 V 29 nC @ 10 V 24 nC @ 10 V
Vgs (Max) - - ±20V - - - - -
Input Capacitance (Ciss) (Max) @ Vds 1270 pF @ 12 V 1006 pF @ 12 V 1362 pF @ 10 V - 2822 pF @ 12 V 2090 pF @ 12 V 1760 pF @ 12 V 1425 pF @ 12 V
FET Feature - - - - - - - -
Power Dissipation (Max) - - 62.5W (Tc) - - - - -
Operating Temperature - - -55°C ~ 150°C (TJ) - - - - -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8 LFPAK56, Power-SO8
Package / Case SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669 SC-100, SOT-669

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