PBSS4350TVL
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Nexperia USA Inc. PBSS4350TVL

Manufacturer No:
PBSS4350TVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN 50V 2A TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS4350TVL is a 50 V, 3 A NPN low VCEsat transistor manufactured by Nexperia USA Inc. This transistor is housed in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of applications where space is limited. The PNP complement of this transistor is the PBSS5350T.

Nexperia, a global semiconductor company, is known for its extensive portfolio of diodes, bipolar transistors, ESD protection devices, MOSFETs, GaN FETs, IGBTs, and analog & logic ICs. The PBSS4350TVL is part of this portfolio, designed to meet the demands of modern electronic designs across various industries, including automotive, industrial, power, computing, consumer, mobile, and wearables.

Key Specifications

Parameter Value Unit
Type number PBSS4350TVL -
Package SOT23 -
Channel type NPN -
VCEO [max] 50 V
IC [max] 2000 mA
hFE [min] 300 -
TJ [max] 150 °C
fT [min] 100 MHz
Ptot 300.0 mW
Automotive qualified No -

Key Features

  • Low Collector-Emitter Saturation Voltage (VCEsat): Ensures low power losses and high efficiency.
  • High Collector Current Capability: Supports up to 3 A of collector current.
  • High Collector Current Gain (hFE): Minimum gain of 300, ensuring reliable operation.
  • Improved Efficiency: Reduced heat generation due to low VCEsat and corresponding low RCEsat.
  • Compact SOT23 Package: Suitable for space-constrained designs with dimensions of 2.9 x 1.3 x 1 mm.

Applications

  • Power Management: Ideal for low and medium power DC/DC converters, supply line switching, and battery chargers.
  • Linear Voltage Regulation: Suitable for linear voltage regulation with low voltage drop-out (LDO).
  • Automotive and Industrial: Although not automotive qualified, it can be used in various industrial and consumer applications where high efficiency and reliability are crucial.

Q & A

  1. What is the maximum collector-emitter voltage (VCEO) of the PBSS4350TVL?

    The maximum collector-emitter voltage (VCEO) is 50 V.

  2. What is the maximum collector current (IC) of the PBSS4350TVL?

    The maximum collector current (IC) is 2000 mA.

  3. What is the minimum current gain (hFE) of the PBSS4350TVL?

    The minimum current gain (hFE) is 300.

  4. What is the maximum junction temperature (TJ) of the PBSS4350TVL?

    The maximum junction temperature (TJ) is 150 °C.

  5. Is the PBSS4350TVL automotive qualified?

    No, the PBSS4350TVL is not automotive qualified.

  6. What package type is the PBSS4350TVL available in?

    The PBSS4350TVL is available in the SOT23 (TO-236AB) package.

  7. What are the dimensions of the SOT23 package?

    The dimensions of the SOT23 package are 2.9 x 1.3 x 1 mm.

  8. What are some typical applications of the PBSS4350TVL?

    Typical applications include power management, linear voltage regulation, and various industrial and consumer applications.

  9. What is the PNP complement of the PBSS4350TVL?

    The PNP complement of the PBSS4350TVL is the PBSS5350T.

  10. How does the low VCEsat benefit the performance of the PBSS4350TVL?

    The low VCEsat reduces power losses and heat generation, improving overall efficiency.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:370mV @ 300mA, 3A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:300 @ 1A, 2V
Power - Max:- 
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Same Series
PBSS4350T,215
PBSS4350T,215
TRANS NPN 50V 2A TO236AB

Similar Products

Part Number PBSS4350TVL PBSS5350TVL PBSS4320TVL
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN PNP NPN
Current - Collector (Ic) (Max) 2 A 2 A 2 A
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 20 V
Vce Saturation (Max) @ Ib, Ic 370mV @ 300mA, 3A 390mV @ 300mA, 3A 310mV @ 300mA, 3A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A, 2V 200 @ 1A, 2V 220 @ 1A, 2V
Power - Max - - -
Frequency - Transition 100MHz 100MHz 100MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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