Overview
The PBSS4350T,215 is an NPN low VCEsat transistor produced by Nexperia USA Inc. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. It is designed to offer high performance and efficiency in various electronic applications. The PNP complement of this transistor is the PBSS5350T.
Key Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | Open base | - | - | 50 | V |
| Collector Current (DC) | IC | - | - | - | 2 | A |
| Repetitive Peak Collector Current | ICRP | Pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25 | - | - | 3 | A |
| Equivalent On-Resistance | RCEsat | - | - | - | 130 | mΩ |
| DC Current Gain | hFE | IC = 100 mA; VCE = 2 V | 300 | - | - | - |
| Total Power Dissipation | Ptot | Tamb ≤ 25 °C; note 2 | - | - | 300 | mW |
| Storage Temperature | Tstg | - | -65 | - | 150 | °C |
| Junction Temperature | Tj | - | - | - | 150 | °C |
| Frequency | fT | - | 100 | - | - | MHz |
Key Features
- Low collector-emitter saturation voltage VCEsat and corresponding low RCEsat
- High collector current capability up to 3 A
- High collector current gain (hFE) of 300
- Improved efficiency due to reduced heat generation
- Compact SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package
Applications
- Power management applications
- Low and medium power DC/DC converters
- Supply line switching
- Battery chargers
- Linear voltage regulation with low voltage drop-out (LDO)
Q & A
- What is the collector-emitter voltage rating of the PBSS4350T transistor?
The collector-emitter voltage rating is 50 V.
- What is the maximum collector current for the PBSS4350T transistor?
The maximum collector current is 2 A, with a repetitive peak collector current of 3 A.
- What is the package type of the PBSS4350T transistor?
The transistor is housed in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
- What are the key features of the PBSS4350T transistor?
The key features include low VCEsat, high collector current capability, high collector current gain, and improved efficiency due to reduced heat generation.
- What are some common applications of the PBSS4350T transistor?
Common applications include power management, low and medium power DC/DC converters, supply line switching, battery chargers, and linear voltage regulation with low voltage drop-out (LDO).
- What is the PNP complement of the PBSS4350T transistor?
The PNP complement is the PBSS5350T transistor.
- What is the maximum junction temperature for the PBSS4350T transistor?
The maximum junction temperature is 150 °C.
- What is the frequency rating of the PBSS4350T transistor?
The frequency rating is 100 MHz.
- How does the PBSS4350T transistor improve efficiency?
The transistor improves efficiency due to its low VCEsat and corresponding low RCEsat, which reduce heat generation.
- What is the total power dissipation of the PBSS4350T transistor?
The total power dissipation is 300 mW at Tamb ≤ 25 °C.
